• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.351-352
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• 2012

UV LED에서 p-GaN층의 높은 일함수와 자체 면저항이 크기 때문에 current spreading layer인 ITO (indium tin oxide) 투명전극이 사용되고 있다. 따라서 높은 UV 파장대 투과율과 낮은 면 저항이 매우 중요하다. 본 연구에서, RF magnetron sputter를 사용하여 ITO 투명전극을 glass(boro33)에 120 nm 두께로 증착하였다. 그 후 RTA (rapid thermal annealing)을 이용해 120초 동안 $600^{\circ}C$에서 Air, $N_2$ (15 sccm), vacuum 환경에서 열처리를 하여 UV-Vis-NIR spectrophotometer를 사용해 ITO 박막의 투과율을 측정하고, Hall measurement system을 이용하여 전기적 특성을 측정하였다. Fig. 1과 같이 열처리 환경에 따라 ITO 박막의 투과율이 변하고 또한 Table 1과 같이 전기적 특성도 변함을 알 수 있었다. Air 환경에서의 열처리는 reference 샘플과 비교 했을 때 400 nm 이하의 파장에서 투과율이 증가하였지만 400 nm 이상의 파장에서는 투과율이 낮아짐을 볼 수 있고, 면 저항 (Ohm/sq)은 오히려 reference (as deposited) 샘플과 비교하여 24 Ohm/sq 증가하는 것을 알 수 있었다. 반면에 $N_2$, vacuum 환경에서 열처리는 reference (as deposited) 샘플 보다 380 nm 파장대에서 16% 정도 높은 투과율을 보였고, 면저항 역시 2배 이상 낮아졌다. 둘 다 비슷한 투과율과 면저항을 나타내었지만 vacuum 환경이 좀 더 우수한 광학적 특성을 나타내었고 반면에 $N_2$ 환경은 좀 더 낮은 면저항을 나타내었다. ITO 박막을 증착한 후 vacuum 환경에서 열처리를 통하여 제작된 UV-LED (중심 파장 380 nm)가 Fig. 2와 같이 입력 전류 450 mA에서 광출력이 46% 정도 향상 되었고 안정된 I-V 특성 보였다.

• Journal of the Korean Chemical Society
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• v.56 no.6
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• pp.725-730
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• 2012

HEMA (2-hydroxyethyl methacrylate), EGDMA (ethylene glycol dimethacrylate; cross-linker), MMA (methyl methacrylate) and AA (acrylic acid) were copolymerized with ethyl gallate and propyl gallate as additives in the presence of AIBN (2,2'-azobisisobutyronitrile; initiator). The measurement of physical properties of the produced copolymers exhibited that refractive index, water content, visible transmittance, tensile strength, and contact angle were in the range of 1.433-1.435, 38.71-38.99%, 85.4-88.8%, 0.2468-0.2740 kgf and $49.77-36.29^{\circ}$, respectively. The transmittances of the copolymers were measured to be in the range of 49.0-7.4% and 71.0-43.4% for UV-B and UV-A, respectively, indicating that the copolymers have UV-blocking effect. The produced copolymers containing ethyl gallate and propyl gallate satisfied the basic physical properties required for the fabrication of hydrogel contact lenses. The copolymers showed an increase of wettability and UV-blocking effects while having no significant change in water content compared to the gallate-free copolymers.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.237.1-237.1
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• 2015

OLED의 낮은 외부 광자 효율 문제를 해결하기 위해서는 발광층은 물론 전극 재료에 대한 연구가 함께 진행되어야 한다. 최근 플렉서블 디스플레이(Flexible Display) 분야에서 투명전극(Transparent Electrode)은 큰 주목을 받고 있다. 기존 전자소자의 투명전극으로는 인듐산화물(ITO, Indium Tin Oxide)이 널리 사용되어 왔으나, ITO의 주원료인 인듐(Indium)은 희소성으로 인해 앞으로 30년 후에 고갈될 것으로 예상되어 ITO를 대체할만한 투명전극 재료가 필요하게 되었다. 인듐이 포함되지 않은(Indium-free) 투명전극을 개발하려는 많은 연구들이 진행 중인데, 본 연구에서는 PEN(Polyethylene Naphthalate) 유연기판 상에 그래핀(Graphene)을 투명전극으로 구현하여 OLED의 효율을 높이는데 이용하고자 하였다. 화학 기상 증착(CVD, Chemical Vapor Deposition) 방법을 이용하여 Cu 호일 위에 그래핀을 성장시킨 후 PEN 유연기판에 전사하여 그래핀 투명전극을 구현하면서 그래핀 성장층을 단층 또는 다층으로 구분하여 성장시켜 각각의 투명전극을 구현해보았다. 유연기판 상의 그래핀의 상태를 확인하기 위해 라만 분광(Raman Spectroscopy) 분석을 이용하여 그래핀 고유의 라만 꼭지점(Raman peak)인 G 꼭지점(G peak: 1580 cm-1), 2D 꼭지점(2D peak: ~2700 cm-1)을 확인하였는데 그래핀 전사 상태가 양호하여 D 꼭지점(D peak: ~1360 cm-1)은 나타나지 않았다. 원자힘 현미경(AFM, Atomic Force Microscope) 분석을 통해 다층 및 단층 그래핀 표면의 거칠기(Roughness) 및 두께(Thickness)를 각각 확인할 수 있었고 자외선-가시광선 분광법(UV-Visible Spectroscopy) 분석으로 그래핀 투명전극과 유연기판의 투과도(Transmittance)를 분석하였으며, 단층 그래핀 투과도가 90%수준의 높은 값이 나타나 ITO보다 개선됨을 확인하였다. 그래핀 면저항은 TLM(Transmission Line Measurement)법을 통해 측정하였는데, 단층 그래핀의 경우 $800{\Omega}/{\square}$ 내외 수준임을 확인할 수 있었다. 본 연구에서는 근자외선 영역에서 높은 투과도와 우수한 전기적 특성을 가지는 그래핀 투명 전도성 전극 구조를 제안하고, 나아가 가시영역에서 ITO를 대체할 수 있는 투명 전도성 전극 물질을 개발함으로써 발광다이오드의 광효율을 높일 수 있는 투명 전도성 전극을 구현하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• Journal of the Korean Chemical Society
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• v.54 no.3
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• pp.317-322
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• 2010

