• Composites Research
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• v.34 no.2
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• pp.129-135
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• 2021

In this paper, in order to examine the effect of fiber volume fraction non-uniformity in thickness direction on the buckling load of cylindrical composite lattice structures, we modified the equation of buckling load of the cylindrical composite lattice structures proposed by Vasiliev. The thickness of each layer of the rib was varied by fiber volume fraction, and material properties were applied differently by using the rule of mixture. Also, we performed linear buckling analysis by varying the structure size, thickness, and average value of the fiber volume fraction of finite element model. Finally, by comparing the calculation results of the buckling load of the equivalent model using the modified buckling load equation and the results of the finite element analysis, we found that the fiber volume fraction non-uniformity in thickness direction can reduce the buckling load of the cylindrical composite lattice structure.

• Restorative Dentistry and Endodontics
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• v.20 no.1
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• pp.303-315
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• 1995

An adequate and homogeneous cure of light-activated restroative material is very important for improvement of marginal adaptation and prevention of marginal leakage, secondary caries and pulpal irritation as well as expressing natural physical property of that material. The purpose of this study was to evaluate the change of surface hardness and cure uniformity of light-activated glass ionomer cements. Restorative(Fuji II LC, Vitremer) and lining(Baseline VLC, Vitrebond) light-activated glass ionomer cements were investigated for this study. The surface hardness of the top and bottom surfaces and cure uniformity of each 1mm, 1.5mm, 2mm, 2.5mm & 3mm in the thickness of specimen were measured immediately, at 1 hour, 24 hours and 1 week after light activation. The surface hardness change and cure uniformity of all the specimens were measured by Knoop hardness tester. The results were as follows. 1. The surface hardness of top and bottom surfaces in all groups increased with time(p<0.01). 2. Both top and bottom surfaces hardness of Vitrebond group measured immediately after light-activation were significantly lower than those of the other groups(p<0.01). 3. The surface hardness of top and bottom surfaces of restorative light -activated glass ionomer cements was higher than those of lining materials at 1 week(p<0.10). 4. Surface hardness of Vitremer group decreased as the specimen thickness increased, except top and bottom surfaces hardness of the specimen at 1 week(p<0.01). There was no significant difference in the surface hardness of Fuji II LC with changes in the thickness except bottom surface hardness of specimen at 24 hours and 1 week (p>0.05). 5. Surface hardness of Vitrebond group significantly decreased as the specimen thickness increased(p<0.01). There was no significant difference in the surface hardness of Baseline VLC group with changes in the thickness except bottom surface hardness of specimen measured immediately after light -activation(p>0.05). 6. The hardness ratio of top against bottom surface in all groups decreased with time(p<0.05). 7. There was no significant difference in the hardness ratio of top against bottom surface with changes of the thickness except Vitrebond group, 24 hours and 1 week of Vitremer group and 1 week of Baseline VLC group (p>0.05). These results suggest that surface hardness of restorative ligh-activated glass ionomer cements were highter than those of lining light-activated materials. In all groups, the surface hardness and cure uniformity continuously increased with time.

• Design & Manufacturing
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• v.18 no.2
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• pp.41-50
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• 2024

In this study, experimental design methods were used to derive optimal process conditions for improving the thickness uniformity of a 0.40 mm, 3.5 inch light guide panel. Process mapping and expert group analysis were used to identify factors that influence the thickness of injection molded products. The key factors identified were mold temperature, mold temperature, injection speed, packing pressure, packing time, clamp force, and flash time. Considering the resin manufacturer's recommended process conditions and the process conditions for similar light guide plates, a three-level range was selected for the identified influencing factors. L27 orthogonal array process conditions were generated using the Taguchi method. Injection molding was performed using these L27 orthogonal array to mold the 3.5 inch light guide plates. Thickness measurements were then taken, and the results were analyzed using the signal-to-noise ratio to maximize the CpK value, leading to the determination of the optimal process conditions. The thickness uniformity of the product was analyzed by applying the derived optimum process conditions. The results showed a 97.5% improvement in the Cpk value of 3.22 compared to the process conditions used for similar light guide plates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.242-245
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• 2014

In order to increase the thickness uniformity in chemical vapor depositon of silicon carbide, we have carried out CFD studies for a CVD apparatus having a horizontally-rotated 3-stage susceptor. We deposited silicon carbide films of 3C-SiC phase showing quite uniform thickness between stages but not uniform one in the stage. The cause of this nonuniformity is thought to be originated from the high rotational speed. And the uniformity between stages can be further increased with the $120^{\circ}$ split type nozzles from CFD results. Through the formation of silicon carbide film on graphite substrates we can make oxidation-resistant and dust-free graphite components with high hardness for the semiconductor applications.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.108-113
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• 2016

A miniaturized lab-scale Cu plating cell for the metallization of electronic devices was fabricated and its deposit uniformity and profile were investigated. The plating cell was composed of a polypropylene bath, an electrolyte ejection nozzle which is connected to a circulation pump. In deposit uniformity evaluation, thicker deposit was found on the bottom and sides of substrate, indicating the spatial variation of deposit thickness was governed by the tertiary current distribution which is related to $Cu^{2+}$ transport. The surface morphology of Cu deposit inside photo-resist pattern was controlled by organic additives in the electrolyte as it led to the flatter top surface compared to convex surface which was observed in the deposit grown without organic additives.

• Journal of the Korean Society of Visualization
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• v.14 no.2
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• pp.25-30
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• 2016

The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.38-41
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• 2010

Compared to conventional molding technology, the color uniformity of light direction emitted from LED is improved with PCB type lead frame technology in which metal thin film is used and transfer molding technology which makes the density of phosphor uniform by manufacturing high density LED lamp. The light efficiency and the color uniformity of the LED are improved by molding the phosphor layer outside of chip and controlling the thickness of the phosphor layer. CIE x,y difference of LED in major axis is also improved uniformly from 0 to 90 degrees.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.1-5
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• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.113-117
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• 2023

As sputter equipment becomes more complex, it becomes increasingly difficult to understand the parameters that affect the thickness uniformity of thin metal film deposited by sputter. To address this issue, we verified a deep learning model that can predict complex relationships. Specifically, we trained the model to predict the height of 36 magnets based on the thickness of the material, using Support Vector Machine (SVM), Multilayer Perceptron (MLP), 1D-Convolutional Neural Network (1D-CNN), and 2D-Convolutional Neural Network (2D-CNN) algorithms. After evaluating each model, we found that the MLP model exhibited the best performance, especially when the dataset was constructed regardless of the thin film material. In conclusion, our study suggests that it is possible to predict the sputter equipment source using film thickness data through a deep learning model, which makes it easier to understand the relationship between film thickness and sputter equipment.