• Title/Summary/Keyword: trenches

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Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate (나노패턴된 기판 위에서의 그래핀의 비등방성 전자 수송 특성)

  • Khalil, H.M.W.;Kelekci, O.;Noh, H.;Xie, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.279-285
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    • 2012
  • We report on the measurements of electronic transport properties of CVD graphene placed on a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between the transport parallel and perpendicular to the trenches. Characteristically different weak localization corrections have been also observed when the transport was perpendicular to the trench, which is interpreted as due to a density inhomogeneity generated by the potential modulations.

Experimental Study of Runoff Induced by Infiltration Trench (침투 트렌치로 인한 유출 양상의 실험 연구)

  • Lee, Sangho;Cho, Heeho;Lee, Jungmin;Park, Jaehyun
    • Journal of Korean Society on Water Environment
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    • v.24 no.1
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    • pp.107-117
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    • 2008
  • Infiltration facilities are effective instruments to mitigate flood and can increase base runoff in urban watersheds. In order to analyze effects of infiltration trenches physical model experiments were conducted. The physical model facility consists of two soil tanks, artificial rainfall generators, tensiometers, and piezometers. The experiment was conducted by nine times and each case differed in rainfall intensity, rainfall duration and the type of ground surface. Measured quantities in the experiments are as follows: surface runoff, subsurface runoff, trench pipe runoff, groundwater level, water content, etc. The following resulted from the model experiment: The volume of subsurface runoff at trench watershed was maximum 78.3% compared with rainfall. This value is bigger than that of ordinary rate of subsurface runoff, and shows a groundwater recharge effect of trench. The time of runoff passing through the trench became earlier and the volume of runoff became larger with the increase of inflow into the trench, while trench exfiltration into ground became relatively smaller. The results of this study presented above show that infiltration trenches are effective instruments to increase base runoff during dry periods.

Effects of Post Annealing and Oxidation Processes on the Shallow Trench Etch Process (Shallow Trench 식각공정시 발생하는 결함의 후속열처리 및 산화곤정에 따른 거동에 관한 연구)

  • 이영준;황원순;김현수;이주옥;이정용;염근영
    • Journal of the Korean institute of surface engineering
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    • v.31 no.5
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    • pp.237-244
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    • 1998
  • In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

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Decision Support System for Determination of Types and Locations of Low Impact Development Practices

  • Abdulai, Patricia Jitta;Song, Jae Yeol;Chung, Eun-Sung
    • Proceedings of the Korea Water Resources Association Conference
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    • 2017.05a
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    • pp.181-181
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    • 2017
  • Low impact development (LID) practices has become important to mitigate the damage from natural disasters in urban areas. Thereby many hydrological simulation models can simulate the hydrological impact of LID practices. However, commonly used models are not able to provide specific information to most users such as where LIDs should be placed and what kind of LID should be designed. In this study, a decision support system which can be used with the EPA's SWMM was developed for the determination of LID types and locations of LID practices, named Water Management Prioritization Module (WMPM), was applied to a urbanized university campus. Eight sub-catchments were selected as feasible candidate areas for the planning of LID practices. Pre-designated infiltration trenches and permeable pavements were applied to each selected sub-catchments, followed by peak and total runoffs comparison between before/after planning of LIDs. Moreover, TOPSIS, one of a multi-criteria decision analysis method was used in the procedure of selecting target sub-catchment areas and final prioritization of LID types and locations. As a result, sub-catchments S4 with permeable pavements and S16 with infiltration trenches has shown the most decrease in total and peak runoffs, respectively. Therefore, WMPM was found to be effective in determining the best alternative among various scenarios generated and simulated.

