• Steel and Composite Structures
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• 제38권4호
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• pp.447-462
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• 2021

In this work, we consider a problem in the context of thermoelectric materials with memory-dependent derivative for a half space which is assumed to have variable thermal conductivity depending on the temperature. The Lamé's modulii of the half space material is taken as a function of the vertical distance from the surface of the medium. The surface is traction free and subjected to a time dependent thermal shock. The problem was solved by using the Laplace transform method together with the perturbation technique. The obtained results are discussed and compared with the solution when Lamé's modulii are constants. Numerical results are computed and represented graphically for the temperature, displacement and stress distributions. Affectability investigation is performed to explore the thermal impacts of a kernel function and a time-delay parameter that are characteristic of memory dependent derivative heat transfer in the behavior of tissue temperature. The correlations are made with the results obtained in the case of the absence of memory-dependent derivative parameters.

• 한국분말재료학회지
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• 제23권4호
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• pp.263-269
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• 2016

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type $Bi_2Te_3$ based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type $Bi_2Te_3$ composite powder has a composition of $Bi_{0.5}Sb_{1.5}Te_3$ (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.

• 한국전자통신학회논문지
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• 제19권3호
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• pp.589-602
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• 2024

열전 발전기(TEG)는 일반적으로 열 변환 효율이 높지 않다. 열전 발전기 모듈의 성능은 재료의 특성, 다리의 개수 외에도 다리의 형상에 따라 달라진다. 본 연구에서는 폐열을 효율적으로 수확할 수 있도록 열전소자의 다리 형상을 원통형, 큐브형 등 다양한 기하학적 구조로 모델링하여 전기적 특성을 수치상으로 비교하였다. 다리 형상에 따른 온도분포 및 발전량을 비교하였고 기존 Cube 모양이 가장 높게 나타났다. 냉각효과를 적용한 발전량을 비교한 결과 자연대류에서는 Cone, 강제대류에서는 Hourglass 모양이 가장 높았다. 본 연구 결과에 따르면 기하학적 구조가 열전 발전기의 효율에 영향을 미칠 수 있음을 확인하였다

• 한국분말재료학회지
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• 제3권4호
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• pp.246-252
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• 1996

$Bi_{2}Te_{3}-Sb_{2}Te_{3}$, $Bi_{2}Te_{3}-Bi_{2}Se_{3}$ solid solutions are of great interest as materials for thermoelectric energy conversion. One of the key technologies to ensure the efficiency of thermoelectric device is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification followed by hot pressing was investigated to produce homogeneous thermoelectric materials. Characteristics of the materials were examined with XRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as excess Te quantity and hot pressing temperature. Quenched ribbons are very brittle and consisted of homogeneous $Bi_{2}Te_{3}$, $Sb_{2}Te_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 3.073$\times$$10^{-3}K^{-4}$. The bending strength of the material, hot pressed at 45$0^{\circ}C$, was 5.87 kgf/${mm}^2$.

• 한국분말재료학회지
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• 제17권6호
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• pp.482-488
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• 2010

In this study, $FeSi_2$ as high temperature performance capable thermoelectric materials was manufactured by powder metallurgy.The as-casted Fe-Si alloy was annealed for homogenization below $1200^{\circ}C$ for 3 h. Due to its high brittleness, the cast alloy transformed to fine powders by ball-milling, followed by subsequent compaction (hydraulic pressure; 2 GPa) and sintering ($1200^{\circ}C$, 12 h). In order to precipitate ${\beta}-FeSi_2$, heat treatment was performed at $850^{\circ}C$ with varying dwell time (7, 15 and 55 h). As a result of this experiment thermoelectric phase ${\beta}-FeSi_2$ was quickly transformed by powder metallurgical process. There was not much change in powder factor between 7h and 55h specimens.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.23-23
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• 2009

It has been challenging to increase the thermoelectric figure of merit ($ZT=S^2{\sigma}T/\kappa$) of materials, which determine the efficiency of thermoelectric devices, because the three parameters Seebeck coefficient (S), electrical conductivity ($\sigma$), and thermal conductivity ($\kappa$) of bulk materials are inter-dependent. With the development of nanotechnology, ZT values of nanostructured materials are predicted to be enhanced by classical size effects and quantum confinement effects. In particular, Bi nanowires were suggested as one of ideal thermoelectric materials due to the expected quantum confinement effects for the simultaneous increase in Sand. In this work, we have investigated the thermal conductivity of individual single crystalline Bi nanowires with d = 98 nm and d = 327 nm in the temperature range 40 - 300 K using MEMS devices. The for the Bi nanowire with d = 98 nm was observed to be ~ 1.6 W/m-K at 300 K, which is much lower than that of Bi bulk (8 W/m-K at 300 K). This indicates that the thermal conductivity of the Bi suppressed due to enhanced surface boundary scattering in one-dimensional structures. Our results suggest that Bi nanowires grown by stress-induced method can be used for high-efficiency thermoelectric devices.

• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.852-856
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• 2015

In this study, we investigate the effect of high-energy ball milling on thermoelectric transport properties in double-filled $CoSb_3$ skutterudite ($In_{0.2}Yb_{0.1}Co_4Sb_{12}$). $In_{0.2}Yb_{0.1}Co_4Sb_{12}$ powders are milled using high-energy ball milling for different periods of time (0, 5, 10, and 20 min), and the milled powders are consolidated into bulk samples by spark plasma sintering. Microstructure analysis shows that the high-energy ball milled bulk samples are composed of nano- and micro-grains. Because the filling fractions are reduced in the bulk samples due to the kinetic energy of the high-energy ball milling, the carrier concentration of the bulk samples decreases with the ball milling time. Furthermore, the mobility of the bulk samples also decreases with the ball milling time due to enhanced grain boundary scattering of electrons. Reduction of electrical conductivity by ball milling has a decisive effect on thermoelectric transport in the bulk samples, power factor decreases with the ball milling time.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 한국분말재료학회지
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• 제31권1호
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• pp.50-56
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• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.265-266
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• 2006

It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.