• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.18-23
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• 2012

We propose and implement a single-wire communication protocol for thermal management systems using thin film thermoelectric modules for 3D IC cooling. The proposed single-wire communication protocol connects the temperature sensors, located near hot spots, to measure the local temperature of the chip. A unique ID number identifying the location of each hot spot is assigned to each temperature sensor. The prototype chip was fabricated by a $0.13{\mu}m$ CMOS MPW process, and the operation of the chip is verified.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.67-74
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• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• Journal of the Korean Electrochemical Society
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• v.23 no.1
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• pp.18-23
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• 2020

Antimony telluride (Sb_xTe_y) thin films were synthesized by an electrodeposition method with a control of applied potential at room temperature. Characterization of electrical and thermoelectric properties such as conductivity, Seebeck coefficient, and power factor (P.F.) were conducted as a function of the chemical composition of the electrodeposited films. Morphology of thin films were dense and uniform and the composition was tailored from 25 to 60 at.% of the Sb content by altering the applied potential from -0.13 to -0.27 V (vs. SCE). The conductivity of the films were ranged from 2 × 10^-4 ~ 5 × 10^-1 S/cm indicating their amorphous behavior. The meaured Seebeck coefficient of films were relatively high compared to that of bulk single cyrstal Sb_xTe_y due to their low carrier concentration. The variation of the Seebeck coefficient of the films was also related to the change of chemical composition, showing the power factor of ~10 ㎼/mK².

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.41-45
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• 2004

P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.141-146
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• 2020

Thermoelectric Bi₂Te₃ thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.53-53
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.70-71
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• 1993

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.180-185
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• 2006

Microwatt power level at relatively high voltage(order of volt) was produced by $Bi_{0.5}Sb_{1.5}Te_{3}/Bi_{2}Te_{2.4}Se_{0.6}$ thin film thermoelectric generators, and maximum output power varied with temperature difference in the square-law relation. Output voltage and current were possible to control by changing the way of electrical connection as well as the number of stacking plate-modules. Variation of open circuit voltage and short circuit current with temperature difference showed a linear relationship. There were, however, some differences in variations; open circuit voltage were dependent on the number of plate-module when connected in series, but it was not for parallel connection. On the other hand, short circuit current showed the opposite behavior to the case of open circuit current.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.89-93
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• 2017

A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with $1{\mu}m$-thick n-type $In_3Sb_1Te_2$ and p-type $Ge_2Sb_2Te_5$ deposited via radio frequency magnetron sputtering. First, $1{\mu}m$-thick GST and IST thin films were deposited at $250^{\circ}C$ and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to $450^{\circ}C$ via rapid thermal annealing. The optimal power factor was found at an annealing temperature of $400^{\circ}C$ for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the $1{\mu}m$-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ${\Delta}T=12K$, respectively.