• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.2
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• pp.77-81
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Journal of Electrical Engineering and Technology
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• v.1 no.1
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• pp.98-100
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• 2006

ZnO thin films were deposited at different repetition rates of 5 Hz and 10 Hz by pulsed laser deposition. X-ray diffraction (XRD) full widths at half maximum (FWHMs) of (002) ZnO peak in ZnO thin film deposited at 5 Hz and 10 Hz was 0.22 and $0.26^{\circ}$, respectively. The grain size of ZnO thin film deposited at 5 Hz was larger than that of 10 Hz. The variation of repetition rates did not have an effect on the optical property of ZnO thin films. The degradation of the crystalline quality and surface morphology in ZnO thin film deposited at 10 Hz resulted from supersaturation effect by decrease of time interval between a ZnO particle arriving on a substrate by laser shot and a ZnO particle arriving on a substrate by next laser shot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.237-241
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• 1998

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.68-73
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• 2000

The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.250-250
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• 2010

We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.41-44
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• 2014

We employed UV-Ozone treatment method for the fabrication of dense and highly conductive nanoparticle thin films. We demonstrated the UV-Ozone treatment effect on the silver nanoparticle thin films as a function of time and temperature. The capping layers of nanoparticles were decomposed after UV-Ozone treatment and dense nanoparticle thin films were obtained. Moreover, electrical and mechanical properties of the thin films after UV-Ozone treatment were measured by using resistance measurements under tension in an in-situ tensile tester. The initial resistance of nanoparticle thin films was decreased by 82.6% with optimized UV-Ozone treatment condition of $150^{\circ}C$ for 20 minutes.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.71-79
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• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1053-1057
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• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.197-200
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• 2006

The portion of thin plate is expected to increases as to the development of design and fabrication technology. The weld-induced deformation is more serious in thin plates than in thick plates because heat affect zone of thin plates is wider than that of thick plates, and in addition internal and external constraints much more influence upon weld-induced deformation of thin plates. This paper deals with the application of the mechanical tensioning method to fillet weld of thin plates to reduce the weld-induced deformation. For this, fillet welding test have been carried out for several thin plate specimens with varying plate thickness and magnitude of tensile load. From the present study, it has been found that the tenssoning method is effective on reduction of weld-induced deformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.