• Title/Summary/Keyword: thin-cathode

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Observation of Plasma Shape by Continuous dc and Pulsed dc (직류 방전과 펄스 직류 방전에 의한 플라즈마 형상 관찰)

  • Yang, Won-Kyun;Joo, Jung-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.42 no.3
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    • pp.133-138
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    • 2009
  • Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.

Fabrication and Characterization of Yellow OLED using GDI602:Rubrene(10%) Material (GDI 602/Rubrene을 이용한 황색 OLED의 제작과 특성 분석)

  • Jang, Ji-Geun;Kim, Hee-Won
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.71-75
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    • 2006
  • The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.

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Improved Uniformity in Resistive Switching Characteristics of GeSe Thin Film by Ag Nanocrystals

  • Park, Ye-Na;Shin, Tae-Jun;Lee, Hyun-Jin;Lee, Ji-Soo;Jeong, Yong-Ki;Ahn, So-Hyun;Lee, On-You;Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.237.2-237.2
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    • 2013
  • ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

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Design and Fabrication of Sputter Coating System for Ophthalmic Lens (안경렌즈코팅용 소형 Sputter Coating System 설계 및 제작에 관한 연구)

  • Park, Moonchan;Jung, Boo Young;Kim, Eung Sun;Lee, Jong Geun;Joo, Kyung Bok;Moon, Hee Sung
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.1
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    • pp.53-58
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    • 2008
  • Purpose: To design and fabricate the small sputter coating system for the Ophthalmic lens. Methods: The design of sputter target was done using macleod program for AR coating and mirror coating of Ophthalmic lens with Si target and then the sputter system was fabricated. Results: The optimum condition of AR coating with Si target was [air|$SiO_2$(81.3)|$Si_3N_4$ (102)|$SiO_2$(19.21)|$Si_3N_4$(15.95)|$SiO_2$(102)|glass], for blue color mirror coating [air|$SiO_2$(56.61)|$Si_3N_4$(135.86)|$SiO_2$(67.64)|$Si_3N_4$(55.4)|$SiO_2$(53.53)|$Si_3N_4$(51.28)|glass], for green color coating [air|$SiO_2$(66.2)|$Si_3N_4$(22.76)|$SiO_2$(56.58)|$Si_3N_4$(140.35)|$SiO_2$(152.35)|$Si_3N_4$(70.16)|$SiO_2$(121.87)|glass], for gold color [air|$SiO_2$(83.59)|$Si_3N_4$(144.86)|$SiO_2$(11.82)|$Si_3N_4$(129.93)|$SiO_2$(90.01)|$Si_3N_4$(88.37)|glass]. Conclusions: In the fabrication of sputtering coating apparatus, Dual cathode with same Ti target were coated at the same time on both sides of Ophthalmic lens to lessen the time of coating on Ophthalmic Lens and save the cost of the lens. The distance of target-substrate of cathode was variable from 12.5 cm to 20 cm. Turbo pump was used to take the whole coating process about 15 min. instead of diffusion pump. The lens holder was made to coat 2 pairs lens every coating and was rotated to get the uniformity of thin film.

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Adhesion Layer 사용으로 인한 Si Thin Film Anode 전극의 신뢰성 향상

