• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.8 no.6
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• pp.939-946
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• 2018

In this work, we present simple schematics for a three-terminal graphene-based nanoelectromechanical switch with the vertical electrode, and we investigated their operational dynamics via classical molecular dynamics simulations. The main structure is both the vertical pin electrode grown in the center of the square hole and the graphene covering on the hole. The potential difference between the bottom gate of the hole and the graphene of the top cover is applied to deflect the graphene. By performing classical molecular dynamic simulations, we investigate the nanoelectromechanical properties of a three-terminal graphene-based nanoelectromechanical switch with vertical pin electrode, which can be switched by the externally applied force. The elastostatic energy of the deflected graphene is also very important factor to analyze the three-terminal graphene-based nanoelectromechanical switch. This simulation work explicitly demonstrated that such devices are applicable to nanoscale sensors and quantum computing, as well as ultra-fast-response switching devices.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.73-77
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• 2023

In this study, we developed a Multi-level FeRAM (Ferroelectrics random access memory) device utilizing different ferroelectric materials and analyzed its operation through C-V analysis using simulations. To achieve Multi-level operation, we proposed an MFM (Multi-Ferroelectric Material) structure by depositing two different ferroelectric materials with distinct properties horizontally on the same bottom electrode and subsequently adding a gate electrode on top. By analyzing C-V peaks based on the polarization phenomenon occurring under different voltage conditions for the two materials, we confirmed the feasibility of achieving Multi-level operation, where either one or both of the materials can be polarized. Furthermore, we validated the process for implementing the proposed structure using semiconductor fabrication through process simulations. These results signify the significance of the new structure as it allows storing multiple states in a single memory cell, thereby greatly enhancing memory integration.

• Journal of Digital Convergence
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• v.16 no.9
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• pp.107-114
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• 2018

Since China's economic reform in 1978, international trade has enormously flourished and the port industry is reckoned as a key factor contributing to this growth. This study examines the Bohai Rim port group in the scope of top three largest ports Qingdao, Dalian and Tianjin. By utilizing indicators including concentration ratio (CR), Herfindahl-Hirschman index (HHI), the Gini coefficient and the Lorenz curve as well as shift-share analysis (SSA), the concentration level of this port group in the period 2004-2016 is discussed. As a results, CR demonstrates a decrease during the studied period with a minor fluctuation, and HHI index shows a trend of deconcentration with Bohai Rim port group. In addition, SSA indicates that during the period 2004-2016, the overall shift index of Qingdao port was -1.371 meanwhile with Tianjin and Dalian port were 0.118 and 1.252 in turn. These results suggest that the growth in regional influence of Tianjin and Dalian ports would motivate to the deconcentration pattern in Bohai Rim region. The findings assist decision makers and scholars to obtain knowledge about the port development this region. Considering the geographic position of these three ports as the gate of northeast China, it is suggested that these three ports could explore their advantages and cooperate with the small ports in the surrounding area to enhance their influences in the future study.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.207-213
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• 1997

A field effect transistor(FET) type dissolved carbon dioxide($pCO_{2}$) sensor with a double layer structure of hydrogel membrane and $CO_{2}$ gas permeable membrane was fabricated by utilizing a $H^{+}$ ion selective field effect transistor(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N',N'-tetramethyl othylenediarnine(TED) as $O_{2}$ quencher without using polyester film as a $O_{2}$ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type $pCO_{2}$ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of $10^{-3}{\sim}10^{0}\;mol/{\ell}$ of dissolved $CO_{2}$ in aqueous solution with high sensitivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.431-441
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• 2003

This paper presents the design of 32 bit microprocessor for a sequence control using a field programmable gate array(FPGA). The microprocessor was designed by a VHDL with top down method, the program memory was separated from the data memory for high speed execution of sequence instructions. Therefore it was possible that sequence instructions could be operated at the same time during the instruction fetch cycle. In order to reduce the instruction decoding time and the interface time of the data memory interface, an instruction code size was implemented by 32 bits. And the real time debug operation was implemented for easeful debugging the designed processor with a single step run, PC break point run, data memory break point run. Also in this designed microprocessor, pulse instructions, step controllers, master controllers, BM and BCD type arithmetic instructions, barrel shift instructions were implemented for sequence logic control. The FPGA was synthesized under a Xilinx's Foundation 4.2i Project Manager using a V600EHQ240 which contains 600,000 gates. Finally simulation and experiment were successfully performed respectively. For showing good performance, the designed microprocessor for the sequence logic control was compared with the H8S/2148 microprocessor which contained many bit instructions for sequence logic control. The designed processor for the sequence logic showed good performance.

