• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.115-127
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.289-294
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.361-369
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• 2005

InP(100) crystal surface was irradiated by ion beams with low energy $(180\~225\;eV)$ and high flux $(\~10^{15}/cm^2/s)$, Self-organization process induced by ion beam was investigated by examining nano structures formed during ion beam sputtering. As an ion source, an electrostatic closed electron Hall drift thruster with a broad beam size was used. While the incident angle $(\theta)$, ion flux (J), and ion fluence $(\phi)$ were changed and InP crystal was rotated, cone-like, ripple, and anistropic nanostrucuture formed on the surface were analyzed by an atomic force microscope. The wavelength of the ripple is about 40 nm smaller than ever reported values and depends on the ion flux as $\lambda{\propto}J^{-1/2}$, which is coincident with the B-H model. As the incident angle is varied, the root mean square of the surface roughness slightly increases up to the critical angle but suddenly decreases due to the decrease of sputtering yield. By the rotation of the sample, the formation of nano dots with the size of $95\~260\;nm$ is clearly observed.

• Journal of Adhesion and Interface
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• v.9 no.4
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• pp.30-33
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• 2008

Two polymeric interfaces with single component homo-polymers were prepared to control the orientation of block copolymer thin-film nanostructures. Poly(4-acetoxy styrene) (OH-PAS) and poly(4-methoxy styrene) (OH-PMS) which have the average chemical composition of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) were precisely synthesized through nitroxide-mediated radical polymerization. After dehydration reactions between above polymers and SiOx layers of silicon wafers, the polymer-modified interface induced partial (30%) vertical orientation of PS-b-PMMA thin film in the case of OH-PMS and wholly parallel orientation in the case of OH-PAS. Chemical compositions of polymeric interface layers are regarded as the key parameter to control the orientation of nanostructures of block copolymer thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.297.2-297.2
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• 2016

Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

• Korean Journal of Crystallography
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• v.15 no.1
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• pp.18-23
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• 2004

In order to find the optical properties of CdSe thin film and CdSe nanostructure, the following experiments were performed: the CdSe wurtzite nanostructure was made by using 99.99% CdSe (Aldrich) powder with the $SiO_x$ substrates and the $AlO_x$ membranes in $7{\times}10^{-6}$ torr vacuum. (The average vacuum coating speed being 1 ${\AA}$/sec). The calculations obtained were about 200 nm diameter of nanotubes on the $AlO_x$ membranes and a crystallite size of about 2 nm on the $SiO_x$ substrates. These results were verified through the Scanning Electron Microscopy (SEM) analysis, thin film X-ray diffraction analysis and emission spectroscopy.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.814-817
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• 2010

AAO thin films prepared by a two-step anodization process have pores that are uniform in diameter, highly ordered, and perfectly vertical with respect to the plane of the nano template. Further, the pore size and interpore distance can be easily controlled by varying the anodizing voltage and acid electrolyte. When metals are electrochemically deposited in the pores, metal nanowires that are highly ordered and uniform in diameter are formed in each pore.

• Corrosion Science and Technology
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• v.18 no.6
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• pp.228-231
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• 2019

Aluminum and its alloys have been widely used in various fields because of low weight, high strength, good conductivity, and low price. It is well known that aluminum alloys that cause natural oxide film can inhibit corrosion in wet, salty environments. However, these oxides are so thin that corrosion occurs in a variety of environments. To prevent this problem, an electrochemical anodizing technique was applied to the aluminum alloy surface to form a thick layer of oxide and a unique oxide shape, such as a hierarchical pore structure simultaneously combining large and small pores. The shape of the structures was implemented using stepwise anodization voltages such as 40 V for mild anodizing and 80 V for hard anodizing, respectively. To maximize water repellency, it is crucial to the role of surface structures shape. And a hydrophobic thin film was coated by 1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane (FDTS) to minimize surface energy of the structure surface. Thus, such nanoengineered superhydrophobic surface exhibited a high water contact angle and excellent corrosion resistance such as low corrosion current density and inhibition efficiency.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.