  • O, Min-Seop;Song, Yeong-Hak;U, Chang-Su;Jeong, Jun-Ho;Hyeon, Seung-Min;Lee, Hu-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.681-682
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    • 2013
  • 전기는 우리 주변의 에너지 형태 중에서 가장 편리하고 광범위하게 사용되고 있다. 이러한 전기는 전자제품, 전기자동차, 에너지 저장 플랜트 등 매우 많은 분야에서 저장되고 사용되고 있다. 특히 에너지 저장 용량의 확대는 휴대폰, 노트북 PC 등 휴대용 IT 기기의 성장에 결정적인 역할을 하였다. 가볍고 작으면서도 고용량의 전기 에너지 저장 장치가 없었다면, 통신이나 인터넷 그리고 오락 등 다양한 기능을 작은 휴대용 기기에 구현할 수 없었을 것이다. 그러나 시간이 흐를수록 기기의 요구 성능이 높아지고 소비자의 니즈가 더욱더 다양해지고 고도화될수록 단일 부품으로 가장 큰 부피를 차지하는 에너지 저장 장치의 용량과 디자인은 점점 중요해지고 있다. 이러한 에너지 저장 장치에서 가장 친숙한 형태는 2차 전지 계열이다. 납 축전지를 비롯하여, 니켈수소, 니켈카드뮴, electrochemical capacitor와 Li ion 계열 등이 대표적이다. 특히 Li ion 배터리는 모바일, 자동차 및 에너지 저장 그리드 등과 같은 다양한 분야에 가장 많이 적용되고있다. Li ion 배터리에 대하여 현재의 핵심적인 연구분야는 전극 재료(cathode, anode)와 electrolyte에 대한 것이다. Anode 전극 재료 중에서 가장 많이 사용되는 재료는 카본을 기반으로 하는 재료로 안정성에 대한 장점이 있지만 에너지 밀도가 낮다는 단점이 있다. 에너지 저장 용량 증가에 대한 필요성이 증가하기 때문에 현재 많이 사용되고 있는 에너지 밀도가 낮은 카본 재료를 대체하기 위해서 이론 용량이 높다고 알려진 실리콘과 같은 메탈이나 주석 산화물과 같은 천이 금속 산화물에 대하여 많은 연구가 진행되고 있다. 특히 현재까지 알려진 많은 재료 중에서 가장 큰 capacity (~4,000 mAh/g)를 가지고 있다고 알려진 실리콘이 카본의 대체 재료로 많은 연구가 진행되고 있다. 그러나, Li 과 반응을 하며 약 300~400%에 달하는 부피팽창이 발생하고, 이러한 부피 팽창 때문에 충 방전이 진행됨에 따라 current collector로부터 박리되는 현상을 보여 빠른 용량 감소를 보여주고 있다. 본 연구에서는 adhesion layer를 current collector와 실리콘 전극 재료 사이에 삽입하여 충 방전 시 부피팽창에 의한 미세구조의 변화와 electrochemical 특성에 대한 영향을 알아보았다. 실험에 사용한 anode 전극은 상용 Cu foil current collector에 RF/DC magnetron 스퍼터링을 통해 다양한 종류(Ti, Ta 등)의 adhesion layer과 200 nm 두께의 Si 박막을 증착하였다. 또한 Bio-logic Potentiostat/ Galvanostat VMP3 와 WanAtech automatic battery cycler 장비를 사용하여 0.2 C-rate로 half-cell 타입의 코인 셀로 조립한 전극에 대한 충 방전 실험을 진행하였다. Adhesion layer의 사용으로 인해 실리콘 박막과 Cu current collector 사이의 박리 현상을 줄여줄 수 있었고, 충 방전 시 Cu 원자의 실리콘 박막으로의 확산을 통한 brittle한 Cu-Si alloy 형성을 막아 줄 수 있어 큰 특성 향상을 확인할 수 있었다. 또한, 리튬과 실리콘의 반응을 통한 형태와 미세구조 변화를 SEM, TEM 등의 다양한 장비를 사용하여 확인하였고, 이를 통해 adhesion layer의 사용이 전극의 특성향상에 큰 영향을 끼쳤다는 것을 확인할 수 있었다.

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The Fabrication of HCD Ion Plating Apparatus and XPS Analysis on the Fine Color Changes of TiN Films on Stainless Steel (HCD 이온플레이팅 장치 제작 및 Stainless Steel 위에 TiN 박막의 미세색상변화에 따른 XPS분석)

  • Park, Moon Chan;Lee, Jong Geun;Choi, Kwang Ho;Cha, Jung Won;Kim, Eung Soon;Park, Jin Hong
    • Journal of Korean Ophthalmic Optics Society
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    • v.15 no.4
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    • pp.361-366
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    • 2010
  • Purpose: HCD ion plating apparatus by hollow cathod discharge method was fabricated and TiN films were deposited on stainless steel by this apparatus with increasing in $N_2$ gas flow and the fine color changes of TiN films were analyzed. Methods: The spectroradiometer and spectrophotometer were used to observe optically the fine color changes of TiN thin films, and XPS was used to analyze the compositions of TiN thin films with increasing in $N_2$ gas flow. Results: The color coordinate of TiN thin film with $N_2$ 120 sccm gas flow showed (0.382, 0.372) which had the mixed colors of gold and silver, and the color coordinate changed to the increasing value of (x,y) with increasing in $N_2$ gas flow which indicated the deep gold color. It was found that the slopes of the reflectances at 550nm were increased with increasing in $N_2$ gas flow. And from the Ti scans using XPS, it was found that the peak heights of 455 eV derived from TiN composition were increased with increasing in $N_2$ gas flow, while the peak heights of 459 eV from $TiO_2$ composition were decreased. Conclusions: The results obtained above were that the color of TiN film with 120 sccm $N_2$ gas flow had been observed from the mixed color of silver and gold due to TiC, $N_2$, TiN on the surface and TiN, $N_2$ inside film, and the color of TiN films changed a deep gold color with increasing in $N_2$ gas flow due to increasing TiN composition.

Fabrication and Performance of Anode-Supported Flat Tubular Solid Oxide Fuel Cell Unit Bundle (연료극 지지체식 평관형 고체산화물 연료전지 단위 번들의 제조 및 성능)

