• 한국태양에너지학회:학술대회논문집
• /
• 2011.04a
• /
• pp.269-274
• /
• 2011

A solar cell is primary parts to produce electrical energy from the Sun. And, we can utilize those solar cells as a power generation system in home, factory, and so on. In order to make proper power, the solar cells are configured in series and parallel lay down. In condition of uniform illumination, the solar array will produce an enough power by photovoltaic effects from the solar cells. In case of non-uniform illumination on the solar cells, the power will be dramatically decreased compared to design. Fortunately, there were so many research outputs regarding the illumination effects on solar array. In this work, we tried to find out the non-uniform effects on unit CPV solar cell, because there were no research outputs for unit CPV solar cell considering illumination. The CPV solar cell was used in CPV system to make a power by the Sun. We chosen the triple junction solar cell of GaAsInP2Ge for simulation, which has a 30 % of conversion efficiency. By simulation, we obtained the output performance of CPV solar cells in condition of various illumination by using Hamming Window function. Its performance was degraded by 10 % to 50 % depending illumination conditions.

• Current Photovoltaic Research
• /
• v.2 no.3
• /
• pp.95-102
• /
• 2014

Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.62.2-62.2
• /
• 2010

박막 실리콘 태양 전지는 저가격화 및 대량생산, 대면적화에 유리하다는 장점을 가지고 있다. 단점으로 지적되는 낮은 효율을 극복하기 위해 광흡수층의 밴드갭이 서로 다른 두 개 이상의 박막을 적층하여, 넓은 파장 대역의 빛을 효과적으로 흡수함으로써 광변환 효율을 올리기 위한 많은 연구가 이루어지고 있다. 서로 다른 밴드갭의 광흡수층을 가진 p-i-n 구조를 다중 적층하여 고효율의 태양 전지를 제작하기 위해서는 n-도핑층과, p-도핑층 간에 전자와 정공이 빠르게 재결합할 수 있는 터널 접합(Tunnel Recombination Junction)의 형성이 필수적이며, 이때 광손실이 최소화되도록 해야한다. 만약 터널 접합이 적절하게 형성되지 않으면 결합되지 않은 전자와 정공이 도핑층 사이에 쌓이게 되고, 도핑층 사이의 저항 증가로 태양 전지의 광변환 효율은 크게 하락한다. 이번 연구에서는 터널 접합이 잘 이루어지게 하기 위한 n-도핑층 및 p-도핑층 박막의 특성과, 터널 접합의 특성에 따른 적층형 태양 전지의 광효율 변화를 확인하였다. 광흡수층 및 도핑층은 TCO($SnO_2:F$, Asahi) 유리 기판 위에 PECVD를 사용하여 p-i-n 구조로 RF Power 조건에서 증착되었고, ${\mu}c$-Si 광흡수층의 경우에는 VHF Power 조건에서 증착되었다. 광흡수층이 a-Si/${\mu}c$-Si의 구조를 가지는 이중 접합 태양 전지에서 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층 사이의 터널 접합 실험 결과 n-도핑층 및 p-도핑층의 결정화도와 도핑 농도를 조절하여 터널 접합의 저항을 최소화했고, 터널 접합 특성이 이중 접합 셀의 광효율 특성과 유사한 경향을 보임을 확인하였다. 광흡수층이 a-Si/a-SiGe/${\mu}c$-Si의 구조를 가지는 삼중 접합 태양 전지 실험의 경우 a-Si과 a-SiGe 광흡수층 사이에 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층/a-SiC p-도핑층의 구조를 적용하여 터널 접합을 형성하였으며, ${\mu}c$-Si p-도핑층의 두께 및 박막 특성을 개선하여 광손실이 최소화된 터널 접합을 구현하였고, 삼중 접합 태양 전지에 적용되었다.

• Proceedings of the KSEG Conference
• /
• 2005.04a
• /
• pp.101-106
• /
• 2005

The three-dimensional Tomography developed by Kim and Bae(2004) was applied to 64,024 P and 64,618 S wave arrival times observed at 238 seismic stations for 4050 local earthquakes in the depth range from 0 to 300 km in and around Hokkaido, Japan. High and low velocity zones for Vp/Vs were clearly imaged in and around Hokkaido. The upper seismic planes of the double seismic zone (DSZ) were found in the subducted Pacific Plate beneath Hokkaido at depth of 40- 80 km, which produced high seismicity around Hokkaido. The findings of high Vp/Vs anomalies beneath the Moho discontinuity supports an evidence of a surface triple-collision hypothesis prepared by Moriya(1994) that the Kuril Arc(Okhotsk Plate or North American Plate) is colliding against the NE Japanese Arc(Amurian Plate or Eurasian Plate), along and beneath the Hidaka Mountain Range, and at the same time the Pacific Plate is subducting into these two plates, making an equilibrium of tectonic forces along the Hikada Mountain Range (HMR) corner and the central tectonic axis(142 ~ 143E) in Hokkaido. The low Vp and Vs were also found in east and west along the central tectonic axis in which the focal mechanism represents the extensional forces. These phenomena are also consistent with low Bouguer gravity anomalies in this region. It is understood why most of great earthquakes occurred outside Hokkaido where the balance of tectonic forces are breaking from the triple junction of three tectonic forces in Hokkaido.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.320-320
• /
• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.400-400
• /
• 2009

In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for atmospheric conditions with modem diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in atmosphere. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in atmosphere generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, air). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of epoxy.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1681-1683
• /
• 1998

Unlike AC, DC dielectric characteristics of the spacer are very influenced by the quantity and the distribution of surface charges. A general impression of the distribution of surface charges is obtained if electrostatic powders are sprinkled over the surface. The distribution of surface charge was investigated with dust figures. Mechanism of charge accumulation on the spacer of $SF_6$ GIS has been studied using various types of model spacers which have different depths. As a result, it was found that charge accumulation was dominantly influenced by the normal component of the electric field and the usage of embedded electrodes was an adequate method to lessen field concentration around the triple junction. The guide of the optimum depth of the spacer was proposed.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1471_1472
• /
• 2009

In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for vacuum conditions with modern diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in vacuum. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in vacuum generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, vacuum). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of insulator at results, surface flashover influenced only insulator surface condition. and increasing vacuum pressure was risen breakdown voltage.

• Journal of Powder Materials
• /
• v.6 no.4
• /
• pp.277-285
• /
• 1999

Mechanical properties of nanocrystalline Al-5at.%Ti alloy were investigated through high temperature compression test. Al-5at.%Ti nanocrystalline metal powders, which had finer and more equiaxed shape than those produced at room temperature, were produced by mechanical alloying at low temperature. The powders were successfully consolidated to 99fo of theoretical density by vacuum hot pressing. XRD and TEM analysis revealed that $Al_3Ti$ intermetallic compounds formed inside powders and pure Al region with coarse grains formed between powders, especially at triple junction. Mechanical properties in terms of hardness and strength were improved by grain size refinement, but ductility decreased presumably due to the formation of the weak interfaces between Al pool and powders.

• Journal of Magnetics
• /
• v.1 no.2
• /
• pp.82-85
• /
• 1996

Magnetic properties and microstructures of melt spun misch metal-ferroboron alloys were investigated. The major phase is the tetragonal (rare earth)$_2Fe_{14}B$ phase. Magnetic properties showed coercivity of 5.6 kOe, remanence of 7.85 kG, and so energy product 8.9 MGOe. Microsturctures in optimum properties showed that matrix was composed of Ce-rich phase while second phase La-rich-oxygen phase with less amount of Fe element than matrix, and triple junction with La-rich phase contrary to matrix.