This study used 4-fluorostyrene with the cross-linker EGDMA (ethylene glycol dimethacrylate), HEMA (2-hydroxyethyl methacrylate) and the initiator AIBN (azobisisobutyronitrile) for copolymerization. Measurement of the physical properties of the copolymerized polymer showed that the water content was 19.98 ~ 31.08%, refractive index 1.443 ~ 1.475, visible transmittance 87 ~ 93% and tensile strength 0.246 ~ 0.311 kgf while the contact angle showed a distribution between $54.14^{\circ}$ and $66.95^{\circ}$. Therefore, the ophthalmic material produced using 4-fluorostyrene satisfied the basic physical properties required for contact lenses and also showed an increase in wettability and refractive index while having no significant change in water content with relation to styrene. Based on the results of this study, the produced copolymer is suitable for use as a material to high refractive index and wettability contact lenses.

• Journal of the Korean Chemical Society
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• v.56 no.5
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• pp.597-602
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• 2012

The copolymerization of triacetoxyvinylsilane, EGDMA (ethylene glycol dimethacrylate as a cross-linker), HEMA (2-hydroxyethyl methacrylate), MMA (methyl methacrylate), MA (methacrylic acid) was performed in the presence of AIBN (2,2'-azobisisobutyronitrile) as an initiator. Measurement of the physical properties of the resulting copolymers showed that water content, refractive index, visible ray transmittance, and tensile strength were in the range of 35.63~32.44%, 1.4382~1.4480, 89.0~92.5% and 0.346~0.674 kgf, respectively. The values of tensile strength of copolymers-containing hexamethylene diisocyanate were higher than those of the copolymers containing triacetoxyvinylsilane. From the results we came to the conclusion that the produced copolymers are suitable for the application of ophthalmic contact lens with high tensile strength, wettability and duraility.

• Korean Journal of Soil Science and Fertilizer
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• v.36 no.2
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• pp.92-103
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• 2003

Research and technological advances in the field of remote sensing have greatly enhanced the ability to detect and quantify physical and biological stresses that affect the productivity of agricultural crops. Reflectance in specific visible and near-infrared regions of the electromagnetic spectrum have proved useful in detection of nutrient deficiencies. Especially crop canopy sensors as a ground remote sensing measure the amount of light reflected from nearby surfaces such as leaf tissue or soil and is in contrast to aircraft or satellite platforms that generate photographs or various types of digital images. Multi-spectral vegetation indices derived from crop canopy reflectance in relatively wide wave band can be used to monitor the growth response of plants in relation to environmental factors. The normalized difference vegetation index (NDVI), where NDVI = (NIR-Red)/(NIR+Red), was originally proposed as a means of estimating green biomass. The basis of this relationship is the strong absorption (low reflectance) of red light by chlorophyll and low absorption (high reflectance and transmittance) in the near infrared (NIR) by green leaves. Thereafter many researchers have proposed the other indices for assessing crop vegetation due to confounding soil background effects in the measurement. The green normalized difference vegetation index (GNDVI), where the green band is substituted for the red band in the NDVI equation, was proved to be more useful for assessing canopy variation in green crop biomass related to nitrogen fertility in soils. Consequently ground remote sensing as a non destructive real-time assessment of nitrogen status in plant was thought to be useful tool for site specific crop nitrogen management providing both spatial and temporal information.

• Journal of Institute of Control, Robotics and Systems
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• v.19 no.11
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• pp.979-983
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• 2013

The three-dimensional measurement method of confocal systems is a spot scanning method which has a high resolution and good illumination efficiency. However, conventional confocal systems had a weak point in that it has to perform XY axis scanning to achieve FOV (Field of View) vision through spot scanning. There are some methods to improve this problem involving the use of a galvano mirror [1], pin-hole array, etc. Therefore, in this paper we propose a method to improve a parallel mode confocal system using a micro-lens and pin-hole array in a dual microscope configuration. We made an area scan possible by using a combination MLA (Micro Lens Array) and pin-hole array, and used an objective lens to improve the light transmittance and signal-to-noise ratio. Additionally, we made it possible to change the objective lens so that it is possible to select a lens considering the reflection characteristic of the measuring object and proper magnification. We did an experiment using 5X, 2.3X objective lens, and did a calibration of height using a VLSI calibration target.