• 제목/요약/키워드: thick films

검색결과 944건 처리시간 0.027초

Fabrication of Oxide Thick Film for Renewable Electrical Energy Storage Technology

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제6권4호
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    • pp.186-189
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    • 2005
  • We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

The Dielectric Properties of BaTiO3/SrTiO3 Heterolayered Thick films by Screen Printing Method

  • Nam, Sung-Pill;Lee, Young-Hie;Bae, Seon-Gi;Lee, Sung-Gap
    • Transactions on Electrical and Electronic Materials
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    • 제6권5호
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    • pp.210-213
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    • 2005
  • The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated by the screen printing method on alumina substrates. The effect of the sintering temperature on the microstructure and dielectric properties of the $BaTiO_3/SrTiO_3$ thick films has been investigated. The relative dielectric constant and dielectric loss at 1 MHz of the $BaTiO_3/SrTiO_3$ heterolayered thick films with sintering temperature of $1350^{\circ}C$ were about 751 and 1.74, respectively. The remanent polarization $(P_r)$ of the pure $(Ba_{0.5}Sr_{0.5})TiO_3$ and $BaTiO_3/SrTiO_3$ heterolayered films are approximately $5.1\;{\mu}C/cm^2$ and $10\;{\mu}C/cm^2$. This study suggests that the design of the $BaTiO_3/SrTiO_3$ heterolayered thick films capacitor with different phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

$BaTiO_3/SrTiO_3$ 이종층 후막의 유전특성 (The Dielectric Properties of $BaTiO_3/SrTiO_3$ Heterolayered Thick Films)

  • 남성필;이상철;이성갑;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.58-60
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    • 2004
  • The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

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Tunable Properties of Ferroelectric Thick Films With MgO Added on (BaSr)TiO3

  • Kim, In-Sung;Song, Jae-Sung;Jeong, Soon-Jong;Jeon, So-Hyun;Chung, Jun-Ki;Kim, Won-Jeong
    • Journal of Electrical Engineering and Technology
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    • 제2권3호
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    • pp.391-395
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    • 2007
  • MgO enhanced $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ thick films have been fabricated by a tape casting and firing method for tunable devices on the microwave frequency band. In order to improve ferroelectric properties, the composite thick films enhanced with MgO on BST have been asymmetrically annealed by a focused halogen beam method. Dielectric constants of composite thick films are changed from 1050 to 1300 at 100 kHz after 60 s and 150 s annealing by the focused halogen beam. Even though no prominent changes were previously observed from the thick films before and after annealing in terms of chemical composition and surface morphology, it is clear that the average particle size of the thick films calculated by Scherrer's formula were increased by annealing. Furthermore, a strong correlation between particle size and dielectric constant of the composite thick films has been observed; dielectric constant increases with increased particle size. This has been attributed to the increased volume of ferroelectric domain due to increased particle sizes. As a result, the tuning range was improved by halogen beam annealing.

Fabrication of High Tc Superconducting Films by CVD Process

  • Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제5권3호
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    • pp.120-121
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    • 2004
  • YBaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The growth temperature to obtain the thick films was decreased by around 150$^{\circ}C$ due to plasma enhancement. The zero resistivity temperatures for films grown at 590$^{\circ}C$ and 620$^{\circ}C$ were 55 and 80 K, respectively.

Screen-printing법으로 제작한 BSCT 후막의 구조적 특성 (The Structural properties of BSCT thick films fabricated by screen-printing method)

  • 허영식;이성갑;박상만;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.545-548
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    • 2002
  • $(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(BSCT) (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ratio were studied. As a result of the differential thermal analysis (DTA), exothermic perk was observed at around $860^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The BSCT thick films sintered at $1350^{\circ}C$ for 2h showed the average grain size of $2{\sim}7{\mu}m$. The average thickness of BSCT thick films, obtained by 3 times of screen-printing, was approximately $85{\mu}m$.

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소결온도에 따른 BSCT 후막의 구조적 특성 (Structural Properties of BSCT Thick Films with variation of Sintering Temperature)

  • 박상만;이성갑;윤상은;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.212-213
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    • 2006
  • BSCT(60/30/10) powder specimens were fabricated by sol-gel method and BSCT thick films were fabricated by screen-printing method. The coating and drying procedure was repeated 6 times. Then the structural properties as a function of the sintering temperature. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the crystalline phase. The BSCT sintered at $1430^{\circ}C$ showed the cubic perovskite structure. The prosity and thickness of the BSCT thick films was decreased with sintering temperature. The thickness of BSCT thick films at $1420^{\circ}C$ was approximately $40{\mu}m$.

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Microwave Dielectric Properties of BSCT Thick Films with Addition of $Nb_2O_5$

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.632-635
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    • 2003
  • [ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

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Structural and Dielectric Properties of Pb(zr0.2Ti0.8)O3 Thick Films Fabricated using a Screen Printing Technologies

  • Lee, Sung-Gap;Shim, Young-Jae
    • 한국전기전자재료학회논문지
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    • 제18권6호
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    • pp.550-553
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    • 2005
  • [ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.

$Al_{2}O_{3}$가 첨가된 BSCT 후막의 유전특성 (Dielectric Properties of $Al_{2}O_{3}-Doped$ BSCT Thick Films)

  • 이성갑;김창일;김정필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.338-341
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    • 2002
  • $(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

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