• Journal of Preventive Medicine and Public Health
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• v.46 no.1
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• pp.19-27
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• 2013

Objectives: This study was conducted to investigate the relationship between heat-related illnesses developed in the summer of 2012 and temperature. Methods: The study analyzed data generated by a heat wave surveillance system operated by the Korea Centers for Disease Control and Prevention during the summer of 2012. The daily maximum temperature, average temperature, and maximum heat index were compared to identify the most suitable index for this study. A piecewise linear model was used to identify the threshold temperature and the relative risk (RR) above the threshold temperature according to patient characteristics and region. Results: The total number of patients during the 3 months was 975. Of the three temperature indicators, the daily maximum temperature showed the best goodness of fit with the model. The RR of the total patient incidence was 1.691 (1.641 to 1.743) per $1^{\circ}C$ after $31.2^{\circ}C$. The RR above the threshold temperature of women (1.822, 1.716 to 1.934) was greater than that of men (1.643, 1.587 to 1.701). The threshold temperature was the lowest in the age group of 20 to 64 ($30.4^{\circ}C$), and the RR was the highest in the ${\geq}65$ age group (1.863, 1.755 to 1.978). The threshold temperature of the provinces ($30.5^{\circ}C$) was lower than that of the metropolitan cities ($32.2^{\circ}C$). Metropolitan cities at higher latitudes had a greater RR than other cities at lower latitudes. Conclusions: The influences of temperature on heat-related illnesses vary according to gender, age, and region. A surveillance system and public health program should reflect these factors in their implementation.

• 전기의세계
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• v.22 no.2
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• pp.45-50
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• 1973

Amorphous semiconducting diodes from As Te Ge systm of which resitivity are 10$^{6}$ -10$^{8}$ .ohm.-cm order, are made and they exhibited several conducting states. A high conductivity, low conductivity and memory state are reported. Temperature dependency of the specimens are widerange. According to the procedure and cooling method, specimens are made easily or not. Threshold voltage of switching and memory diodes is in proportional to compositonal quantity of Arsenic. Threshold voltage is changed widely according to ambient temperature. Threshold voltage of #132 is 620V at 25.deg. C, 70V at 100.deg. C.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.196-201
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• 2011

It is known that the relative dielectric constant of insulating polyethylene matrix composites with conducting materials (such as carbon black and metal powder) increases as the conducting material content increases below the percolation threshold. Below the percolation threshold, dielectric properties show an ohmic behavior and their value is almost the same as that of the matrix. The change is very small, but its origin is not clear. In this paper, the dielectric properties of carbon black-filled polyethylene matrix composites are studied based on the effect medium approximation theory. Although there is a significant amount of literature on the calculation based on the theory of changing the parameters, an overall discussion taking into account the theory is required in order to explain the dielectric properties of the composites. Changes of dielectric properties and the temperature dependence of dielectric properties of the composites made of carbon particle and polyethylene below the percolation threshold for the volume fraction of carbon black have been discussed based on the theory. Above the percolation threshold, the composites are satisfied with the universal law of conductivity, whereas below the percolation threshold, they give the critical exponent of s = 1 for dielectric constant. The rate at which the percentages of both the dielectric constant and the dielectric loss factor for temperature increases with more volume fraction below the percolation threshold.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.221-225
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• 2007

We have prepared $\delta$-phase SbTe alloy with various Sb contents of 64, 72, and 76 at. % and investigated the phase change temperature, the crystal structures of $\delta$-phase SbTe alloy, and determined the ovonic threshold switching voltages with edge contact type phase transition dimensions. As a result, the crystallization temperature is slightly reduced from 126 to $122^{\circ}C$, whereas the melting temperature is not changed. The ovonic threshold switching voltage is reduced from 1.6 to 0.9 V as increasing the Sb content from 64 to 76 at. %. It is found that the reductions of crystallization temperature and the ovonic threshold switching voltage are closely related with the interplanar spacing between adjacent atomic layers and the stacking number of atomic layers in a unit cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.148-148
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• 2010

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.