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Cost-Effectiveness Analysis of Low-Impact Development Facilities to Improve Hydrologic Cycle and Water Quality in Urban Watershed (도시유역의 물순환 및 수질 개선을 위한 저영향개발 시설의 비용 효율 분석)

  • Choi, Jeonghyeon;Kim, Kyungmin;Sim, Inkyeong;Lee, Okjeong;Kim, Sangdan
    • Journal of Korean Society on Water Environment
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    • v.36 no.3
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    • pp.206-219
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    • 2020
  • As urbanization and impermeable areas have increased, stormwater and non-point pollutants entering the stream have increased. Additionally, in the case of the old town comprising a combined sewer pipe system, there is a problem of stream water pollution caused by the combined sewer overflow. To resolve this problem, many cities globally are pursuing an environmentally friendly low impact development strategy that can infiltrate, evaporate, and store rainwater. This study analyzed the expected effects and efficiency when the LID facility was installed as a measure to improve hydrologic cycle and water quality in the Oncheon stream in Busan. The EPA-SWMM, previously calibrated for hydrological and water quality parameters, was used, and standard parameters of the LID facilities supported by the EPA-SWMM were set. Benchmarking the green infrastructure plan in New York City, USA, has created various installation scenarios for the LID facilities in the Oncheon stream drainage area. The installation and maintenance cost of the LID facility for scenarios were estimated, and the effect of each LID facility was analyzed through a long-term EPA-SWMM simulation. Among the applied LID facilities, the infiltration trench showed the best effect, and the bio-retention cell and permeable pavement system followed. Conversely, in terms of cost-efficiency, the permeable pavement systems showed the best efficiency, followed by the infiltration trenches and bio-retention cells.

A study on the silicon shallow trench etch process for STI using inductively coupled $Cl_2$ and TEX>$HBr/Cl_2$ plasmas (유도결합 $Cl_2$$HBr/Cl_2$ 플라즈마를 이용한 STI용 실리콘 Shallow trench 식각공정에 관한 연구)

  • 이주훈;이영준;김현수;이주욱;이정용;염근영
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.267-274
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    • 1997
  • Silicon shallow trenches applied to the STI (Shallow Trench Isolation) of integrated circuits were etched using inductively coupled $Cl_2$ and HBr/$Cl_2$ plasmas and the effects of process parameters on the etch profiles of silicon trenches and the physical damages on the trench sidewall and bottom were investigated. The increase of inductive power and bias voltage in $Cl_2$ and HBr/$Cl_2$ plasmas increased polysilicon etch rates in general, but reduced the etch selectivities over nitride. In case of $Cl_2$ plasma, low inductive power and high bias voltage showed an anisotropic trench etch profile, and also the addition of oxygen or nitrogen to chlorine increased the etch anisotropy. The use of pure HBr showed a positively angled etch profile and the addition of $Cl_2$ to HBr improved the etch profile more anisotropically. HRTEM study showed physical defects formed on the silicon trench surfaces etched in $Cl_2/N_2$ or HBr/ $Cl_2$ plasmas.

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Influence of Materials and Embedded Depth of Isolation Barrier on Ground Vibration - With Point Loaded Centrifugal Tests - (진동 차단벽재료 및 타설심도가 방진효과에 미치는 영향 - 점가진 원심모형실험을 중심으로 -)

  • 이강일;김태훈
    • Journal of the Korean Geotechnical Society
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    • v.20 no.6
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    • pp.41-49
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    • 2004
  • In general, open trenches or in-filled trenches have been used to isolate transmitting of vibration. Recently alternative methods, in which various materials are used for wall barriers have been proposed and performed in several sites. Although the effects of these methods are verified, resonable and qualitative evaluation methods have not yet been conducted. It may be because many factors, such as the characteristics of vibration sources, ground condition, and parameters of wall barrier are coupled complicatedly. In this study, a series of centrifugal modelings were conducted in order to examine the evaluation method of a vibration wall barrier when point load transmits to the surface. The experiments were performed with different stiffness of wall barriers and different depths of installations. Using the results obtained from tests, effects of those variables on the efficiency of vibration barrier were analyzed. Through this investigation we observed vibration transmission of under ground, and verified the applicability of ball dropping system which was developed in this study.

Effect of Plasma Pretreatment on Superconformal Cu Alloy Gap-Filling of Nano-scale Trenches

  • Mun, Hak-Gi;Lee, Jeong-Hun;Lee, Su-Jin;Yun, Jae-Hong;Kim, Hyeong-Jun;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.53-53
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    • 2011
  • As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

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