• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.123-125
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• 2006

The $TiO_2$ sol was prepared hydrothermally in an autoclave from aqueous $TiOCl_2$ solutions as a starting precursor. Hollow fibers were obtained when the sol-gel-derived $TiO_2$ sol was treated chemically with a NaOH solution and subsequently heated in the autoclave under various conditions. A systematic analysis of the influence of different NaOH concentrations on the formation of nanotubes was carried out. The details of the nanotubular structure were investigated by using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). From the TEM images, the outer and the inner diameters of the tubes were measured to be about 8 and 4 nm, respectively, the lengths were measured to be several hundreds of nanometers.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.207-211
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• 2012

Spinel-$Li_4Ti_5O_{12}$ was successfully synthesized by a solid-phase method at 800, 850, and $900^{\circ}C$ according to the $Li_4Ti_5O_{12}$ cubic spinel phase structure. To achieve higher EDLC energy density with the $Li_4Ti_5O_{12}$, the negative electrode of the hybrid supercapacitor was studied in this work. The electrochemical performances of the hybrid supercapacitor and EDLC were characterized by constant current discharge curves, c-rate, and cycle performance testing. The capacitance (1st cycle) of the hybrid supercapacitor and EDLC was 209 and 109 F, respectively, which is higher than EDLC. The capacitance of the hybrid supercapacitor decreases from 209 F to 101 F after 20 cycles when discharged at several specific current densities ranging from 1 to 10 A. In contrast, capacitance of the EDLC hardly decreases after 20 cycles. Results show that hybrid supercapacitor benefits from the high rate capability of supercapacitor and high capacity of the battery. Findings also prove that the hybrid supercapacitor is an energy storage device where the supercapacitor and the Li ion secondary battery coexist in one cell system.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.293-295
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• 1994

Barium Titanate ($BaTiO_3$) is one of the few titanateds which is cubic at room temperature. It has the perovskite structure, high dielectric constant (${\varepsilon}_r=300$) and a small temperature coefficient of resistance due to it's Low transition temperature ($Tc=120^{\circ}c$). PTCR (Positive Temperature Coefficient of Resistivity) thermistor in thin film $BaTiO_3$ system was prepared by using radio frequency (13.56MHz) and BC magnetron sputter equipment. Polycrystalline, and surface structure characteristics of the specimens were measured by X-ray diffraction (D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M. JSM84 01, Japan), respectively. Temperature at below $600^{\circ}C$, $1000^{\circ}C$ to $700^{\circ}C$, and above $1100^{\circ}C$ for spotted $BaTiO_3$ thin films showed the amorphous, degree of crystal growth, and polycrystalline, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.904-911
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• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.341-342
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_3O_{12}$ (BGT), thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si substrates by a sol-gel method and their structural and ferroelectric properties have been characterized. Fabricated BGT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The remanent polarization ($2P_r$)) of BGT thin film annealed at $720^{\circ}C$ was $25.85\;{\mu}C/cm^2$ at an applied voltage of 5 V. The BGT thin films exhibited a 11 % reduction in their switching charge after no less than $10^{11}$ switching cycles at a frequency of 1 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.311-312
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• 2006

The dielectric Properties of add $Li_2CO_3$ to ($Ba_{0.6}Sr_{0.4})TiO_3$ powder in this research, made thick film by tape casting method and annealing at $970^{\circ}C$ for 2 hours each from the $O_2$, Ar and O2-plasma atmosphere were investigated. The dielectric Properties of Ar atmosphere was to higher with tunability. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).