• Title/Summary/Keyword: transport layer

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Improvement of electroluminescent efficiency by using interfacial exciton blocking layer in blue emitting electrophosphorescent organic light emitting diodes

  • Kim, Ji-Whan;Kim, Joo-Hyun;Yoon, Do-Yeung;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1381-1382
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    • 2005
  • We report improved efficiency in blue electrophosphorescent organic light emitting diodes by introducing an interfacial exciton blocking layer between light emitting layer (EML) and hole transport layer (HTL). Iridium(III) bis [(4,6-di-fluorophenyl)- pyridinato -N,C2']picolinate (FIrpic) was used as blue phosphorescent dopant and JHK6-3 with carbazole and electron transporting group as host and also as the interfacial layer, resulting in drastic increase in quantum efficiency.

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Globally Optimal Solutions for Cross-Layer Design in Fast-Fading Lossy Delay-Constrained MANETs

  • Pham, Quoc-Viet;Kim, Hoon;Hwang, Won-Joo
    • Journal of Korea Multimedia Society
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    • v.18 no.2
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    • pp.168-177
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    • 2015
  • To increase the overall utility and decrease the link delay and power consumption, a joint optimal cross-layer design of congestion control at the transport layer, link delay at the data link layer and power allocation at the physical layer for mobile ad hoc networks is considered in this paper. As opposed to previous work, the rate outage probability in this work is based on exactly closed-form; therefore, the proposed method can guarantee the globally optimal solutions to the underlying problem. The non-convex formulated problem is transformed into a convex one, which is solved by exploiting the duality technique. Finally, simulation results verify that our proposal achieves considerable benefits over the existing method.

High Temperature Oxidation of TiAl-based XD 45 and XD47 Intermetallics (TiAl계 XD45, XD47 금속간 화합물의 고온산화거동)

  • 심웅식;이동복
    • Journal of Surface Science and Engineering
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    • v.35 no.4
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    • pp.193-198
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    • 2002
  • Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

Effect of Surface Modification of Donor Plate on the Fabrication of OLED Devices by LITI Process

  • Bae, Heung-Kwon;Kim, Jin-Hoo;Kwon, Hyeok-Yong;Lee, Yoon-Soo;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.784-786
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    • 2009
  • Thermal transfer of emitting layer from the donor film to the substrates depends on the physical interaction between the donor film, the emitting layer, and the hole-transport layer (HTL). The interfacial adhesion between the donor film and the EML, the cohesive force of the EML, and the interfacial adhesion between the EML and the HIL have to be optimized to achieve good LITI pattern quality. It was found that surface pretreatment of the donor plate was important on the laser induced thermal transfer of the emitting layer onto the HIL layer of the OLED devices.

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Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InP-etchstop Layer (InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 특성 시뮬레이션에 관한 연구)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.2
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    • pp.53-57
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    • 2012
  • This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

Cross-Layer and End-to-End Optimization for the Integrated Wireless and Wireline Network

  • Gong, Seong-Lyong;Roh, Hee-Tae;Lee, Jang-Won
    • Journal of Communications and Networks
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    • v.14 no.5
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    • pp.554-565
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    • 2012
  • In this paper, we study a cross-layer and end-to-end optimization problem for the integrated wireless and wireline network that consists of one wireline core network and multiple wireless access networks. We consider joint end-to-end flow control/distribution at the transport and network layers and opportunistic scheduling at the data link and physical layers. We formulate a single stochastic optimization problem and solve it by using a dual approach and a stochastic sub-gradient algorithm. The developed algorithm can be implemented in a distributed way, vertically among communication layers and horizontally among all entities in the network, clearly showing what should be done at each layer and each entity and what parameters should be exchanged between layers and between entities. Numerical results show that our cross-layer and end-to-end optimization approach provides more efficient resource allocation than the conventional layered and separated optimization approach.

The Study on the the P3HT:PCBM Bulk Heterojunction Solar Cells Utilizing $WO_3$ Nano-particle As a Hole Transporting Layer

  • Choe, Ha-Na;Kim, Seong-Hyeon;Kim, Gyeong-Gon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.321-321
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    • 2010
  • The PEDOT:PSS layer is usually used as hole transporting layer for the polymer bulk heterojunction solar cells. However, the interface between ITO and PEDOT:PSS is not stable and the chemical reaction between ITO and PEDOT can result in degraded device performance. We used the tungsten oxides as a hole transport layer by spin-coating. The $WO_3$ nanoparticles were well dispersed in ammonium hydroxide and deionized water and formed thin layer on the ITO anode. We found that $WO_3$ surface is more hydrophobic than the bare ITO or PEDOT:PSS-coated surfaces. The hydrophobic surfaces promote an ordered growth of P3HT films. A higher degree of P3HT ordering is expected to improve the hole mobility and the lifetime of the device using the tungsten oxide showed better stability compared to the device using the PEDOT:PSS.

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Fabrication High Covered and Uniform Perovskite Absorbing Layer With Alkali Metal Halide for Planar Hetero-junction Perovskite Solar Cells

  • Lee, Hongseuk;Kim, Areum;Kwon, Hyeok-chan;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.427-427
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    • 2016
  • Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

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Fabrication and Characterization of High Efficiency Green PhOLEDs with [TCTA-TAZ] : Ir(ppy)3 Double Emission Layers ([TCTA-TAZ] : Ir(ppy)3 이중 발광층을 갖는 고효율 녹색 인광소자의 제작과 특성 평가)

  • Shin, Sang-Baie;Shin, Hyun-Kwan;Kim, Won-Ki;Jang, Ji-Geun
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.199-203
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    • 2008
  • High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

Active Materials for Energy Conversion and Storage Applications of ALD

  • Sin, Hyeon-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.75.2-75.2
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    • 2013
  • Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

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