• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.73-76
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• 2021

This thesis described the optical and electrical properties of the alternating current powder electroluminescent device based on Ag nanowire as a transparent electrode. The Ag nanowire electrode showed the morphology of 20 nm in diameter and 15 ㎛ in length. The transparent electroluminescent devices that were fabricated using the nanomilled ZnS : Cu, Mn phosphor by bar-coating process showed the transmittance of 67%. In order to improve the luminous efficiency, it is necessary to apply the transparent dielectric layer and increase the amount of the nanophosphor while maintaining the transmittance.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.813-815
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• 2008

We prepared highly transparent and conductive Oxide/Metal/Oxide(OMO) multilayer by sputtering and developed wet etching process of OMO with a clear edge shape for the first time. The transmittance and sheet-resistance of the OMO are about 89% and $3.3\;{\Omega}/sq.$, respectively. We adopted OMO as a gate electrode of transparent TFT (TTFT) array and integrated OLED on top of the TTFT to result in high aperture ratio of bottom emission AM-OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1598-1601
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• 2008

We describe the fabrication of transparent conducting single-walled carbon nanotubes (SWCNTs) film on flexible substrate following the conventional spin coating method. The fabricated film was post treated with diluted acid solution and its electrical and optical characterizations were performed. The electrical conductivity of SWCNTs film was enhanced and the film was found to be attached strongly with substrate after the post treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.474-475
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• 2009

As a substitute of ITO material, carbon nanotube (CNT) is widely studied for transparent conductive film (TCF). Current sheet resistance of CNT-TCF is about 100 ${\Omega}$/sq at 80% transmittance. But CNT-TCF performance in manufacturable level is about 500 ${\Omega}$/sq at 83% based on the Topnanosys Co's result. Therefore, critical issue in CNT-TCF research is to reduce the sheet resistance with manufacturing reliability. In this report, recent developments using CNT-TCF are introduced. Touch panel, transparent LED signboard, transparent speaker and transparent heater are representative examples. Also I describe the future issues and prospect of CNT-TCF for the flexible display.

• Ceramist
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• v.21 no.1
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• pp.12-23
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• 2018

As the flexible displays have been considered as a breakthrough to make a new electronics category, transparent electrodes have also confronted with an emerging issue, i.e., they also need to be mechanically flexible. For this to be made possible, a transparent electrode capable of withstanding large amounts of strain must be developed. Indium tin oxide (ITO) has been one of the most widely adopted transparent electrodes for displays and other transparent electronics, mainly supported by its high electrical conductivity and optical transparency. However, its brittle nature has forced the display industry to search for other alternatives. Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Here we reviewed recently-published research works introducing flexible displays, all of which are employing the novel candidates for a conducting material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.101-105
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• 2016

The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.