• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.261-261
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• 2016

플래시 메모리 (flash memory)는 DRAM(dynamic racdom access memory)이나 SRAM(static random access memory)에 비해 소자의 구조가 매우 단순하기 때문에 집적도가 높아서 기기의 소형화가 가능하다는 점과 제조비용이 낮다는 장점을 가지고 있다. 또한, 전원을 차단하면 정보가 사라지는 DRAM이나 SRAM과 달리 전원이 꺼지더라도 저장된 정보가 지워지지 않는다는 특징을 가지고 있어서 ROM(read only memory)과 정보의 입출력이 자유로운 RAM의 장점을 동시에 가지기 때문에 활용도가 크다. 또한, 속도가 빠르고 소비전력이 작아서 USB 드라이브, 디지털 TV, 디지털 캠코더, 디지털 카메라, 휴대전화, 개인용 휴대단말기, 게임기 및 MP3 플레이어 등에 널리 사용되고 있다. 특히, 낸드(NAND)형의 플래시 메모리는 고집적이 가능하며 하드디스크를 대체할 수 있어 고집적 음성이나 화상 등의 저장용으로 많이 쓰이며 일정량의 정보를 저장해두고 작업해야 하는 휴대형 기기에도 적합하며 가격도 노어(NOR)형에 비해 저렴하다는 장점을 가진다. 최근에는 smart watch, wearable device 등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 투명하고 유연한 메모리 소자에 대한 연구가 다양하게 진행되고 있으며 유리나 플라스틱과 같은 기판 위에서 투명한 플래시 메모리를 형성하는 기술에 대한 관심이 높아지고 있다. 전하트랩형 (charge trap type) 플래시 메모리는 플로팅 게이트형 플래시 메모리와는 다르게 정보를 절연막 층에 저장하므로 인접 셀간의 간섭이나 소자의 크기를 줄일 수 있기 때문에 투명하고 유연한 메모리 소자에 적용이 가능한 차세대 플래시 메모리로 기대되고 있다. 전하트랩형 플래시메모리는 정보를 저장하기 위하여 tunneling layer, trap layer, blocking layer의 3층으로 이루어진 게이트 절연막을 가진다. 전하트랩 플래시 메모리는 게이트 전압에 따라서 채널의 전자가 tunnel layer를 통해 trap layer에 주입되어 정보를 기억하게 되는데, trap layer에 주입된 전자가 다시 채널로 빠져나가는 charge loss 현상이 큰 문제점으로 지적된다. 따라서 tunnel layer의 막질향상을 위한 다양한 열처리 방법들이 제시되고 있으며, 기존의 CTA (conventional thermal annealing) 방식은 상대적으로 높은 온도와 긴 열처리 시간을 가지고, RTA (rapid thermal annealing) 방식은 매우 높은 열처리 온도를 필요로 하기 때문에 플라스틱, 유리와 같은 다양한 기판에 적용이 어렵다. 따라서 본 연구에서는 기존의 열처리 방식보다 에너지 전달 효율이 높고, 저온공정 및 열처리 시간을 단축시킬 수 있는 마이크로웨이브 열처리(microwave irradiation, MWI)를 도입하였다. Tunneling layer, trap layer, blocking layer를 가지는 MOS capacitor 구조의 전하트랩형 플래시 메모리를 제작하여 CTA, RTA, MWI 처리를 실시한 다음, 전기적 특성을 평가하였다. 그 결과, 마이크로웨이브 열처리를 실시한 메모리 소자는 CTA 처리한 소자와 거의 동등한 정도의 우수한 전기적인 특성을 나타내는 것을 확인하였다. 따라서, MWI를 이용하면 tunnel layer의 막질을 향상시킬 뿐만 아니라, thermal budget을 크게 줄일 수 있어 차세대 투명하고 유연한 메모리 소자 제작에 큰 기여를 할 것으로 예상한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.264-264
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• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• Korean journal of applied entomology
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• v.44 no.1 s.138
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• pp.31-36
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• 2005

Adoxophyes spp. are the major rests of a pear. The larvae attack both leaves and fruits. (Z)-9-tetradecenyl acetate (Z9-14:Ac), (Z)-11-tetradecenyl acetate (Z11-14:Ac), (E)-11-tetradecenyl acetate (E11-14:Ac) and 10-methyldodecyl acetate (10me-12:Ac) have been reported as the sex pheromone components of the genus Adoxophyes. Our objective was to determine the difference in sex pheromone composition of three different A. spp. populations each from Cheonan, Sangju, and Naju area orchards in Korea. Gas chromatography (GC) analyses of pheromone gland extracts of virgin females confirmed the presence of two compounds (Z9-14:Ac and Z11-14:Ac) in Cheonan and Sangju populations, and four compounds (Z9-14:Ac, Z11-14:Ac, E11-14:Ac and tome-12:Ac) in Naju population. The Z9-14:Ac and Z11-14:Ac were detected in the ratio of 80:20 in the Cheonan population and 3:97 in the Sangju population. Females of Naju population produced sex pheromone blend consisting of Z9-14:Ac, Z11-14:Ac, E11-14:Ac and 10me-12:Ac at a ratio of 31:62:6:1. Field trapping tests in pear orchards with Z9-14:Ac and Z11-14:Ac indicated that maximum captures of the male were obtained with traps baited by 80:20 in Cheonan, 10:90 in Sangju, and 30:70 in Naju. These results suggest that there are remarkable geographical variations in the sex pheromone composition of A. spp. in pear orchards in Korea, and taxonomic classification of these species must be carefully assessed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Korean Society of Food Science and Nutrition
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• v.43 no.4
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• pp.618-623
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• 2014

