• 제목/요약/키워드: tin dioxide

검색결과 51건 처리시간 0.035초

높은 표면적을 갖는 SnO 나노구조물의 열처리 효과에 관한 연구 (A Study on the Annealing Effect of SnO Nanostructures with High Surface Area)

  • 김종일;김기출
    • 한국산학기술학회논문지
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    • 제19권9호
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    • pp.536-542
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    • 2018
  • 이산화주석은 Rutile 구조를 갖는 Oxygen-Deficient n-type 반도체 물질로서, $H_2$, CO, $CO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 가지고 있고, 이러한 성질을 활용하면 다양한 가스의 감지가 가능하기 때문에 가스센서로 연구가 활발히 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체의 흡착이 유리하고, 가스 센서의 성능이 향상될 수 있다. 본 연구에서는 Thermal CVD 공정을 이용하여 SnO Nanoplatelet을 Si 기판위에 Dense하게 성장시켰다. 기상 수송 방법(Vapor Transport Method)으로 성장된 SnO 나노구조물을 Thermal CVD System을 이용하여 산소분위기에서 $830^{\circ}C$$1030^{\circ}C$에서 열처리(Post-Annealing)하여 $SnO_2$ 상(Phase)을 갖도록 하였다. 열처리 과정동안 쳄버의 압력을 4.2 Torr로 일정하게 유지시켰다. 열처리 된 SnO 나노구조물의 결정학적 특성을 Raman Spectroscopy 및 XRD 분석을 통하여 확인하였고, 형태학적 변화를 주사전사현미경(Scanning Electron Microscopy)을 통하여 확인하였다. 분석결과 SnO 나노구조물은 열처리 과정을 통하여 $SnO_2$ 나노구조물로 상변환 되었다.

Synthesis and Characterization of SnO2 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition Using SnCl4 Precursor and Oxygen Plasma

  • 이동권;김다영;권세훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.254-254
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    • 2016
  • Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

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SnO2를 이용한 CO 및 NOx 가스 감지 센서 제작 및 특성 연구 (Fabrication and Evaluation of the SnO2 Based Gas Sensor for CO and NOx Detection)

  • 김만재;이유진;안효진;이상훈
    • 한국자동차공학회논문집
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    • 제23권5호
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    • pp.515-523
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    • 2015
  • In this paper, we fabricated and evaluated the gas sensor for the detection of CO gas and $NO_X$ gas among the vehicle exhaust emission gasses. The $SnO_2$ (tin dioxide) layer is used as the detection material, and the thin-film type and the nano-fiber type layers are deposited with various thicknesses using sputtering method and electro spinning method, respectively. The experiments are performed in the chamber where the gas concentration is controlled with mass flow controller. The fabricated devices are applied to the CO and $NO_X$ gas, where the device with the thinner $SnO_2$ layer shows better sensitivity. The nano-fiber has the larger surface area, and the shorter response time and recovery time are obtained. From the experimental results, both types of gas sensors successfully detect CO and $NO_X$ gases, which can be applied to measure those gases from the vehicle emissions.

Pd 및 CNT 첨가에 따른 $SnO_2$ 박막의 이산화질소 감지특성 ($NO_2$ gas sensing properties of $SnO_2$ thin films dopped with Pd and CNT)

  • 김형균;이임렬
    • 마이크로전자및패키징학회지
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    • 제15권4호
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    • pp.101-106
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    • 2008
  • 이산화질소를 감지할 수 있는 센서물질로 Pd과 탄소 나노튜브(CNT)가 첨가된 $SnO_2$ 박막을 스핀코팅으로 제조하였으며, 동 시편의 이산화질소에 대한 감지 특성을 $200^{\circ}C$$1ppm{\sim}5ppm$$NO_2$ 농도 하에서 측정하였다. 센서시편의 전기저항은 $NO_2$ 기체의 노출과 농도에 따라 증가 하였으며, Pd이 3wt%로 첨가된 시편의 감도는 26.5로 첨가전의 감도에 비하여 10배 증가하였다. 또한 $SnO_2$ 모체에 첨가한 CNT의 량에 따라서도 감도는 증가 하였으며, 0.225wt% CNT 첨가 시 5ppm의 $NO_2$ 농도에서 감도 값은 72이었다.