• Journal of the Korean Society of Costume
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• v.22
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• pp.205-224
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• 1994

It was aimed to study the costume of Koryo dynasty based upon the thirty pictures of Bud-dha to hang on the wall among the existing Buddist paintings. The costume to study were made about 64 years during the King Chung-yol(1286) to the King Chung-jong(1350) which style was mostly related in Won Dynasty. 가) Men's wear ; 1. Hair style and hair dress ; Man tied up a top knot and they put on the hat such as a Kuan Kun and Mo. The young boys binds his hair up one, two, and three knot-s, and tied up with a hair ribbon, A kinds of Kuan-mo were Mine-lu-kuan Yuan-yu-kuan, Nong-kuan, Hae-chi-kuan Pok-du Yun-wha-kuan Yip-mo- and Tu-ku(Helmeto) 2. clothes ; 1) Colour of Koryo King's Mien-ku Kuan costume was not agree with blue and reddish black colour which was used in Yo, Song, Kum and Won Dynasty, however black and greenhish blue colour was agreed with. 2) The king wore T'ung-t'ien-kuan(Yuan-yu-kuan) and the government officials wore Chin-hien-kuan Hae-chi-kuan and Nong-kuan as a court dress. In general the king and the Crown Prince wore a hats which was used in T'ung-t'ien system however sometimes they wore small hats which was cited in literature. 3) Gate guard and upper garment wore colourful costume figured gold colour pattern which was distin-gtive costume system of Koryo. 4) A monk wore big sleeve long skirt big sleeve long jacket long skirt and shoulder scar-f full shoulder scarf or right hand shoulder opened scarf. 5) The Soldiers wore helmet shoulder or scarf pee-back hung-kap, pok-kap, yang-dan-g-kap we-yu-kap kun-kap, and boots and they carried arms. 6) The young boys wore scarf, loin cloth, long skirt, belt neckless, wan-silk, boots and foots wear and wristless. 나) Women's wear ; 1. Hair style and hairs and tied up with a hair ribbon and wore precious ston decorated hair dress wheel shape hair dress pan shaped head dress handkerchif covered hair dress decorated precious stone hair pin silk chippon made of head dress muf-fler shaped hairdress. Boots mocasin hae lee, suk and sandle wored as a shoes depends on the classes. They wore neckless, earing wres-tless and wan-pu-sik. 2. Closthe 1) High rank lade's wore un-kyun attached jacket and jacket sleeves decorated pleats and pleats decorated long skirt apron back apron knot belt, scarf this type is the same with Dang Dynasty five dynasty of china Song, Kum Won, Myung Dynasty and our cos-tume of Poe-hae, and Shilla Dynasty.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Korean Journal of Heritage: History & Science
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• v.45 no.4
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• pp.22-37
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• 2012

Storage facility of the pre-historic Korea is classified into the subterranean, ground and overground types. The rectangular-shaped subterranean Storage facilities have been identified in the Pungnaptoseong, the Gong mountain fortress site and the Gwanbukri site. Feature no. 196 at Gyeongdang District in Pungnaptoseong yielded a large quantity of glazed potteries, and a wooden storage at the Gwanbukri site contained a large amount of fruit seeds. These storage facilities might be functioned as the warehouse for the highest group rather than the storage for the emergency such as war and flooding and stipend of government officials. This article subdivided into "state storage" on the concept of the former that "royal storage" on the concept of the latter. If it look on the state storage at large, this include the royal storage too. But it subdivided to help article understand because Baekjae changed from state storage to royal storage by change and specialization of system after 4th. The reason why the diversification of storage pits was closely related to the unification of local polities and the concentration of political power in the state-level. Therefore, it might reflect the political circumstances the ruling elites attempted to heighten their authority in terms of the organizing tax collecting system. And divided the time of storage is confirmed separative storage pits in the suburbs of capital city. There is hight probability of top local polities or nation that have possessional a role. This is to cover on frequent war in the Three States. On the other hand, state storage is located around ancent road that linked castle gate that is divided into center and periphery depending on function and position of storage. Center is located royal storage focusing in the presumed royal palace that periphery is located state storage to provide service to the public. It is presumed that located with the government office.