  • Lim, Tak-Hyoung;Kim, Gwan-Yeong;Park, Jae-Layng;Lee, Seung-Bok;Shin, Dong-Ryul;Song, Rak-Hyun
    • Journal of the Korean Electrochemical Society
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    • v.10 no.4
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    • pp.283-287
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    • 2007
  • KIER has been developing the anode-supported flat tubular solid oxide fuel cell unit bundle for the intermediate temperature($700{\sim}800^{\circ}C$) operation. Anode-supported flat tubular cells have Ni/YSZ cermet anode support, 8 moi.% $Y_2O_3$ stabilized $ZrO_2(YSZ)$ thin electrolyte, and cathode multi-layer composed of Sr-doped $LaSrMnO_3(LSM)$, LSM-YSZ composite, and $LaSrCoFeO_3(LSCF)$. The prepared anode-supported flat tubular cell was joined with ferritic stainless steel cap by induction brazing process. Current collection for the cathode was achieved by winding Ag wire and $La_{0.6}Sr_{0.4}CoO_3(LSCo)$ paste, while current collection for the anode was achieved by using Ni wire and felt. For making stack, the prepared anode-supported flat tubular cells with effective electrode area of $90\;cm^2$ connected in series with 12 unit bundles, in which unit bundle consists of two cells connected in parallel. The performance of unit bundle in 3% humidified $H_2$ and air at $800^{\circ}C$ shows maximum power density of $0.39\;W/cm^2$ (@ 0.7V). Through these experiments, we obtained basic technology of the anode-supported flat tubular cell and established the proprietary concept of the anode-supported flat tubular cell unit bundle.

Study on Low-Temperature Solid Oxide Fuel Cells Using Y-Doped BaZrO3 (Y-doped BaZrO3을 이용한 저온형 박막 연료전지 연구)

  • Chang, Ik-Whang;Ji, Sang-Hoon;Paek, Jun-Yeol;Lee, Yoon-Ho;Park, Tae-Hyun;Cha, Suk-Won
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.9
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    • pp.931-935
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    • 2012
  • In this study, we fabricate and investigate low-temperature solid oxide fuel cells with a ceramic substrate/porous metal/ceramic/porous metal structure. To realize low-temperature operation in solid oxide fuel cells, the membrane should be fabricated to have a thickness of the order of a few hundreds nanometers to minimize IR loss. Yttrium-doped barium zirconate (BYZ), a proton conductor, was used as the electrolyte. We deposited a 350-nm-thick Pt (anode) layer on a porous substrate by sputter deposition. We also deposited a 1-${\mu}m$-thick BYZ layer on the Pt anode using pulsed laser deposition (PLD). Finally, we deposited a 200-nm-thick Pt (cathode) layer on the BYZ electrolyte by sputter deposition. The open circuit voltage (OCV) is 0.806 V, and the maximum power density is 11.9 mW/$cm^2$ at $350^{\circ}C$. Even though a fully dense electrolyte is deposited via PLD, a cross-sectional transmission electron microscopy (TEM) image reveals many voids and defects.

Fabrication and Characterization of High Performance Green OLEDs using $Alq_3$-C545T Systems ($Alq_3$-C545T시스템을 이용한 고성능 녹색 유기발광다이오드의 제작과 특성 평가)

  • Jang Ji-Geun;Kim Hee-Won;Shin Se-Jin;Kang Eui-Jung;Ahn Jong-Myong;Lim Yong-Gyu
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.1 s.38
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    • pp.51-55
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    • 2006
  • The green emitting high performance OLEDs using the $Alq_3$-C545T fluorescent system have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, green color emission layer was deposited using $Alq_3$ as a host material and C-545T[10-(2-benzothiazolyl)-1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]/benzopyrano[6,7,8-ij]-quinolizin-11-one] as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:C545T/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Green OLEDs fabricated in our experiments showed the color coordinate of CIE(0.29, 0.65) and the maximum power efficiency of 7.3 lm/W at 12 V with the peak emission wavelength of 521 nm.

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TiO2 Nanotubular Formation on Grade II Pure Titanium by Short Anodization Processing (Grade II 순수 타이타늄의 단시간 양극산화에 의한 TiO2 나노튜브 형성)

  • Lee, Kwangmin;Kim, Yongjae;Kang, Kyungho;Yoon, Duhyeon;Rho, Sanghyun;Kang, Seokil;Yoo, Daeheung;Lim, Hyunpil;Yun, Kwiduk;Park, Sangwon;Kim, Hyun Seung
    • Korean Journal of Materials Research
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    • v.23 no.4
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    • pp.240-245
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    • 2013
  • Electrochemical surface treatment is commonly used to form a thin, rough, and porous oxidation layer on the surface of titanium. The purpose of this study was to investigate the formation of nanotubular titanium oxide arrays during short anodization processing. The specimen used in this study was 99.9% pure cp-Ti (ASTM Grade II) in the form of a disc with diameter of 15 mm and a thickness of 1 mm. A DC power supplier was used with the anodizing apparatus, and the titanium specimen and the platinum plate ($3mm{\times}4mm{\times}0.1mm$) were connected to an anode and cathode, respectively. The progressive formation of $TiO_2$ nanotubes was observed with FE-SEM (Field Emission Scanning Electron Microscopy). Highly ordered $TiO_2$ nanotubes were formed at a potential of 20 V in a solution of 1M $H_3PO_4$ + 1.5 wt.% HF for 10 minutes, corresponding with steady state processing. The diameters and the closed ends of $TiO_2$ nanotubes measured at a value of 50 cumulative percent were 100 nm and 120 nm, respectively. The $TiO_2$ nanotubes had lengths of 500 nm. As the anodization processing reached 10 minutes, the frequency distribution for the diameters and the closed ends of the $TiO_2$ nanotubes was gradually reduced. Short anodization processing for $TiO_2$ nanotubes of within 10 minutes was established.