• Title/Summary/Keyword: threshold modulation

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900MHz RFID Passive Tag Frontend Design and Implementation (900MHz 대역 RFID 수동형 태그 전치부 설계 및 구현)

  • Hwang, Ji-Hun;Oh, Jong-Hwa;Kim, Hyun-Woong;Lee, Dong-Gun;Roh, Hyoung-Hwan;Seong, Yeong-Rak;Oh, Ha-Ryoung;Park, Jun-Seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.7B
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    • pp.1081-1090
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    • 2010
  • $0.18{\mu}m$ CMOS UHF RFID tag frontend is presented in this paper. Several key components are highlighted: the voltage multiplier based on the threshold voltage terminated circuit, the demodulator using current mode, and the clock generator. For standard compliance, all designed components are under the EPC Global Class-1 Generation-2 UHF RFID protocol. Backscatter modulation uses the pulse width modulation scheme. Overall performance of the proposed tag chip was verified with the evaluation board. Prototype Tag Chip dimension is neary 0.77mm2 ; According to the simulation results, the reader can successfully interrogate the tag within 1.5m. where the tag consumes the power about $71{\mu}W$.

Enhanced-TCM CODEC Development for Next Generation Terrestrial DTV Transmission System (차세대 지상파 DTV 전송시스템을 위한 Enhanced-TCM CODEC 개발)

  • Kim Sung-Hoon;Ji Kum-Ran;Lee Jae-Youn;Kim Seung-Won;Lee Soo-In;Kim Chang-Joong;Lee Ho-Kyoung
    • Journal of Broadcast Engineering
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    • v.10 no.1 s.26
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    • pp.14-21
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    • 2005
  • This paper described an Enhanced-xVSB system for improving mobile/pedestrian reception performance to the ATSC(Advanced Television System Committee) DTV 8-VSB transmission standard. E-xVSB system can transmit a mixture of normal (8-VSB) stream and enhanced (robust) stream. The robust stream has a higher threshold of visibility (TOV) compared to the standard stream, and legacy receivers ignore the robust packets. Thus, Enhanced-xVSB system is fully backward compatible with a current ATSC standard. For mobile and portable reception support, E-xVSB system adopts a reduced constellation methodas well as enhanced trellis-coded modulation scheme. E-xVSB system supports a variety of enhanced modulation schemes : Pseudo-2VSB, Enhanced-4VSB, modified Enhanced-8VSB and Hybrid-VSB. Proposed E-xVSB system performs well under serious dynamic multipath reception environment.

Selective Demodulation Scheme Based on Log-Likelihood Ratio Threshold

  • Huang, Yuheng;Dong, Yan;Jo, Minho;Liu, Yingzhuang
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.7 no.4
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    • pp.767-783
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    • 2013
  • This paper aims at designing a selective demodulation scheme based on Log-likelihood Ratio threshold (SDLT) instead of the conventional adaptive demodulation (ADM) scheme, by using rateless codes. The major difference is that the Log-likelihood ratio (LLR) threshold is identified as a key factor to control the demodulation rate, while the ADM uses decision region set (DRS) to adjust the bit rate. In the 16-QAM SDLT scheme, we deduce the decision regions over an additive white Gaussian channel, corresponding to the variation of LLR threshold and channel states. We also derived the equations to calculate demodulation rate and bit error rate (BER), which could be proven by simulation results. We present an adaptation strategy for SDLT, and compare it with ADM and adaptive modulation (AM). The simulation results show that our scheme not only significantly outperforms the ADM in terms of BER, but also achieves a performance as good as the AM scheme. Moreover, the proposed scheme can support much more rate patterns over a wide range of channel states.

Analytical Modeling for Short-Channel MOSFET I-V Characteristice Using a Linearly-Graded Depletion Edge Approximation (공핍층 폭의 선형 변화를 가정한 단채널 MOSFET I-V 특성의 해석적 모형화)

  • 심재훈;임행삼;박봉임;여정하
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.4
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    • pp.77-85
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    • 1999
  • By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

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Effects of Modulation Type on Electrically-Elicited Tactile Sensation (전기자극 변조방식이 체성감각에 미치는 영향)

  • Hwang, Sun-Hee;Ara, Jawshan;Song, Tong-Jin;Bae, Tae-Sue;Park, Sang-Hyuk;Khang, Gon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.7
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    • pp.711-716
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    • 2012
  • The purpose of this study was to investigate how the modulation method affects the effectiveness of eliciting tactile sensations by electrical stimulation. Two methods were employed and the results were compared and analyzed; pulse amplitude modulation (PAM) and pulse width modulation (PWM). Thirty-five healthy subjects participated in the experiments to measure the stimulation intensity that began to elicit a tactile sensation - activation threshold (AT). Constant-current monophasic rectangular pulse trains were employed, and the stimulation intensity was varied from zero until the subject felt any uncomfortable sensation. The step size of the stimulation intensity was 100nC/pulse. After each experiment, the subject described the sensation both quantitatively and qualitatively. The two modulation methods did not make a significant difference as far as the AT values were concerned, but most of the subjects showed 'intra-individual' consistency. Also, it was confirmed that our range of the stimulation parameters enabled us to obtain three major tactile sensations; tickling, pressure and vibration. The results suggested that the stimulation parameters and the modulation type should be selected for each individual and that selective electrical stimulation of the mechanoreceptors needs more diversified researches on the electrode design, multi-channel stimulation protocol, waveforms of the pulse train, etc.

