• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.226-231
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• 1999

Pyroelectric infrared sensors have been fabricated using P(VDF/TrFE) film with pyroelectric effect. The weight percent and thickness of the poled P(VDF/TrFE) film are 75/25 percent and $25\;{\mu}m$ respectively. For easier fabrication and connection method new top and bottom electrodes design was adapted for human body detecting pyroelectric infrared sensor. An aluminum infrared absorption electrode and bottom electrode were deposited by thermal evaporator. And the device was mounted in TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The responsibility, NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $9.62{\times}10^5\;V/W$, $3.95{\times}10^{-7}\;W$ and $5.06{\times}10^5\;cm/W$ under emission energy of $13\;{\mu}W/cm^2$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Korean Journal of Applied Biomechanics
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• v.13 no.1
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• pp.95-108
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• 2003

The purposes of this study were to analyze the muscle activities and the characteristics of muscle recruiting patterns of upper trunk for Ssirum dutguri technique using three top-ranked elite Ssirum players. The EMG technique was used to record muscle activities of both right and left sides of latissimus dorsi, biceps brachii, and erector spinae. Six surface electrodes were placed on the surface of the selected muscles and one ground electrode was also attached on the back of neck(C7). One video camera was also used to record the Ssirum motion to define 4 events and 3 phases for further analysis. The raw EMG data were filtered with band pass filter (50-400 Hz) to remove artifacts and then low pass filtered (4 Hz) to find the linear envelope which resemble muscle tension curve. This filtered EMG data were normalized to MVIC for the purpose of comparion between the subjects. The results were indicated that each subject with different physical characteristics showed very different muscle activity patterns. Although Ssirum dutguri is considered as foot technique the player grasped opponent's satba(belt) with both hands when they play. Because of this reason, activities of upper trunk muscles were relatively high. However, direct comparison between upper and lower body muscles was not possible due to the lack of the data in present study. Interestingly, all threes subjects showed that erector spinae muscle activity was comparatively higher than those of latissimus dorsi and biceps brachii. This implies to reinforce back muscle as a routine of training to improve performance or to prevent back injury.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.697-700
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• 2004

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.344-348
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• 2007

In this paper, we propose the electrode of the Patterned Vertical Aligned (PVA) cell [1] for high transmittance. We use the 'TechWiz LCD' for calculation of the director configuration and optical characteristics to ensure the results of the proposed electrode structure. In general, the transmittance of the PVA cell depends on the shape of the electrode and cell gap. In this work the width of gate line and data line of the improved electrode design is set to be equal to that of the PVA conventional. Instead, we modified the shape of the top and bottom electrode on order to decrease the area of the defect. For verification, we compared the calculated optical transmittance of the PVA cell with the proposed electrode structure to the conventional PVA cell . As a result, we can confirm that the optical loss due to the variation of the retardation the LC cell around electrode can be definitely decreased by the proposed electrode.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.43-47
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• 2022

In this study, we demonstrated an eco-friendly thin-metallic-film-based heater which can be operated in water. Based on the materials stability, Mo was selected as the heating element to secure long-term stability. Using a magnetron sputtering, 40 nm-thick Mo layers were deposited onto a glass substrate, followed by the deposition of 60-nm-thick ZnO layer to prevent oxidation during the heater fabrication process. Then, PVB (Polyvinyl Butyral) was applied on top of ZnO layer and an additional glass substrate was placed, which were heated at 150℃ for 2 hr. The PVB was cured with strong adhesion by the processing condition. We operated the Glass/Mo/ZnO/Glass heater in water, and it was shown that the water temperature reached 50℃ within 2 minutes, with a minimal resistance change of the heater. Finally, the heaters exhibit a semi-transparency, and this aesthetic advantage is expected to contribute to the added value of the heater.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• Journal of Korean Physical Therapy Science
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• v.6 no.1
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• pp.897-903
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• 1999

Many out patients of the rehabilitation center complaint a pain caused by suffering of MPS, and it brings many different kind of social and ecinomical problems such as medical expenses and the reduction in work efficiency. Therefore, we conducted a research to present a fast and effective treatment to the MPS patients. this research was conducted from November, 1996 to January 1998 with eighteen outpatients who agreed to be the subjects to our reserach. We applied the electric acupuncture on 28 different trigger point on the patients with mostly muscular-skeletal pain and some tender and radiating pain. After the treatment, VRS, VAS, PRI were used to measure the degree of the pain on the patients third and seventh visits, and following results were found. 1. To apply EAP treatment, we acupunctured 6em-Iong needles on Tps region, then the electrodes of pulse generater pg-306 E.S.T were connected on the top of the needles. the electric acupuncture therapy was conducted for 20 minutes with the intensity of 4hz - 60hz(auto wave). The treated electric intensity was the level at which the patients did not feel discomfort. 2. Thirteen out of the 18 participated patients were in their 30s and 40s(72.2%), showing highest frequency. There were more female than male with the ratio of 1 to 1:2. 3. six out of the participated patients (33.3%) had the pain for less then a week, and the average duration of the pain of the participated patients wear 0.8 years. 4. The pain occured mostly in the upper trapezius by 6 part (21.4%), then in the gluteus medius region by 4 part (14.3%). Many of the patients with the pain in the upper back area accompanied varios kind of the referred pains such as radiculopathy, HIVD and Frozen shoulder. 5. MPS occured more frequently on the right side than left side then left side and it seemed to be due to the frequent use of the right hand. 6. There was almost no difference in the measurement of the intensity of the pain right before and after the EAP treatment. Howerver, there was significant decrease in the numerical values of the VAS, and a little bit of decrease in the numerical values of the PRI after the EAP treatment. 7. Based on the results of this present research, it can be concluded that EAP can be used for the treating the myofascial pain syndrome with promptness and safety in most cases.