Sarijang, a soy sauce made from fermented black soybean (Rhynchosia nulubilis), sulfur fed duck, dried bark of Ulmus davidiana, Allium sativum, and bamboo salt, has been demonstrated to exert anti-inflammatory and anti-tumor activities. However, the antioxidant properties of Sarijang have not yet been elucidated. In this study, the antioxidant effects of Sarijang were investigated by determining total phenolic content (TPC), DPPH radical scavenging activity (DPPH RSA), total radical trapping antioxidant potential (TRAP), oxygen radical absorbance capacity (ORAC), and cellular antioxidant capacity (CAC). The inhibitory effects of Sarijang on oxidative stress-induced DNA damage (200 ${\mu}M$ $H_2O_2$, 250 ${\mu}M$ Fe-NTA, and 200 ${\mu}M$ HNE) in human leukocytes were evaluated by comet assay. The TPC of Sarijang was $1.04{\pm}0.01$ mg GAE/mL. DPPH RSA, TRAP, and ORAC values of Sarijang increased in a dose-dependent manner. The $IC_{50}$ for DPPH RSA of Sarijang was $11.2{\pm}0.3$ mg/mL, whereas $IC_{50}$ of TRAP was $209.5{\pm}2.0$ mg/mL. 2,2'-Azobis(2-amidinopropane) dihydrochloride (AAPH)-induced oxidative stress and oxidative stress-induced DNA damage in HepG2 cells were effectively abrogated by all tested concentrations of Sarijang (1~100 ${\mu}g/mL$). These results suggest that Sarijang has antioxidative activity and protective effects against oxidative DNA damage.

• Korean Journal of Environmental Biology
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• v.20 no.3
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• pp.197-204
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• 2002

Gourd seeds were irradiated with the doses of 0-20 Gy to investigate the effect of the low dose $\gamma$-radiation on the early growth and physiological activity. The stimulating effects of the low dose y- radiation on the early growth were not noticeably high, but were increased generally at 4-16 Gy irradiation group. The catalase and peroxidase activity of cotyledon from seeds irradiated with $\gamma$- radiation were increased at 8 Gy irradiation group. The photochemical activity of leaf was noticeably high at 4 Gy irradiation group. The photochemical yield of PSII, estimated as Fv/Fm, decreased with increasing illumination time by 50% after 4 hrs in the control and 8 Gy irradiation group, while Fo slightly increased. However, Fv/Em in the 4 Gy irradiation group decreased by 40% of inhibition, indicating that photoinhibition decreased by the low dose $\gamma$- radiation. Changes in the effective quantum yield of PSII, $\varphi_{PSII}$ and 1/Fo- l/Fm, a measure of the rate constant of excitation trapping by the PSII reaction center, showed similar pattern to Fv/Em. NPQ decreased by 70% after photoinhibitory treatment with showing similar pattern between the control and the irradiation group. These results showed the positive effect of low dose $\gamma$- radiation on the seedling growth and the reduction of photoinhibition in the 4 Gy irradiation group.

• Economic and Environmental Geology
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• v.36 no.3
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• pp.177-189
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• 2003

The main purposes of this study are to utilize mineralogical studies such as optical microscope, XRD and SEM/EDS analyses to characterize the oxidation of sulfide minerals and the mechanisms controlling the movement of dissolved metals from waste rocks at the abandoned Seobo mine. Mineralogical research of the waste rocks confirms the presence of anglesite, covellite, goethite, native sulfur and nsutite as secondary minerals, suggesting that these phases control the dissolved concentrations of As, Cu, Fe, Mn, Pb and Zn. The dissolved metals are precipitated, adsorbed and/or coprecipitated with(or within) Fe(Mn)-hydroxides and Mn(Fe)-hydroxides. The main phases of secondary mineral, Fe-hydroxide, can be classified as amorphous or poorly crystalline and more crystallized phases(e.g. goethite) by crystallinity. Amorphous or poorly crystalline Fe-hydroxide has relatively high As contents(9-24 wt.%). This poorly crystalline Fe-hydroxide changes toward more crystallized phase(e.g. goethite) which contains relatively low As(0.6-7.7 wt.%). These results are mainly due to the progressive release of As with the crystallization evolution of the As-trapping poorly crystalline Fe-hydroxides. It is also attributed to the differences of specific surface areas between the poorly crystalline Fe-hydroxides and well crystallized phases. The dissolved metals from waste rocks at Seobo mine area are naturally attenuated by a series of precipitation(as Fe, Mn, Cu, Pb), coprecipitation(Fe, Mn) and adsorption(As, Cu, Pb, An) reactions. The results of mineralogical researches permit to assess the environmental impacts of mine waste rocks in the areas, and can be used as a useful data to lay available mine restoration plan.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.33 no.1
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• pp.9-26
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• 1997

