• 제목/요약/키워드: trapping region

검색결과 50건 처리시간 0.031초

Cytochemical Evidence on Seasonal Variation of Peroxidase Activities in Cambial Region of Pinus densiflora, Ginkgo biloba, and Populus alba

  • Wi, Seung-Gon;Lee, Kwang-Ho;Kim, Yoon-Soo
    • Journal of the Korean Wood Science and Technology
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    • 제28권4호
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    • pp.17-24
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    • 2000
  • The peroxidase activity was localized cytochemically to get an insight into its precise function in lignin biosynthesis. In this work, cerium chloride ($CeCl_3$) was used as a trapping agent for hydrogen peroxide ($H_2O_2$) generated from peroxidase. Seasonal variation of peroxidase activities in cambial region of Populus, Pinus, and Ginkgo was investigated at subcellular levels. Under transmission electron microscopy, electron dense deposits of cerium perhydroxide formed by reaction with $H_2O_2$ were observed in cambium and its immediate derivatives. The staining with $CeCl_3$ in cambium varied with growth seasons. The strongest $H_2O_2$ accumulation, regardless of tree species, appeared in May. Staining pattern of $CeCl_3$ in the cambium of poplar indicated that the production of peroxidase started in March before the opening of buds and reached the highest in May and then declined in August. Ginkgo and Pinus showed relatively late generation of $H_2O_2$ production when compared with Populus. Although Ginkgo and Pinus are classified into gymnosperms, however, the generation of peroxidase production and its duration was different from each other. Little staining appeared in all the tree samples collected in September before falling the leaves.

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High aspect ratio Zinc Oxide nanorods for amorphous silicon thin film solar cells

  • Kim, Yongjun;Kang, Junyoung;Jeon, Minhan;Kang, Jiyoon;Hussain, Shahzada Qamar;Khan, Shahbaz;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.235.2-235.2
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    • 2015
  • The front transparent conductive oxide (TCO) films must exhibit good transparency, low resistivity and excellent light scattering properties for high efficiency amorphous silicon (a-Si) thin film solar cells. The light trapping phenomenon is limited due to non-uniform and low aspect ratio of the textured glass [1]. We present the low cost electrochemically deposited uniform zinc oxide (ZnO) nanorods with various aspect ratios for a-Si thin film solar cells. Since the major drawback of the electrochemically deposited ZnO nanorods was the high sheet resistance and low transmittance that was overcome by depositing the RF magnetron sputtered AZO films as a seed layer with various thicknesses [2]. The length and diameters of the ZnO nanorods was controlled by varying the deposition conditions. The length of ZnO nanorods were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The uniform ZnO nanorods showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nanorods and much higher aspect ratios degraded the light scattering phenomenon. Therefore, we proposed our low cost and uniform ZnO nanorods for the high efficiency of thin film solar cells.

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夏秀 韓國 南東海岸의 湧昇의 構造 (Structure of Upwelling off the Southease Coast of Korea)

  • 이재철;나정열
    • 한국해양학회지
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    • 제20권3호
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    • pp.6-19
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    • 1985
  • 한국 남동해안의 풍향에 따른 거의 균일한 용승현상 중 특히 울기-감포 근해역에 현저하게 나타나는 용승의 원인을 해양관측 자료와 기상, 해수면 변위 및 표층수온의 일변화 자료를 이용하여 연구하였다. 바람에 의한 용승현상이 강도에 있어 지역적인 차이를 보이는 것은 두가지 요인의 복합적인 영향에 기인한다. 첫째로 울기-감포해안에 발달한 동한난류(EKWC)로 인한 등온선의 baroclinic tilting 요인과 둘째로 남동해안 주변의 지형적 영향을 들 수 있다. 동한난류의 baroclinic tilting효과는 대체로 울기-감포해안 근처에서 가장 강하게 나타나며, 이로 인해 계절에 관계없이 얕은 대륙붕위로 저층냉수가 편중되어 나타난다. 따라서 표면 가까이 용승에 의한 냉수괴가 존재하며 결국 울기-감포해안에서만 여름에 바람에 의한 용승으로 표층수온이 낮게 나타난다. 또한 부산에서 감포에 이르는 평탄한 연안 해저지형도 저층냉수의 용승을 증가시키는 작용을 한다.

