• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.203-206
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• 2004

In this study the ITO thin films were prepared by using FTS(Facing Targets Sputtering) system. The electric characteristics, transmittance, surface roughness of ITO thin films were investigated as a function of varying input current and working gas pressure at room temperature. As a result, the ITO thin film was fabricated with resistivity $6{\times}10^{-4}[\Omega{\cdot}cm]$, carrier mobility $52.11[cm^2/V{\cdot}sec]$, carrier concentration $1.72{\times}10^{20}[cm^{-3}]$ of ITO thin film at working pressure 1mTorr and input current 0.6A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.485-486
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• 2005

Fringe-field switching mode which has a horizontal and vertical electric field exhibits high transmittance and wide viewing angle characteristics. In the FFS mode, a passivation layer between common and pixel electrodes exists, which functions as preventing current leakage of fringe-field. In this paper, we have studied LC behavior, transmittance and operating voltage characteristics with applied voltage as a function of the passivation layer thickness and defined optimal value of the layer to be about $0.5{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.547-550
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• 2004

Indium tin oxide(ITO) films were prepared as a function of varying the proportion of oxygen$[0{\sim}1.0sccm]$ at fixed he gas[20sccm] by facing targets sputtering(FTS) system. Then electrical and optical properties of ITO thin films were estimated by Hall effect measurement system and UV/VIS-spectrometer. In the result, at very little oxygen rate, we can prepare a low resistivity ITO thin film of $3.40{\times}10^{-4}[\Omega{\cdot}cm]$ and transmittance of over 80%. So we noticed that the ITO thin film with low resistivity and high transmittance was prepared by FTS at room temperature.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.185-191
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• 2003

In this study, We measured transmittance and color change of various photochromic lens as a function of temperature(6, 12, $28^{\circ}C$), irradiation time of UVA lamp and the types of materials(plastic and glass) and distribution of photochromic ingredients(coated and bulk type). The coated-type photochromic lens showed higher saturated value than bulk-type lens without regard to temperature. And darkening rate of smoke color lenses were higher compare to brown lens in case of glass photochromic lens. All of photochromic lens passed ANSI Z80.3 regulation in transmittance and color independent of temperature. The saturated values of plastic photochromic lens excluded coated-type and glass photochromic lens were ranked as cosmetic use. The saturated value of coated-type. Tbr and TMs were general applications in $6^{\circ}C$ and $12^{\circ}C$, but cosmetic purpose in $28^{\circ}C$. The darkening rate was increased with decreasing temperature, whereas the fading rate became higher with increasing temperature.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.264-269
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• 2015

An infrared (IR) bolometer measures the change of resistance by absorbing incident IR radiation and generates a signal as a function of the radiation intensity. Since a bolometer requires temperature stabilization and light filtering except for the infrared rays, it is essential for the device to be packaged meeting conditions that above mentioned. Minimization of heat loss is needed in order to stabilize temperature of bolometer. Heat loss by conduction or convection requires a medium, so the heat loss will be minimized if the medium is a vacuum. Therefore, vacuum packaging for bolometer is necessary. Another important element in bolometer packaging is germanium (Ge) window, which transmits IR radiation to heat the bolometer. To ensure a complete transmittance of IR light, anti-reflection (AR) coatings are deposited on both sides of the window. Although the transmittance of Ge window is high for IR rays, it is difficult to use frequently in low-price IR bolometer because of its high price. In this paper, we fabricated IR window by utilizing silicon (Si) substrate instead of Ge in order to reduce the cost of bolometer packaging. To enhance the IR transmittance through Si substrate, it is textured using Reactive Ion Etching (RIE). The texturing process of Si substrate is performed along with the change of experimental conditions such as gas ratio, pressure, etching time and RF power.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.6
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• pp.288-292
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• 2013

We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural, electrical and optical properties of GZO/$TiO_2$ thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron's irradiation energy. The electron irradiated GZO/$TiO_2$ films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/$TiO_2$ films irradiated at 900 eV shows the lowest resistivity of $4.3{\times}10^{-3}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18 eV in this study.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.115-116
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• 2018

본 논문은 Polymer Dispersed Liquid Crystal (PDLC) 필름의 투과도 조절을 위한 전원 공급 장치 개발을 목적으로 한다. PDLC의 경우 블라인드를 대신하여 많이 사용된다. 따라서 계절, 시간, 날씨 등의 환경적 요인으로 사용자의 요구 및 필요에 의해 투과도 조절기능이 요구된다. 하지만 현재 시스템은 변압기를 사용하여 PDLC 필름을 구동시켜 투과도 조절이 어렵다. 본 논문에서는 인버터 출력의 듀티 비를 조절하여 PDLC 필름의 투과도 조절을 구현하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.6
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• pp.569-577
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• 2012

In this study, a theoretical investigation of optimized sleeper spacing which can suppress resonances of a railway track is attempted. To achieve this, we introduced a minimization problem in which the objective function is given by the wave transmittance and the design variable is defined by sleeper distribution. In the analysis the rail is modeled by a Timoshenko beam and the sleeper is represented by a mass. The infinite track analysis is realized by attaching the transmitting boundaries at both ends of the finite optimization region. Through numerical analyses the sleeper spacing effective in reduction of the transmittance is discussed. Furthermore, the feasibility of the proposed method is validated in the aspect of vibration reduction through response analyses for a harmonic load.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.85-89
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• 2016

In this paper, we studied effects of tilting angle of band pass filter on the characteristics of fluorescence imaging system. Theoretical modeling showed that transmittance and filtering range are highly dependent on the tilting angle. Measurements on transmittance as a function of wavelength confirmed that changes in transmittance and the band filter range are in good agreement with theoretical prediction. Therefore, characteristics of band pass filter can be precisely tuned by altering tilting angle of band pass filter in order to enhance fluorescence signal in bio imaging system.