• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.461-463
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• 2009

We report on the fabrication of ZnO-based thin-film transistor (TFT) inverters with top and bottom gate structures with $Al_2O_3$ dielectrics grown by atomic layer deposition (ALD). Since the top gate ZnO-based TFT showed somewhat lower field effect mobility than that of the bottom gate device, our ZnO-based TFT inverters were designed with identical dimensions for both channels. This TFT inverter device demonstrated an high voltage gain at a low supply voltage of 5 V and clear dynamic behavior.

• 통합자연과학논문집
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• 제3권3호
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.58-58
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• 2010

Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

• Structural Engineering and Mechanics
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• 제2권3호
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• pp.269-284
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• 1994

The analysis and tests of thin-walled channel frames including nonlinear flexible or semi-rigid connection behaviour is presented. The semi-rigid connection behaviour is modelled using a mathematical approximation of the connection flexibility-moment relationship. Local instability such as local buckling and torsional flexural buckling of the member are included in the analysis. The full response of the frame, up to the collapse load, can be predicted. Experimental investigation was carried out on a series of simple double storey symmetrical frames with the purpose of verifying the accuracy and validity of the analysis. Agreement between the theoretical and experimental results is acceptable. The investigation also shows that connection flexibility and local instability such as local buckling and torsional flexural buckling can affect the behaviour and strength of thin-walled frames significantly. The results can also provide further insight into the advanced study of practical structures where interaction between flexible connections and phenomenon associated with thin-walled members are present.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2006년도 PARALLEL CFD 2006
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• pp.219-222
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• 2006

• 한국레이저가공학회지
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• 제17권1호
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• pp.13-16
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• 2014

Indium Tin Oxide (ITO) has been used widely for transparent conducting thin films. In this work, the feasibility of a laser sintering process to fabricate ITO thin films on flexible substrates is examined. Nanoparticles of ~10 nm were spin coated on a Si wafer and then sintered by a KrF excimer laser. The sintered structure was characterized by scanning electron microscopy. Polycrystalline structures were fabricated by the process without thermally damaging the substrate. The electrical resistivity of the film was reduced to ~ 1/1000 of the initial value. This work demonstrates that nanosecond laser sintering of ITO particles can be a useful tool to fabricate ITO films on various flexible substrates.

• 한국터널지하공간학회 논문집
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• 제17권6호
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• pp.695-702
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• 2015

원심모형시험은 최근의 기계적, 이론적 발전에 따라 그 활용도와 정확성이 높아지고 있다. 원심모형시험은 원지반 응력을 효과적으로 재현할 수 있으므로 주위 지반 또는 암반과 상호작용을 하는 터널과 같은 지하구조물의 거동을 모사하기 적합하다. 본 연구에서는 병렬 터널의 지진시 동적 거동을 원심모형시험을 통하여 분석하였다. 터널 모델링시 지진에 의해 발생하는 최대 가속도 저감을 위하여 Flexible segment를 고려하였으며 Flexible segment의 두께가 얇은 경우와 두꺼운 경우를 각각 고려하였다. 시험 결과 Flexible segment의 지진시 터널 구조물에 발생하는 최대 가속도 저감 효과를 확인하였다. 그러나 Flexible segment가 얇은 경우 단주기파 적용시 최대가속도의 저감효과는 없었고, 두꺼운 경우 기반암 가속도가 클 경우 보다 효과적임을 확인하였다. 또한 동일 모델에 대하여 3차원 수치해석을 수행하여 지진시 거동을 파악한 결과, 시험 결과와 유사한 경향을 보임을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.322-325
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• 2009

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

• Structural Engineering and Mechanics
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• 제42권3호
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• pp.409-424
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• 2012

Since relatively low elasticity modulus of the FRP materials results in lower natural frequencies, it is necessary to study the free vibration of FRP transmission poles. In this paper, the free vibration of tapered FRP transmission poles with thin-walled circular cross-section is investigated by a tapered beam element. To model the flexible joints of the modular poles, a rotational spring model is used. Modal analysis is performed for typical FRP poles with/without joint and they are also modeled by ANSYS commercial finite element software. There is a good correlation between the results of the tapered beam finite element model and those obtained from ANSYS as well as the existing experimental results. The effects of different geometries, material lay-ups, concentrated masses at the pole tip, and joint flexibilities are evaluated. Moreover, it is concluded that using tougher fibres at the inner and outer layers of the cross-section, results in higher natural frequencies, significantly.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.