• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.91-98
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• 2010

The increasing of power and processing speed and miniaturization of central processor unit (CPU) used in electronics equipment requires better performing thermal management systems. A typical thermal management package consists of thermal interfaces, heat dissipaters, and external cooling systems. There have been a number of experimental techniques and procedures for estimating thermal conductivity of thin, compressible thermal interface material (TIM). The TIM performance is affected by many factors and thus TIM should be evaluated under specified application conditions. In compact packaging of electronic equipment the chip is interfaced with a thin heat spreader. As the package is made thinner, the coupling between heat flow through TIM and that in the heat spreader becomes stronger. Thus, a TIM characterization system for considering the heat spreader effect is proposed and demonstrated in detail in this paper. The TIM test apparatus developed based on ASTM D-5470 standard for thermal interface resistance measurement of high performance TIM, including the precise measurement of changes in in-situ materials thickness. Thermal impedances are measured and compared for different directions of heat dissipation. The measurement of the TIM under the practical conditions can thus be used as the thermal criteria for the TIM selection.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.17-20
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• 2003

The EMC's rheological effects on molding process are evaluated in this study. When considering mold processing for IC packages, the major concerning items in current studies are incomplete fill, severe wire sweeping and paddle shifts etc. To simulate EMC's fast curing rheokinetics with 3D mold flow behavior, one should select appropriate rheometry which characterize each EMC's rheological motion and finding empirical parameters for numerical analysis current studies present the new rheometry with parallel plate rheometry for reactive rheokinetic experiments, the experiment and numerical analysis is done with the commercial higher filler loaded EMC for the case of Thin Quad Plant Packages (TQFP) with package thickness below 1.0 mm. The experimental results and simulation results based on new rheometry matches well in point of the prediction of wire sweep, filling behavior of melt front advancement and void trapping position.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.478-480
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• 2004

다이아몬드 톱날을 이용한 얇은 Si 웨이퍼의 기계적인 다이싱은 chipping, crack 등의 문제점을 발생시킨다. 또한 stacked die 나 multi-chip등과 같은 3D-WLP(wafer level package)에서 via를 생성하기 위해 현재 사용되는 화학적 etching은 공정속도가 느리고 제어가 힘들며, 공정이 복잡하다는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해 현재 연구되고 있는 분야가 레이저를 이용한 웨이퍼 다이싱 및 드릴링이다. 본 논문에서는 UV 레이저를 이용한 얇은 Si 웨이퍼 다이싱 및 드릴링 시스템에 대해 소개하고, 웨이퍼 다이싱 및 드릴링 실험결과를 바탕으로 적절한 레이저 및 공정 매개변수에 대해 설명한다.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.438-443
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• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.18-18
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• 2013

A FeRh alloy is a well-known efficient magnetocaloric material and some experimental and theoretical studies of bulk FeRh have been reported already by several groups. In this study we report first-principles calculations on magnetic properties of different thickness FeRh thin films in order to investigate the possibility to enhance further the magnetocaloric efficiency. We used Vienna Ab-initio Simulation Package (VASP) code. We found that the FeRh thin films have quite different magnetic properties from the bulk when the thickness is thinner than 6-atomic-layers. While bulk FeRh has a G-type antiferromagnetic (AFM) state, thin films which are thinner than 6-atomic-layers have an A-type AFM state or a ferromagnetic(FM) state. We will discuss possibility of magnetic phase transitions of the FeRh thin films in the view point of a magnetocaloric effect. And we found 4-, 5-, 6-layers films with Fe surface and 7-layers film with Rh surface are FM and they have dozens eV magnetocrystalline anisotropy (MCA) energy. MCA energy leads to determine energy barrier when magnetic states are changed by external magnetic field.

• Journal of the Korean institute of surface engineering
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• v.56 no.1
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• pp.77-83
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• 2023

The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.1
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• pp.8-13
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• 2020

Stress is the main cause of warpage failure of very thin substrates with thickness of several hundred ㎛, such as IC packages. Stress usually results from differences in crystal structures and corresponding thermal expansion coefficients when depositing different substances on a substrate. In this study, the behaviors of stress occurring in substrates were numerically analyzed by the thin-film pattern of the rectangles stacked on the substrates. First, the substrate displacement was obtained and the substrate strain and stress were obtained using it. When the tensile force is concentrated at the edge of the thin film pattern, normal and shear stresses are generated around the edge of the thin film pattern. Normal stress occurs near the edges of the thin film pattern and the vertexes. Shear stress also occurs around the edge of the thin film pattern, but unlike normal stress, it does not appear near the vertexes. It was also confirmed that the magnitude and direction of shear stress are changed around the edge. When edge forces of thin-film pattern are equal, the normal stress was about 10 times larger than the shear stress. This indicates that normal stress is the biggest cause of warpage failure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.15-18
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• 2007

As the line width of the pattern become thin more and more, the accuracy of ultra-precision stage should be increased. Various type stages have been developed and used in fabrication phase and inspection lab. Furthermore the line with become several tens of nanometer recently. We need ultra high precision stage. In this paper a new type stage is proposed in order to reduce the deformation of working table. The table is supported by several flexure hinges and actuated by a PZT. The local deformation is analyzed and the vibratory motion is also examined by FEM package.