Stokes drift(SD) and Lagrangian discharge(LD) are important factors for analysis of flushing time, tidal exchange, solute transport and pollutant dispersion. The factors should be calculated using the approached method to flow phenomena. The aim of this paper re-examines the previous procedures for computing the SD and LD, and is to propose the new method approached to stratified flow field in the cross-section of coastal region, e.g. Masan Bay. The intensity of velocity near the bottom boundary layer(BBL) depends on the sea-bed irregularity in the coastal estuaries. So we calculated the depth mean velocity(DMV) considering that of BBL omitted in Kjerfve's calculation method. It revealed that BBL effect resulting in application of the bay acts largely on DMV in half more among 1l stations. The new expression of SD and LD per unit width in the cross-section using the developed DMV and proposed decomposition procedure of current were derived as follow : $$Q=u_0+\frac{1}{2}H_1{U_1cos(\varphi_h-\varphi_u)+U_3cos(\varphi_h-\varphi{ud})} LD ED SD$(Q_{skim}+Q_{sk2}) The third term, $Q_{sk2}$, on the right-hand of the equation is showed newly and arise from vertical oscillatory shear. According to the results applied in 3 cross-sections including 11 stations of the bay, the volume difference between proposed and previous SD was founded to be almost 2 times more at some stations. But their mean transport volumes over all stations are 18% less than the previous SD. Among two terms of SD, the flux of second term, $Q_{skim}$, is larger than third term, $Q_{sk2}$, in the main channel of cross-section, so that $Q_{skim}$ has a strong dependence on the tidal pumping, whereas third term is larger than second in the marginal channel. It means that $Q_{sk2}$ has trapping or shear effect more than tidal pumping phenomena. Maximum range of the fluctuation in LD is 40% as compared with the previous equations, but mean range of it is showed 11% at all stations, namely, small change. It mean that two components of SD interact as compensating flow. Therefore, the computation of SD and LD depend on decomposition procedure of velocity component in obtaining the volume transport of temporal and spacial flow through channels. The calculation of SD and LD proposed here can separate the shear effect from the previous SD component, so can be applied to non-uniform flow condition of cross-section, namely, baroclinic flow field.

• Korean Journal of Organic Agriculture
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• v.26 no.3
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• pp.381-391
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• 2018

This study was carried out to determine whether cage traps can be used to capture wild boars successfully, and to assess their response to different bait materials and the number of wild boars caught. Steel cage-traps ($4.0m{\times}1.5m{\times}1.2m$, $L{\times}W{\times}H$) were installed at two sites in Damyang County and at one site in Sunchang County, South Korea. To identify preferred bait-diet, baits were prepared with dry corn and fermented sour corn and placed in equal amounts at the sites close to wild boar pads at 200 m intervals. Before selecting trap locations where sufficient activity was observed, pre-baiting was undertaken and steel-framed traps were installed with gates open. Preference for bait materials was not clearly defined. After providing the bait for the first time, the number of days until wild boars ate all the food were counted. In the Damyang and Youngam areas, where hunting was allowed, total bait consumption took 6 to 12 days; in contrast, in the Sunchang area, where no hunting took place, total food consumption took only 5 days. In addition, after pre-baiting with the mixture of dry and sour corn for diet for about 8.7 days and then opening the trap gates for 3 more days, 13.7 days were necessary to catch 4.3 wild boars per trap. These results suggest that hunting intensity around trapping places was an important factor in determining the success of the traps.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.131-137
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• 2013

The thin insulator films for organic memory device were made by the plasma polymerization method using the styrene monomer which was not the wet process but the dry process. For the formation of stable plasma, we make an effort for controlling the monomer with bubbler and circulator system. The thickness of plasma polymerized styrene insulator layer was 430 nm, the thickness of the Au memory layer was 7 nm thickness of plasma polymerized styrene tunneling layer was 30, 60 nm, the thickness of pentacene active layer was 40 nm, the thickness of source and drain electrodes were 50 nm. The I-V characteristics of fabricated memory device got the hysteresis voltage of 45 V at 40/-40 V double sweep measuring conditions. If it compared with the results of previous paper which was the organic memory with the plasma polymerized MMA insulation thin film, this result was greater than 18 V, the improving ratio is 60%. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make the organic memory device with plasma polymerized styrene as the memory thin film.