• Journal of Power System Engineering
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• v.4 no.4
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• pp.41-47
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• 2000

Fatigue crack propagation rate and threshold characteristics of the SA516/70 steel which is used for the low temperature pressure vessels, were studied in the room temperature of $25^{\circ}C$ and low temperature ranges of $-10^{\circ}C,\;-30^{\circ}C,\;-60^{\circ}C\;and\;-80^{\circ}C$ with stress ratio of R=0.1. In the logarithmic relationship between the fatigue crack propagation rate($d{\alpha}/dN$) and stress intensity factor range ${\Delta}K$, the linear relationship was obtained up to $d{\alpha}/dN=4.425{\times}10^4mm/cycle$ in the same of room temperature, but in low temperature case, the relationship was extended to the range of low crack propagation rate. The fractured specimens were examined by SEM. Tested results showed that specimen failed at low temperature exhibit the quasi-cleavage fracture formation however considerable ductility proceed final fracture.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.4
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• pp.201-208
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• 1992

An experimental study of the constitutive response of precipitation-strengthened Al-0.55wt% Zr alloy, which consists of an Al matrix precipitation-strengthened by coherent particles, ${\beta}^{\prime}(Al_3Zr)$ with $L1_2$ structure has been performed. The deformation response of the materials has been examined by stress relaxation test at 573K, 623K and 673K. It was found that there exist the threshold stress during stress relaxation and threshold stress results from the presense of ${\beta}^{\prime}(Al_3Zr)$ particles. The ratio of threshold stress and Orowan stress decreased gradually with increasing temperature. The resistance to climb-pass of particles was independent of particles size for a fixed volume fraction although the threshold for bowing and particles cutting are sensitive to the particles dimensions. The smaller particles cutted by dislocations. This behavior of dislocations in this alloy was explained in terms of the small value antiphase boundary energy. The dislocation networks wrere more extensive in spesimens subjected to stress relaxation and there were numerous areas that have a high denstiy of jogged dislocation. This experiment results indicate that the rate controlling stress relaxation process is the climb of edge dislocation over particles.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.59-71
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• 2002

Photonic band gap structures have a high potential for nearly zero-threshold lasers. This paper describes new-types of low-threshold photonic crystal lasers fabricated in InGaAsP slab waveguides free-standing in air. Two-types of photonic crystal lasers are studied. One is a single-cell nano-cavity laser formed in a square array of air holes. This photonic band gap laser operates in the smallest possible whispering gallery mode with a theoretical Q >30000 and exhibits low threshold pump power of 0.8 mW at room temperature. The nther laser does not have any cavity structure and the lasing operation originates from the enhanced optical density of states near photonic band edges. A very low threshold of 35 $\mu$W (incident pump power) is achieved from this laser at 80 K, one of the lowest values ever reported. This low threshold is benefited from low optical losses as well as enhanced material gain at low temperature.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.7
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• pp.278-284
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• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• Journal of Environmental Health Sciences
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• v.38 no.6
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• pp.460-471
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• 2012

Objectives: Due to global warming resulting from climate change, there has been increasing interest in the relationship between temperature and mortality. These temperature-related deaths depend on diverse conditions related to a given place and person, as well as on time. This study examined changes in the impact of high temperatures on death in summer, using the effect and burden of elevated temperatures on deaths in Seoul and Daegu. Methods: A Poisson regression model was used to estimate short-term temperature effects on mortality. Temperature-related risks were divided into three time periods of equal length (1996-2000, 2001-2005, and 2006-2010). In addition, in order to compare the impact of high temperatures on deaths, this study calculated the proportion of attributable deaths to population, which simultaneously considers the threshold and the slope above the threshold. Results: The effect and burden of high temperatures on deaths is high in Daegu. However, the impact (i.e. the effect and burden) of elevated summer temperatures on deaths has declined over the past 15 years. Sensitivity analyses using alternative thresholds show the robustness of these findings. Conclusion: This study suggests that the attributable burden of high temperatures on deaths to be more plausible than relative risk or threshold for comparing the health impact of high temperatures across populations. Moreover, these results contain important implications for the development or the adjustment of present and future strategies and policies for controlling the temperature-related health burden on populations.