Effects of the Irradiated Current Mode PWM Controller of DC/DC Power Converter (DC/DC 전력 컨버터의 전류모드 PWM 제어기의 방사선 영향)

  • Lho, Young-Hwan;Hwang, Eui-Sung;Lho, Kyeoung-Su;Phouphanonh, Phouphanonh;Khamphoungeun, Khamphoungeun;Han, Chang-Won
    • Proceedings of the KSR Conference
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    • 2011.10a
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    • pp.685-692
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    • 2011
  • DC/DC switching power converters produce DC output voltages from different DC input sources. The converters can be used in regenerative braking of DC motors to return energy back in the supply, resulting in energy savings for the systems containing frequent stops. The current mode DC/DC converter is composed of a PWM (pulse width modulation) controller, a MOSFET, and inductor, etc. Pulse width modulation is applied to control and regulate the total output voltage. It is shown that the variation of threshold voltage at MOSFET and the offset voltage increase caused by radiation effects make the PWM pulse unstable. In the PWM operation, the missing pulses, the changes in pulse width, and a change in the period of the output waveform are studied by simulation program with integrated circuit emphasis (SPICE) and experiments.

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An Improved SVPWM Control of Voltage Imbalance in Capacitors of a Single-Phase Multilevel Inverter

  • Ramirez, Fernando Arturo;Arjona, Marco A.
    • Journal of Power Electronics
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    • v.15 no.5
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    • pp.1235-1243
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    • 2015
  • This paper presents a modified Space Vector Pulse Width Modulation Technique (SVPWM), which solves the well-known problem of voltage imbalance in the capacitors of a single-phase multilevel inverter. The proposed solution is based on the measurement of DC voltage levels at each capacitor of the inverter DC bus. The measurements are then used to adjust the size of the active vectors within the SVPWM algorithm to keep the voltage waveform sinusoidal regardless of any voltage imbalance on the DC link capacitors. When a voltage deviation exceeds a predetermined hysteresis band, the correspondent voltage vector is restricted to restore the voltage level to an acceptable threshold. Hence, the need for external voltage regulators for the voltage capacitors is eliminated. The functionality of the proposed algorithm is successfully demonstrated through simulations and experiments on a grid tied application.

A Study on Techniques for the Reduction of SRTS Jitter and Pointer Adjustment Jitter (SRTS 지터와 포인터 조정 지터의 감소 방식에 관한 연구)

  • Choi, Seung-Kuk
    • The KIPS Transactions:PartC
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    • v.10C no.4
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    • pp.455-462
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    • 2003
  • Techniques for the reduction of SRTS jitter and pointer adjustment jitter are studied. To reduce the stuffing jitter several methods have been proposed, such as bit leaking, stuff threshold modulation and sigma delta modulation. The characteristics of jitter generated in SRTS and pointer adjustment systen implementing these reduction techniques is analyzed with computer simulation. The results show that ms jitter value decreases to less than 50% as compared to a conventional pointer adjustment system. The amplitude of SRTS jitter using new techniques decreases or Increases dependent on system parameter.

1 Bit/Pixel Modulation Codes for Multi-Level Holographic Data Storage System (멀티레벨 홀로그래픽 데이터 저장장치를 위한 1비트/픽셀 변조부호)

  • Jeong, Seongkwon;Lee, Jaejin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.40 no.9
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    • pp.1667-1671
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    • 2015
  • Multi-level holographic data storage is a candidate for the next generation data storage system, since it can store more than one bit per pixel. It is possible to increase the number of codewords if the number of levels is increased, and the code with an appropriate selection of codewords can also increase the minimum distance. In this paper, we propose three multi-level modulation codes of the code rate 1 bit/pixel and compare the performance according to the minimum distance. The result shows that the code with small number of levels is better than that of large number of levels because it is hard to detect threshold value.

Gold-Doped Double Injection Magnetic Sensor (금을 도우핑한 이중 주입 자기 센서)

  • Min, Nam-Ki;Lee, Seong-Jae;Henderson, H.T.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1248-1251
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    • 1995
  • This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.

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