• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• 조명전기설비학회논문지
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• 제22권11호
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• pp.36-43
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• 2008

In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• 대한전기학회논문지
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• 제43권6호
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.93-94
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• 2009

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.290-293
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• 2012

This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.

• 한국세라믹학회지
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• 제41권2호
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• pp.102-105
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• 2004

ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.