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Effect of TiO2 Coating Thickness on Photovoltaic Performance of Dye-sensitized Solar Cells Prepared by Screen-printing Using TiO2 Powders

  • Lee, Deuk Yong;Cho, Hun;Kang, Daejun;Kang, Jong-Ho;Lee, Myung-Hyun;Kim, Bae-Yeon;Cho, Nam-Ihn
    • 한국세라믹학회지
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    • 제51권4호
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    • pp.362-366
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    • 2014
  • Dye-sensitized solar cells (DSSCs) were synthesized using a $0.25cm^2$ area of a $TiO_2$ nanoparticle layer as the electrode and platinum (Pt) as the counter electrode. The $TiO_2$ nanoparticle layers (12 to 22 ${\mu}m$) were screen-printed on fluorine-doped tin oxide glass. Glancing angle X-ray diffraction results indicated that the $TiO_2$ layer is composed of pure anatase with no traces of rutile $TiO_2$. The Pt counter electrode and the ruthenium dye anchored $TiO_2$ electrode were then assembled. The best photovoltaic performance of DSSC, which consists of a $18{\mu}m$ thick $TiO_2$ nanoparticle layer, was observed at a short circuit current density ($J_{sc}$) of $14.68mA{\cdot}cm^{-2}$, an open circuit voltage ($V_{oc}$) of 0.72V, a fill factor (FF) of 63.0%, and an energy conversion efficiency (${\eta}$) of 6.65%. It can be concluded that the electrode thickness is attributed to the energy conversion efficiency of DSSCs.

SnO2 기반 고체상의 투과도 가변 소자 제조 (Fabrication of SnO2-based All-solid-state Transmittance Variation Devices)

  • 신동균;서유석;이진영;박종운
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.23-29
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    • 2020
  • Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO2). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO2 layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO2 layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO2-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO2) and silicone (Si).

SiO2의 첨가를 통한 Polyfluorene계 Polymer-OLED의 발광 동작 개선 가능성 (Improved On-off Property of SiO2 Embedded Polyfluorene Polymer-OLED)

  • 전병주;김효준;김종수;정용석
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.40-44
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    • 2017
  • The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

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유기 발광소자의 효율 향상을 위한 광학박막 및 마이크로렌즈 설계 (Optical Thin Film and Micro Lens Design for Efficiency Improvement of Organic Light Emitting Diode)

  • 기현철;김두근;김선훈;김상기;박아름;구할본
    • 한국전기전자재료학회논문지
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    • 제24권10호
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    • pp.817-821
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    • 2011
  • We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

나노 입자를 이용한 PCB 기반 후막 가스 센서 (Thick Film Gas Sensor Based on PCB by Using Nano Particles)

  • 박성호;이충일;송순호;김용준
    • 마이크로전자및패키징학회지
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    • 제14권2호
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    • pp.59-63
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    • 2007
  • 간단한 PCB 공정을 기반으로 하여 저가형의 후막 가스 센서 모듈을 제안하고자 한다. 제안된 센서 모듈은 $NO_2/H_2$ 가스 센서와 습도센서, 그리고 히터를 포함한다. $NO_2/H_2$ 가스와 상대 습도 센서들은 각각 $SnO_2$$BaTiO_3$ 나노 입자들을 PCB 기판에서의 IDT(interdigital Transducer)에 프린팅 함으로써 제작되었다. 처음에 1% $H_2$ 가스를 센서 쳄버에 공급하고 4분 후 $H_2$가스 공급을 멈추고 공기를 주입시켰으며, 이러한 동작을 반복적으로 수행하였다. 마찬가지로 $NO_2$로 감지하도록 같은 동작을 실행하였다. $H_2$ 가스에 대한 결과는 도전성의 증가로 인하여 0.8V에서 3.5V로 증가함을 볼 수 있었으며, $H_2$ 가스를 주입한후의 반응 시간은 65초였다. $NO_2$ 가스의 경우는 도전성이 감소함으로써 2.7 V의 전압강하가 일어 났으며, 반응시간은 3초였다.

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Generator 컬럼용 68GeO2 합성 및 68Ga3+의 거동에 관한 연구 (Study on Synthesis of 68GeO2 and Behavior of 68Ga3+ for Generator Column)

  • 김건균;이준영;김상욱;허민구;양승대;박정훈
    • 방사선산업학회지
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    • 제10권4호
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    • pp.189-192
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    • 2016
  • $^{68}Ga$ has emerged as a promising candidate for non-invasive diagnostic imaging within Positron Emission Tomography (PET) because of its advantageous radiochemical characteristics ($t_{1/2}=68min$, ${\beta}^+$ yield ~89%). $^{68}Ga$ forms a stable chelation with various ligands and it is possible to be quickly and easily study using a $^{68}Ge/^{68}Ga$ generator. Commercial $^{68}Ge/^{68}Ga$ generators are chromatographic system using the inorganic materials such as alumina and tin dioxide which are employed as column matrixes for $^{68}Ge$. In this study, we tried out to make $^{68}Ge/^{68}Ga$ generator system with the $^{68}GeO_2$ microstructures for column matrix. $^{68}Ge$ tends to have stable bond with oxide as $^{68}GeO_2$ microstructures. The $^{68}GeO_2$ has been synthesized by hydrolysis of $GeCl_4$ (sol-gel method) and characterized by X-ray diffraction and scanning electron microscope for geometrical analysis. The stability of $GeO_2$ was tested using eluents with diverse solvents(water, ethanol and 0.1 N HCl). The radioactivity of $^{68}Ga^{3+}$ in eluate through $GeO_2$ was measured to prove a function as column material for a generator.