• Journal of Information Display
• /
• v.6 no.1
• /
• pp.28-32
• /
• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.893-896
• /
• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.988-990
• /
• 2003

기존의 FED 용 MIM cathode 에 쓰이는 다층금속상부 전극을 열처리하였을 때 생기는 문제점에 대하여 살펴보았다. 먼저 열처리 후에 상부전극자체가 열변형이 일어나면서 나타나는 비저항의 증가, 표면 형상의 악화 등이 문제점으로 나타났고, 여기에 하부전극의 변형이 이러한 현상을 더욱 악화시키는 것을 확인할 수 있었다. 특히, 상부전극의 경우 그 두께가 극히 얇아 열변형이 매우 취약한 탓에 대체 물질의 개발이 시급하였다. 산화물전극은 열변형에 대해 매우 안정하여 열처리 후, 비저항이나 표면 형상의 변화가 적으며, 얇은 두께에서도 균일하게 박막이 형성되어 그 특성이 다층금속전극에 비해 매우 뛰어남을 확인하였다.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.139-145
• /
• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.13 no.2
• /
• pp.89-93
• /
• 2014

Variable polarity (VP) arc welding is known as an effective solution for aluminum thanks to the cleaning effect, which means oxide removal, during the DCEP (direct current electrode positive) period. In this research, VP GTAW (gas tungsten arc welding) is adopted for lap joint fillet welding of 3mm thickness 5052 aluminum alloy. Various welding currents and DCEP duty cycles are applied as welding conditions with a fixed welding speed to investigate the influence of DCEP characteristics on weld bead formation. Results show a tendency of higher heat input for higher DCEP duty cycle, which result does not follow conventional arc theory because it is known that DCEN (DC electrode negative) polarity is more efficient for heat input than is DCEP. This phenomenonhas recently been reported by several VP-GTA researchers and is still controversial because the mechanism of oxide removal is not yet clear except for the previous, well-known idea of "ion bombardment", which cannot explain the situation. Finally, proper usage conditions for VP-GTAW are suggested; then, further, related theoretical topics in the field of cathode physics are brieflyintroduced.

• Journal of Sensor Science and Technology
• /
• v.17 no.1
• /
• pp.9-14
• /
• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.169-169
• /
• 2014

Interfacial electronic structure of bathocuproine and Al was investigated using in-situ photoemission spectroscopy and density functional theory (DFT) calculations. Bathocuproine is used for exciton blocking and electron transport material in organic photovoltaics and Al is typical cathode material. When thin thickness of Al was thermally evaporated on BCP, gap states were observed by ultraviolet photoemission spectroscopy. The closest gap state yielded below 0.3 eV from Fermi level. By x-ray photoemission spectroscopy, interaction of Al with nitrogen of BCP was observed. To understand the origin of gap states, DFT calculation was carried out and gap states was verified with successive calculation of interaction of Al and nitrogen of BCP. Furthermore, emergency of another state above Fermi level was observed. Remarkable reduction of electron injection barrier between Al and BCP, therefore, is possible.

• Membrane Journal
• /
• v.30 no.5
• /
• pp.350-358
• /
• 2020

A membrane capacitive deionization (MCDI) cell is constructed by applying thin layer of a cation exchange membrane (Nafion) on cathode and an anion exchange membrane (aminated polyphenylene oxide, APPO) on anode. Compared to CDI cell without CEM and AEM coating, MCDI exhibits enhanced salt removal efficiency. When Nafion and APPO are used as CEM and AEM, optimized salt removal performance as high as 82.1% is observed when 1.2 V is applied for 3 min during absorption process and -1.0 V is applied for 1 min during desorption.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.586-586
• /
• 2012

The vuv spectrometer for ITER main plasma measurement is designed as a five-channel spectral system. To develop and verify the design, a two-channel prototype system was fabricated with No. 3 (14.4-31.8 nm) and No. 4 (29.0-60.0 nm) among the five channels. For test of the prototype system, a hollow cathode lamp is used as a light source. The system is composed of a collimating mirror to collect the light from source to slit, and two holographic diffraction gratings with toroidal geometry to diffract and also to collimate the light from the common slit to detectors. The overall system performance was verified by comparing the measured spectral resolutions with the calculated spectral resolutions. And we also have developed liquid jet target system. This study is about a neutron generator, which is designed to overcome many of the limitations of traditional beam-target neutron generators by utilizing a liquid target. One of the most critical aspects of the beam-target neutron generator is the target integrity under the beam exposure. A liquid target can be a good solution to overcome damage to the target such as target erosion and depletion of hydrogen isotopes in the active layer, especially for the ones operating at high neutron fluxes and maintained relatively thin with no need for water cooling. In this study, liquid target containing hydrogen has been developed and tested.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.430-430
• /
• 2012

Modulated pulsed power (MPP) 스퍼터링은 펄스 전압 shape, amplitude, duration의 modulation을 통해 증착율 손실을 극복하는 고출력 펄스 마그네트론 스퍼터링의 한 종류이다. Micro second 범위에서 on/off 시간을 다중 세트 형태로 자유롭게 프로그램 할 수 있어서 아킹 없이 고전류 영역의 마그네트론 동작을 할 수 있으므로, 고주파 유도 결합 플라즈마원이나 마이크로웨이브 투입 등의 부가적인 플라즈마 없이도 스퍼터링 재료의 이온화 정도를 획기적으로 높일 수 있는 장점을 가지고 있다. 본 연구에서는 $2{\times}1{\times}0.2$의 sputtering system에서 기판 캐리어를 이용해서 $400{\times}400mm$ 기판을 $272{\times}500mm$ 크기의 AZO target (Al 2 wt%)이 설치되어 있는 moving magnet cathode (MMC)을 이용하여 MPP로 증착했다. 두 종류의 micro pulse set을 하나의 macro pulse에 사용함으로서 weakly ionized plasma와 strongly ionized plasma를 만들 수 있다. 다양한 micro pulse set을 이용하여 평균 전력 2 kW에서 peak 전력을 4 kW에서 45 kW까지 상승 시킬 수 있으며, 이 때 타겟-기판 거리 80 mm에서 이온전류밀도는 $5mA/cm^2$에서 $20mA/cm^2$까지 상승했다. MPP는 같은 평균 전력에서 repetition frequency가 증가할 때, 증착 속도가 증가했으며, 같은 repetition frequency에서 macro pulse length가 증가할 때도, 증착 속도가 증가했다. 최적화된 marco, micro pulse set에서 증착 속도는 평균 전력 2 kW에서 110 nm/min이었고, 700 nm의 박막에서 비저항은 $1-2{\times}10^{-3}ohm{\cdot}cm$였다. 표면거칠기 Rrms는 약 3 nm였고, 400-700 nm 영역의 평균 투과도는 72-76%였다.