• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.3
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• pp.182-186
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• 2015

We investigated that effects of annealing ambient on the characteristics of functional nano thin film synthesized on glass substrate. The functional nano thin films were annealed by using rapid thermal annealing (RTA) equipment in vacuum, oxygen and nitrogen ambient, respectively. The hardness of the functional nano thin films were measured by a standard hardness testing method (ASTM D3363) such as a H-9H, F, HB and B-6B pencil (Mitsubishi, Japan). Also, the adhesion of the functional nano thin films were measured by a standard adhesion testing method (ASTM D3359) using scotch tape (3M, Korea). The contact angle of the functional nano thin films was measured by a contact angle analyzer (Phoenix 300 Touch, S.E.O.). The optical property of functional nano thin films was measured via UV-visible spectroscopy (S-3100, Scinco).

• Transactions of Materials Processing
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• v.19 no.3
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• pp.179-184
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• 2010

The present study is focused on the deep drawability and product qualities of ultra thin beryllium copper sheet metal. The goal of this research is to investigate the limit drawing ratio in deep drawing of ultra thin beryllium copper metal. For the experiment, beryllium copper(C1720, $50{\mu}m$ in thickness) is used. Tensile test are also carried out to find out the material properties. Deep drawing experiments are carried out in Universal Testing Machine(UTM) to obtain limit drawing ratio. Deep drawing tests are carried out for various specimen sizes. Teflon film is used as a lubricant and constant blank holding force is imposed. Sheet thickness and surface hardness are measured along radial direction after deep drawing. Thickness is measured using optical microscope. For beryllium copper(C1720), the maximum LDR of 2.4 is obtained when the die shoulder radius is 20 or 30 times of sheet thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.139-139
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• 2010

Rhenium-Iridium(Re-Ir) thin films were deposited onto the tungsten carbide(WC) molding core by sputtering system. The Re-Ir thin films on tungsten carbide molding core were analyzed by scanning electron microscope(SEM) and surface roughness. The Re-Ir coating technique has been intensive efforts in the field of coating process because the coating technique and process have been their feature, like hardness, high elasticity, adrasion resistance and mechanical stability and also have been applied widely the industrial and biomedical areas. In this report, tungsten carbide(WC) molding core was manufactures using high performance precision machining and the efforts of Re-Ir coating on the surface roughness.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.281-287
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• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.273-278
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• 2012

Over the last decade, the hafnium-based gate dielectric materials have been studied for many application fields. Because these materials had excellent behaviors for suppressing the quantum-mechanical tunneling through the thinner dielectric layer with higher dielectric constant (high-K) than $SiO_2$ gate oxides. Although high-K materials compensated the deterioration of electrical properties for decreasing the thickness of dielectric layer in MOSFET structure, their nano-mechanical properties of $HfO_2$ thin film features were hardly known. Thus, we examined nano-mechanical properties of the Hafnium oxide ($HfO_2$) thin film in order to optimize the gate dielectric layer. The $HfO_2$ thin films were deposited by rf magnetron sputter using hafnium (99.99%) target according to various oxygen gas flows. After deposition, the $HfO_2$ thin films were annealed after annealing at $400^{\circ}C$, $600^{\circ}C$ and $800^{\circ}C$ for 20 min in nitrogen ambient. From the results, the current density of $HfO_2$ thin film for 8 sccm oxygen gas flow became better performance with increasing annealing temperature. The nano-indenter and Weibull distribution were measured by a quantitative calculation of the thin film stress. The $HfO_2$ thin film after annealing at $400^{\circ}C$ had tensile stress. However, the $HfO_2$ thin film with increasing the annealing temperature up to $800^{\circ}C$ had changed compressive stress. This could be due to the nanocrystal of the $HfO_2$ thin film. In particular, the $HfO_2$ thin film after annealing at $400^{\circ}C$ had lower tensile stress, such as 5.35 GPa for the oxygen gas flow of 4 sccm and 5.54 GPa for the oxygen gas flow of 8 sccm. While the $HfO_2$ thin film after annealing at $800^{\circ}C$ had increased the stress value, such as 9.09 GPa for the oxygen gas flow of 4 sccm and 8.17 GPa for the oxygen gas flow of 8 sccm. From these results, the temperature dependence of stress state of $HfO_2$ thin films were understood.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.549-554
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• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1837-1841
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• 2008

The purpose of this study is to investigate the properties of the AAO nanohoneycomb structure. Especially the Elastic modulus and hardness play important role in determining the mechanical deformation of ceramic materials. The mechanical properties of the AAO nanononeycomb structure were investigated using indentation test.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.142-142
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• 2004

박막으로 표면처리한 다양한 강판이 자동차 차체와 부품, 가전제품 등의 제조를 위해 여러 가지 판재 성형공정에 적용되고 있으나, 제품 개발기간과 비용 감소, 성형과정에서 표면 코팅층의 특성 변화로 인해 성형성 열화와 성형불량을 줄이면서, 제품의 고정밀화, 고품질화를 실현하기 위해서는 코팅층에 대한 기계적 특성과 마찰거동을 명확히 규명하는 것이 반드시 필요하다 현재 나노 마이크로 수준인 코팅층의 기계적 물성치를 측정하기 위해 가장 널리 사용되는 방법은 나노 인덴테이션이다.(중략)

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.308-309
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• 2015

선형 이온빔 적용 플라즈마 표면처리 기술 및 코팅 공정을 통해서 고경도 투명 박막 형성 연구를 수행하였다. 플라즈마 전처리를 통해서 박막과 기판 사이의 밀착력을 향상시키고, advanced linear PECVD와 advaced plasma source를 적용하여 SiOxNy계의 박막을 형성하였다. 그 결과 투과도 92 % 이상, 표면 경도 6.3~6.9 GPa 이상의 고경도 투명 박막을 개발하였다. 본 연구 공정을 바탕으로 고경도의 투명 보호 필름 및 투명 디스플레이에 응용이 가능할 것으로 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.517-519
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• 2009

We fabricated thin film polarizer by coating lyotropic chromonic liquid crystals (LCLCs) dissolved in anionic monomer solution. Compared to water-based technique, the new method provided many advantages such as excellent coatability, good adhesion to various substrates, and superb surface hardness.