• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.363-366
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• 2002

In this paper, we present a Ku-band OMT(orthomode transducer) structure employing a simple waveguide transition withou a septum. Various aspects of the OMT design are discussed. The design is carried out using a commercial software HFSSe The designed OMT shows good characteristics over 12.5114.25 CHz frequency bands.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.215-218
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• 2002

Design methods are presented for a broadband corrugated horn antenna operating X/Ku band (7.25-14.5 CHz). The corrugated horn consists of a circular waveguide taper, a mode converter, a waveguide-to-horn transition, and a hem section. Methods of design are presented for each section. The designed antenna shows excellent characteristics over the entire operating frequency range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• Journal of information and communication convergence engineering
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• v.14 no.4
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• pp.222-226
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• 2016

A design method for a compact square loop antenna fed by a microstrip (MS) line for indoor digital television (DTV) applications is proposed. The proposed antenna consists of a square loop, circular sectors, and an MS line. The square loop combined with circular sectors is printed on one side of a substrate, and a $75-{\Omega}$ MS line is printed on the other side. The circular sectors are used as a wideband balun or transition to connect the MS line and the square loop. A prototype of the proposed square loop antenna operating in the DTV band (470-806 MHz) is designed and fabricated on an FR4 substrate. Experimental results show that the proposed antenna has the desired impedance characteristics in the frequency band of 464-1,220 MHz (89.8%) for a voltage standing wave ratio (VSWR) of <2 covering the DTV band, and a broadside gain of 0.8-3.3 dBi in the DTV band.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.105-111
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• 2002

New high-performance Ka-band waveguide-to-microstrip transitions for millimeter-wave transceiver applications have been developed and characterized. These transitions are probe-type, but the dielectric material completely covers the whole waveguide aperture, thus providing moisture-barrier and robustness in the probe section. The new probe transitions are also designed to be less sensitive to fabrication tolerances. Further performance enhancements have been obtained by placing vias around the waveguide aperture. Also, the resonance phenomena associated with waveguide wall-penetration have been identified. The developed probe transitions provide insertion loss less than 0.4 dB over entire Ka-band frequencies, but can be optimized for narrowband applications with insertion loss less than 0.2 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.76-84
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• 2012

In this paper, two kinds of E-plane microstrip-to-waveguide transitions are optimally designed and fabricated for combining output power from multiple small-power amplifiers in a WR-28 waveguide because conventional K connectors cause unnecessary insertion loss and adaptor loss. The transition design is based on target specifications such as a center frequency of 35 GHz, bandwidth of ${\pm}500MHz$, 0.1 dB insertion loss and 20 dB return loss. Performance variation caused by mechanical tolerance and assembly deviation is fully evaluated by three dimensional electromagnetic simulation. The fabricated back-to-back transitions with 16 mm and 26.57 mm interstage microstrip lines show insertion loss per transition of ~0.1 dB at 35 GHz and average 0.2 dB over full Ka band. Also the back-to-back transition shows return loss greater than 15 dB, which implies that the transition itself has return loss better than 20 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.714-720
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• 2009

In this paper, design and the implementation method of a band-tunable ultra-wideband planar doubler are described Microstrip-to-CPS(balun) transition and Microstrip-to-CPW transition are respectively used for input/output matching circuits for the doubler. The Input balun structure allows to apply diode bias, and the doubler output frequency is tunable by changing the diode bias voltage. With the bias voltage of -0.6 V, the measured operating frequency band of the implemented doubler is $10{\sim}20$ GHz, with the bias voltage of $-0.2{\sim}-0.4$ V, the operating frequency band is $10{\sim}30$ GHz, and with 0 V bias, the operating frequency band is $20{\sim}30$ GHz. The doubler provides conversion loss of less than 15 dB and fundamental frequency suppression of 30 dB.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.162-167
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• 2006

The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.