• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.6 s.97
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• pp.580-585
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• 2005

Two high-efficiency and high power power-combing modules were developed using slotline-to-microstrip transition at V-band. Power-combining modules incorporating two MMIC power amplifiers demonstrated combining efficiencies higher than $80\%$(maximum $86\%$) with saturated output power of 22.96 dBm and 22.81 dBm, respectively. The measurement of back-to-back connected combiners demonstrated insertion loss less than 1.2 dB with return loss better than 15 dB around 60 GHz, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.489-493
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• 1999

In this paper, an analysis of microstrip-slotline transition is performed using a 3D vector Finite Element Method(FEM). Artificial anistropic absorber technique is employed to implement an matching boundary condition in FEM. On the base of the analysis, power divider/combiner is designed. The structure of the power combiner already developed are Branch-line coupler, Rat-race coupler, Wilkinson coupler, Lange coupler, etc. Which are all planar, If the frequency goes up, the coupling efficiency of these planar couplers is decreased on account of skin loss. Especially, in millimeter-wave band, the efficiency of more than two ways combiner is radically reduced, so that application in power amplifier circuit is almost impossible, Microstrip-slotline transition structure is a power combining technique integrated into wave-guide, so that the loss is small and the efficiency is high. Theoretically, we can mount several transistors into the power-combiner. This makes it possible to develop a high power amplifier. The numerically calculated performances of the device that is, we believe, the best are compared to the experimental results in Ka-Band(26.5GHz-40GHz).

• Current Applied Physics
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• v.18 no.11
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• pp.1393-1398
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• 2018

We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.189-194
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• 2012

This paper is about frequency allocation of LTE Base Station(BS) in the spare band which is generated by DTV transition. In the case of frequency allocation of LTE BS in adjacent band with DTV channel 51 among the spare band, the guard bands that requires for no interference between LTE and DTV system were calculated. As a result, 5.5 MHz of guard band for LTE BS and 2 MHz of guard band for DTV receiver were suggested based on interference analysis between LTE BS and DTV BS, respectively.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.163-168
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• 2018

We developed W-band transceiver module using open MMIC chip such as receiver single chip and transmitting power amplifier. In order to calculate the noise figure and output power value, we analyzed the W-band transition loss from the antenna to MMIC connection and constructed the 12 channel receiver and the 5 channel transmitter. And compared with the results of the measurement. As a result, the output power of the transmitter was similar to the analytical results and the measured results at room temperature and environmental conditions. The noise figure of the receiver was also similar, but some channels showed error of about 3 dB due to manufacturing error.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.234-238
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• 2009

In the excitation spectra of $YNbO_4$ : $Eu^{3+}$, the charge transfer (CT) band around 270 nm due to $[NbO_4]^{3-}$$-Eu^{3+}$ interaction and sharp excitation peaks by f-f transition of $Eu^{3+}$ strongly appeared simultaneously. CT band depended on the structural properties of powders, showing the red-shift with increasing the crystallinity, while the f-f transition peaks were independent of the crystallinity. For $YNb_{1-x}Ta_xO_4$ : $Eu^{3+}$ (x = 0.05.0.2), $[TaO_4]^{3-}$. configuration was locally constructed, leading to the blue-shift in CT band and the decrease in the red emission intensity with increasing the Ta content.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.257-259
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• 2002

As a new host material for a red phosphor for PDP applications, has studied (Y,Gd)$Al_3(BO_3)_4$ which gives non-centrosymmetric sites for $Eu^{3+}$ activators. Vacuum ultraviolet (VUV) excitation spectrum of new red phosphor (Y,Gd)$Al_3(BO_3)_4$:$Eu^{3+}$ has two broad bands. One band with the absorption edge at ca. 168 nm is the band-gap absorption of aluminoborate and the other broad band centered 240 nm is the charge transfer transition between $Eu^{3+}$ and the neighboring oxygen anions. The PL spectrum shows the strongest emission at 617 nm due to the electric dipole $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, whose luminescent chromaticity is (0.67, 0.33).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.9
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• pp.685-690
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• 1987

Adaptive design of IIR digiral filters using equation error method has been studied. In this paper, a design technique of IIR digital filters using output error method with adaptive compensator is presented. In computer simulation results, it is shown that flat response characteristic in pass-band, below-40[dB] attenuation characteristic in stop-band, sharf cut-off characteristic in transition-band, and phase characteristic is linearin pass-band.