• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.133-133
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• 2016

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.67-67
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.99-99
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.21-21
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• 1996

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1829-1832
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• 2008

This paper reports a novel gas sensing method by using a thermoelectric device, thermopile in this case, with an embedded tin oxide catalyst. By using a thin catalyst film, the response time and recovery time were remarkably improved. The fabricated gas sensor was characterized through detecting NOx gas with various concentrations.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.67-74
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• 2018

Thermoelectric thin film modules were fabricated by electroplating p-type $Sb_2Te_3$and n-type $Bi_2Te_3$ thin film legs with the same thickness of $20{\mu}m$ and different diameters of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$, respectively. The output voltage and output power of thin film modules were measured and compared as a function of the leg diameter. The modules processed with thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter exhibited open circuit voltages of 365 mV at ${\Delta}T=36.7K$, 142 mV at ${\Delta}T=37.5K$, and 53 mV at ${\Delta}T=36.1K$, respectively. Maximum output powers of $845{\mu}W$ at ${\Delta}T=36.7K$, $631{\mu}W$ at ${\Delta}T=37.5K$, and $276{\mu}W$ at ${\Delta}T=36.1K$ were obtained for the modules fabricated with the thin film legs of $100{\mu}m$, $300{\mu}m$, and $500{\mu}m$-diameter, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.9-15
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• 2007

Thermoelectric properties of the electrodeposited Bi-Te films and photoresist process have been investigated to apply for thermoelectric thin film devices. After plating in Bi-Te solutions of 20 mM concentration, which were prepared by dissolving $Bi_2O_3$ and $TeO_2$ into 1M $HNO_3$, thermoelectric properties of the films were characterized with variation of the Te/(Bi+Te) ratio in a plating solution. With increasing the Te/(Bi+Te) ratio in the plating solution from 0.5 to 0.65, Seebeck coefficient of Bi-Te films changed from $-59{\mu}V/K$ to $-48{\mu}V/K$ and electrical resistivity was lowered from $1m{\Omega}-cm$ to $0.8m{\Omega}-cm$ due to the increase in the electron concentration. Maximum power factor of $3.5{\times}10^{-4}W/K^2-m$ was obtained for the Bi-Te film with the $Bi_2Te_3$ stoichiometric composition. Using multilayer overhang process, the photoresist pattern to form thermoelectric legs of 30 m depth and 100m diameter was successfully fabricated fur micro thermoelectric device applications.

• Composites Research
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• v.29 no.4
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• pp.156-160
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• 2016

Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

• Transactions of the Korean Society of Automotive Engineers
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• v.6 no.5
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• pp.10-19
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• 1998

The erosion of electrode in spot welding of aluminium alloy by direct current is dependent on the electric polarity. The positive electrode is much more eroded than the negative one. To explain this phenomenon, Peltier effect has been generally accepted as a unique theory. In this study Peltier effect was evaluated by calculations on the basis of some references and experiments. The difference of heat generated by Peltier effect on both electrode surfaces was, however, only 4% of total heat generated during wel- ding. Because of insufficient explanation, Kohler theory, which is mainly affected by thin oxide film, was introduced. A theoretical calculation showed 17% of the temperature difference between the positive and negative electrode, in case "surface voltage" resulted from oxide film was 30% of total contact voltage. This revealed that the erosion of electrode could be more affected by Kohler theory than effect.an effect.