• 한국신뢰성학회지:신뢰성응용연구
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• 제6권2호
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• pp.135-150
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• 2006

Rubber material properties and lifetime evaluation are very important in design procedure to assure the safety and reliability of the rubber components. This paper discusses the failure mechanism and material tests were carried out to predict the useful lifetime of NBR and EPDM for compression motor, which is used in refrigerator component. The heat-aging process leads not only to mechanical properties change but also to chemical structure change so called degradation. In order to investigate the aging effects on the material properties, the accelerated test were carried out. The stress-strain curves were plotted from the results of the tensile test for virgin and heat-aged rubber specimens. The rubber specimens were heat-aged in an oven at the temperature ranging from $70^{\circ}C\;to\;100^{\circ}C$ for a period ranging from 1 to 180 days. Compression set results changes as the threshold are used for assessment of the useful life and time to threshold value were plotted against reciprocal of absolute temperature to give the Arrhenius plot. By using the compression set test, several useful lifetime prediction equations for rubber material were proposed.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• 한국환경과학회지
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• 제30권1호
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• pp.45-55
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• 2021

In this study, the odor of the parts and the odor of the surrounding environment were classified and verified. In order to increase the reliability of odor quantitative/qualitative analysis, the selection criteria for 5 sensory evaluators were established, and the n-Butanol control solution for each odor intensity was periodically trained to recognize the odor intensity before sensory evaluation. In addition, although various odor thresholds have been used through several studies, verification of whether the odor intensity value obtained through GC/MSD analysis is similar to the degree to which a person directly smells and feels it. It is important to select the odor threshold that has the best correlation with the odor intensity calculated by the person smelling the odor. Finally, sampling and measuring flowing airflow and temporary odors such as odor component analysis was experimentally difficult due to limited collection space and differences in concentration of generated components. In this study, a quantitative analysis was made possible by using the low temperature concentration (cooling) trap method. Through this, it was confirmed that the correlation with the actual odor intensity was not caused by the product itself, but by the environmental factor discharged from the product after creating the odor environment.

• Current Optics and Photonics
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• 제7권6호
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• pp.714-720
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• 2023

Laser cleaning has the advantages of environmental protection, precision, and high efficiency, and has good prospects for application in removing oxide films on the surface of aluminum alloy. This paper discusses the cleaning threshold and cleaning mechanism of aluminum alloy surface oxide film. A nanosecond pulsed laser was used to remove a 5-㎛-thick oxide film from the surface of 7A04 aluminum alloy, and the target surface temperature and cleaning depth were simulated. The effects of different laser energy densities on the surface morphology of the aluminum alloy were analyzed, and the plasma motion process was recorded using a high-speed camera. The temperature measurement results of the experiment are close to the simulation results. The results show that the laser cleaning of aluminum alloy oxide film is mainly based on the vaporization mechanism and the shock wave generated by the explosion.

• 대한전자공학회논문지
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• 제5권2호
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• pp.8-14
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• 1968

트란지스타 단일안정 멀티바이부래타(monostable multi-vibrator)와 시리콘턴넬 다이오드 (T.D)로써 구성된 전류파 파고변별기를 설계하여 그 특성을 조사하였다. 피측정 전류액의 범위는 50㎂-5.23mA이며, 이 범위에 있어서 측정된 최대비직선도는 ±0.75% 이었다. 이 변별기의 전류액 분해능은 T.D를 통하여 흐르는 편의전류에 따라서 약간 달라지며 역방향 편의전류가 3 mA 일때, 만일 5%의 과잉파고를 주용한다면 그 분해시간은 2μS이다. 다음에 이 변별기의 임계치 안정도는 주로 T.D의 턴넬전류의 최대치 1 의 안정도에 의하여 좌우되며 환경온도의 변화범위가 0℃∼50℃일때는 최대비직선도 즉 ±0.75T 보다 더큰 임계치변화는 관측되지 않았다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.158-166
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• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

• 한국초전도ㆍ저온공학회논문지
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• 제11권3호
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• pp.20-25
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• 2009

The quench detection system of the KSTAR (Korea Superconducting Tokamak Advanced Research) primarily uses the resistive voltage measurement due to a quench. This method is to detect the resistive voltage generated by a quench, which is continuously maintained above the preset voltage threshold for a given holding time. As the KSTAR PF (Poloidal Field) coils are operated in the pulse current mode, the large inductive voltages are generated. Therefore the voltage threshold and the quench holding time should be determined by considering both the inductive voltages measured during the operation, and the maximum conductor temperature rise through the quench analysis. In this paper, the compensation methods for minimizing the inductive voltages are presented for the KSTAR PF coils. The quench hot spot analysis of the PF coils was carried out by the analytical and numerical methods for determining the proper values of the quench voltage threshold and the allowable quench protection delay time.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2001년도 추계학술대회 논문집(Proceeding of the KOSME 2001 Autumn Annual Meeting)
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• pp.65-70
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• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, low temperature and high temperature at $25^{\circ}C$, -3$0^{\circ}C$, -5$0^{\circ}C$, -7$0^{\circ}C$, -10$0^{\circ}C$ and 5$0^{\circ}C$, 10$0^{\circ}C$ , 15$0^{\circ}C$, 18$0^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\DeltaK_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 한국응용곤충학회지
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• 제43권2호
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• pp.111-116
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• 2004

목화진딧물 발육실험은 15-35$^{\circ}C$, 습도는 60-70%, 광주기는 16：8 (L：D h)에서 수행 하였다. 진딧물 약충 사망률은 초기 1-2령의 사망률이 대부분을 차지하고, 온도의 상승에 따라 사망률이 높아져 32.5$^{\circ}C$에서 36%였으며, 35$^{\circ}C$에서는 1-2령의 사망률이 44%, 3-4령이 56%로 이 온도에서는 진딧물의 발육이 이루어지지 많았고, 3-4령의 사망률이 1-2령의 사망률보다 높게 나타난다. 전체약충의 온도별 발육기간을 보면 15-3$0^{\circ}C$까지 온도의 상승에 따라 발육기간이 11.5에서 4.6일로 짧아지는 경향을 보였고, 고온의 영 향을 받은 것으로 생각되는 32.5$^{\circ}C$에서는 오히려 발육기간이 5.5일로 길어졌다. 발육영 점 온도는 5.$0^{\circ}C$이였고, 유효적 산온도는 106.8일도였다. 온도별 발육율은 변형된 Sharpe와 DeMichele의 비 선형 모형 에 잘 적합되었다. 발육단계별 발육기간을 표준화하여 누적시킨 값들은 3개의 변수를 갖는 Weibull function에 적합되었다.