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Comparison of the PSD radial profiles between before and after geosynchronous flux dropout: case studies using THEMIS observations

  • 황정아;이대영;김경찬;최은진;신대규;김진희;조정희
    • 천문학회보
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    • 제37권2호
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    • pp.122-122
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    • 2012
  • Geosynchronous electron flux dropouts are most likely due to fast drift loss of the particles to the magnetopause (or equivalently, the "magnetopause shadowing effect"). A possible effect related to the drift loss is the radial diffusion of PSD due to gradient of PSD set by the drift loss effect at an outer L region. This possibly implies that the drift loss can affect the flux levels even inside the trapping boundary. We recently investigated the details of such diffusion process by solving the diffusion equation with a set of initial and boundary conditions set by the drift loss. Motivated by the simulation work, we have examined observationally the energy spectrum and pitch angle distribution near trapping boundary during the geosynchronous flux dropouts. For this work, we have first identified a list of geosynchronous flux dropout events for 2007-2010 from GOES satellite electron measurements and solar wind pressures observed by ACE satellite. We have then used the electron data from the Time History of Events and Macroscale Interactions during Substorms (THEMIS) spacecraft measurements to investigate the particle fluxes. The five THEMIS spacecraft sufficiently cover the inner magnetospheric regions near the equatorial plane and thus provide us with data of much higher spatial resolution. In this paper, we report some case studies showing energy dependence during magnetopause shadowing effect.

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미세요철표면을 이용한 태핏 표면의 마모 저감에 관한 연구 (Wear Reduction of Tappet Surface by Undulated Surface)

  • 여창동;김대은
    • Tribology and Lubricants
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    • 제14권2호
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    • pp.63-74
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    • 1998
  • The damage of cam/tappet surface is one of the major reasons for energy loss in an I.C. engine. High friction causes the accelerated wear of the cam/tappet surfaces which in turn changes the valve opening/closing timing. During the accelerated test evidence of both rolling fatigue and sliding abrasive wear could be found. Based on the results of the accelerated test, a scheme was devised to decrease tappet wear. Wear reduction of the tappet was achieved by using undulated surface topography in the tappet center region. The wear reduction is achieved by trapping of the wear particles in the undulations as well as by increasing the supply of lubricant to the sliding interface.

전력케이블용 절연재료의 캐리어 극성 및 공간전하 측정기술에 관한 연구-PE-EVA에서의 하전입자의 거동 (A Study on the Space Charge Measurement Technique and Carrier Polarity of Insulating Materials on Power Cable)

  • 국상훈;박중순;강용철;권영수
    • 대한전기학회논문지
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    • 제41권2호
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    • pp.185-191
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    • 1992
  • In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.

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Dependence of Self-heating Effect on Width/Length Dimension in p-type Polycrystalline Silicon Thin Film Transistors

  • Lee, Seok-Woo;Kim, Young-Joo;Park, Soo-Jeong;Kang, Ho-Chul;Kim, Chang-Yeon;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.505-508
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    • 2006
  • Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.

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비정질 실리콘 박막 트랜지스터에서 전계효과 이동도의 Chebyshev 근사 (Chebyshev Approximation of Field-Effect Mobility in a-Si:H TFT)

  • 박재홍;김철주
    • 전자공학회논문지A
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    • 제31A권4호
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    • pp.77-83
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    • 1994
  • In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.

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짧은 채널 길이의 다결정 실리콘 박막 트랜지스터의 전기적 스트레스에 대한 연구 (A study of electrical stress on short channel poly-Si thin film transistors)

  • 최권영;김용상;한민구
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.126-132
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    • 1995
  • The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

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New PDP cell designs for high luminous efficiency and radiation transport model in PDP

  • Yang, Sung-Soo;Shin, Seung-Won;Kim, Hyun-Chul;Lee, Jae-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.590-593
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    • 2002
  • Using two- and three-dimensional fluid simulation codes, we have suggested several new plasma display panel (PDP) cell structures that have high luminous efficiency compared with conventional structure. To improve the luminance and discharge efficiency, we utilize long discharge path, lower electric field region, and reduction of power consumption by adding one auxiliary electrode or reducing the electrode area. Consequently, luminous efficiency increases about 1.8 times. Furthermore for the resonance radiation trapping effect in PDP system, we have described a self-consistent radiation transport model coupled with fluid simulation using modified Holstein's equation.

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