• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.7
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• pp.278-284
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• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.101-108
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• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

• ETRI Journal
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• v.46 no.2
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• pp.227-237
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• 2024

This study proposes a novel, conditionally applied neural network technique to reduce the overall peak-to-average power ratio (PAPR) of an orthogonal frequency division multiplexing (OFDM) system while maintaining an acceptable bit error rate (BER) level. The main purpose of the proposed scheme is to adjust only those subcarriers whose peaks exceed a given threshold. In this respect, the developed C-ANN algorithm suppresses only the peaks of the targeted subcarriers by slightly shifting the locations of their corresponding frequency samples without affecting their phase orientations. In turn, this achieves a reasonable system performance by sustaining a tolerable BER. For practical reasons and to cover a wide range of application scenarios, the threshold for the subcarrier peaks was chosen to be proportional to the saturation level of the nonlinear power amplifier used to pass the generated OFDM blocks. Consequently, the optimal values of the factor controlling the peak threshold were obtained that satisfy both reasonable PAPR reduction and acceptable BER levels. Furthermore, the proposed system does not require a recovery process at the receiver, thus making the computational process less complex. The simulation results show that the proposed system model performed satisfactorily, attaining both low PAPR and BER for specific application settings using comparatively fewer computations.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.7
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• pp.3524-3542
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• 2017

In a single-source and multi-relay amplify-forward (AF) cooperative network, the outage probability and the power allocation are two key factors to influence the performance of an entire system. In this paper, an optimized AF relay selection by an exclusive method and near optimal power allocation (NOPA) is proposed for both good outage probability and power efficiency. Given the same power at the source and the relay nodes, a threshold for selecting the relay nodes is deduced and employed to minimize the average outage probability. It mainly excludes the relay nodes with much higher thresholds over the aforementioned threshold and thus the remainders of the relay nodes participate in cooperative forwarding efficiently. So the proposed scheme can improve the utility of the resources in the cooperative multi-relay system, as well as reduce the computational complexity. In addition, based on the proposed scheme, a NOPA is also suggested to approach sub-optimal power efficiency with low complexity. Simulation results show that the proposed scheme obtains about 2.1dB and 5.8dB performance gain at outage probability of $10^{-4}$, when compared with the all-relay-forward (6 participated relays) and the single-relay-forward schemes. Furthermore, it obtains the minimum outage probability among all selective relay schemes with the same number of the relays. Meanwhile, it approaches closely to the optimal exhaustive scheme, thus reduce much complexity. Moreover, the proposed NOPA scheme achieves better outage probability than those of the equal power allocation schemes. Therefore, the proposed scheme can obtain good outage probability, low computational complexity and high power efficiency, which makes it pragmatic efficiently in the single-source and multi-relay AF based cooperative networks.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2002.04a
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• pp.106-109
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• 2002

In order to delineate the flow system of fractured hard rock aquifer, numerical experiments are conducted and the results are analyzed with Mote Carlo simulation. The results show that the percolation threshold and the effective conductivity of a fracture network can be estimated with power law exponent (a) and fracture intensity. But the dependability of the estimated value relies on the percolation threshold, the system scale, and the characterization level.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.4
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• pp.160-167
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• 2012

This paper is concerned with a particular fracture mechanics parameter ${\Delta}K_{th}$, known as the 'threshold stress intensity range', or 'fatigue threshold'. This threshold ${\Delta}K_{th}$ constitutes, as it were, a hinge between the notion of crack initiation and the notion of crack growth. It has often been thought that, like the endurance limit, it could be an intrinsic criterion of the material. The study was conducted on a SA-508 pressure vessel steel used in the nuclear power industry. This material exhibits a typical threshold effect in the range of the crack growth rates which were determined; that is, below approximately $da/dN=10^{-6}mm/cycle$, the slope of the da./dN versus ${\Delta}K$ curve is almost vertical. The value of ${\Delta}K_{th}$ was determined at a growth rate of $10^{-7}$ mm/cycle according to the ASTM Standard for threshold testing. The fatigue threshold values are in the range 21 $kg/mm^{3/2}$ to 12 $kg/mm^{3/2}$ depending on the stress ratio effect.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2287-2290
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• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Journal of the Optical Society of Korea
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• v.6 no.3
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• pp.105-107
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• 2002

We propose 'variable decision threshold technique' to decrease the power penalty induced by low-frequency tones. The proposed scheme uses a simple low-speed receiver to change the decision threshold of the optical receiver according to the low-frequency tones. We demonstrate the proposed method at 2.5 Gb/s.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.866-869
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• 2015

With the advance in semiconductor technology, the number of elements that can be integrated in system-on-chip(SoC) increases exponentially, and thus voltage scaling is indispensable to enhance energy efficiency. Near-threshold voltage computing(NTC) improves the energy efficiency by an order of degree, hence it is able to overcome the limitation of conventional super-threshold voltage computing(STC). Although NTC-based low performance manycore system can be used to maximize energy efficiency, it demands more number of cores to sustain the performance, which results in considerable increase of area. In this paper, we analyze NTC manycore architecture considering the trade-offs between performance, power, and area. Therefore, we propose an algorithmic methodology that can optimize power consumption and area while satisfying the required performance by determining the constrained number of cores and size of caches and clusters in NTC environment. Experimental results show that proposed NTC architecture can reduce power consumption by approximately 16.5 % while maintaining the performance of STC core under area constraint.