• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.7-12
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• 1985

The transmittances of active metal(Al), transition metals (Cr, Ti, Mn, Ni), and nobel metal(Cu) thin films were investigated. At the pressure range of $6{\times}10^{-5}$ mbr and evapora-tion rate of 0.5 -2A/sec, the metals were evaporated with $85{\AA}$ thickness or so on the slide G1ass. We found that the evaporation rates and vacuum levels strongly influence on the optical properties of thin metal films by the reaction with oxygen. Especially, the transmittances of the metals (Al, Cr, Ti, Mn, Ni) with strong oxygen affinity were able to be enhanced by the evaporating processes of low vacuum level or low evaporating rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.126-126
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• 2012

In past decades, the themal inkjet (TIJ) printer has been widely used as one of the most well-known digital printing technology due to its low cost, and high printing quality. Since the printing speed of TIJ printers are much slower than that of laser printers, however, there has been intensive efforts to raise the printing speed of TIJ printers. One of the most plausible methods to raise the printing speed of TIJ printers is to adopt a page-wide array TIJ printhead. To accomplish this goal, the high efficiency inkjet heating resistor films should be developed to settle the high power consumption problem of a page-wide array TIJ printhead. In this study, we investigated noble metal based multicomponent thin film resistor films prepared by atomic layer deposition (ALD) for a high efficiency inkjet printhead. Design concept, preparation, material properties of noble metal based multicomponent thin films will be discussed in terms of mutlfunctionality.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1372-1374
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure sensor consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097 $\sim$ 1.21 mV/V kgf/$cm^2$ in the temperature range of 25 $\sim$ $200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.166-171
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• 2007

In this paper Research development about a micro metal forming manufacturing system has been developed. A micro forming system has been achieved in Japan and it's developed micro press is limited to single forming process. To coincide with the purpose to be more practical, research and development is necessary about the press which the multi forming process is possible. We set the development of the equipment including micro deep drawing, micro punching and micro restriking process to the goal. To achieve this goal, we set the application product to a micro thin foil valve which is used in the micro pump module. The compound die set has been designed and manufactured to make two step process. The material of thin foil valve is SUS-304 and its thickness is 50$\mu$m. We can get a good forming results from micro punching experiments in this paper.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.791-798
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• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• Journal of Surface Science and Engineering
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• v.43 no.5
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• pp.243-247
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• 2010

The micro Vickers hardness and internal stress of Ni-Fe metal thin film synthesized by electrodeposition method at $25^{\circ}C$ were studied as a function of bath composition, and surface microstructure and atomic compositions of thin films were investigated by SEM and EDS. And the shape change of $200\;{\AA}$ Ni-Fe nanowires made using anodic aluminum oxide(AAO) templates by electrodeposition method were observed by SEM as a function of ultrasonic treatment time and bath composition. The Fe deposition contents on the substrate non-linearly increased with Fe ion concentration over total metal ion concentration. In case of low Fe contents film, the grain size is smaller and denser than high Fe contents deposited films, and the micro Vickers hardness increased with Fe contents of electrodeposited films. These results affected the shape change of nanowire after ultrasonic treatments.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Journal of Welding and Joining
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• v.25 no.5
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• pp.72-77
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• 2007

Prediction and control of the thermal distortion is particularly important for the design and manufacture of welded thin metal structure. In this study, numerical computations are performed to analyze effect of structure section shape and weld line location on distortion. In addition, this study aims to develop a thermal elasto-plastic simulation using finite element method to predict distortion, with particular emphasis on bending deformation generated in outline welding of a thin box structure. From the numerical analysis, it was revealed that the section shape and weld line location play an important role on the welding distortion. Among 3 types of section shape design proposed in this study, the least deformation remained in the two path welded structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.253-257
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as large-area flat pan디 display. In this study, current-voltage (I-V) characteristics of MEH-PPV thin films was investigated using various metal as a top electrode, where MEH-PPV thin films were prepared on 170 substrate by spin coating method and various metal such as Al, Ag, In, MgIn was deposited on MEH-PPV thin films as a top electrode.