• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• Food Science and Biotechnology
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• 제16권6호
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• pp.981-987
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• 2007

Effects of lignan compounds (sesamol, sesamin, and sesamolin) extracted from roasted sesame oil on the autoxidation at $60^{\circ}C$ for 7 days and thermal oxidation at $180^{\circ}C$ for 10 hr of sunflower oil were studied by determining conjugated dienoic acid (CDA) contents, p-anisidine values (PAV), and fatty acid composition. Contents of lignan compounds during the oxidations were also monitored. ${\alpha}$-Tocopherol was used as a reference antioxidant. Addition of lignan compounds decreased CDA contents and PAY of the oils during oxidation at $60^{\circ}C$ or heating at $180^{\circ}C$, which indicated that sesame oil lignans lowered the autoxidation and thermal oxidation of sunflower oil. Sesamol was the most effective in decreasing CDA formation and hydroperoxide decomposition in the auto- and thermo-oxidation of oil, and its antioxidant activity was significantly higher than that of ${\alpha}$-tocopherol. Sesamol, sesamin, and sesamolin added to sunflower oil were degraded during the oxidations of oils, with the fastest degradation of sesamol. Degradation of sesamin and sesamolin during the oxidations of the oil were lower than that of ${\alpha}$-tocopherol. The results strongly indicate that the oxidative stability of sunflower oil can be improved by the addition of sesamol, sesamin, or sesamolin extracted from roasted sesame oil.

• Bulletin of the Korean Chemical Society
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• 제11권1호
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• pp.80-81
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• 1990

• Korean Chemical Engineering Research
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• 제48권2호
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• pp.259-267
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• 2010

불균일 촉매 CuO를 이용한 반응성 아조계 염료 Reactive Black 5(RB5) 폐수의 촉매습식산화에서 반응온도($190{\sim}230^{\circ}C$) 및 촉매농도(0.00~0.20 g/l)가 폐수의 색도 및 총 유기탄소 TOC 제거에 미치는 영향을 조사하였다. 폐수의 색도는 분광광도계를 사용하여 측정하였고, 습식산화속도는 TOC를 이용하여 산출하였다. 열분해 조건($230^{\circ}C$, 120 min)에서 폐수의 색도는 약 90%까지 제거되었지만 TOC는 제거되지 않았다. RB5 폐수 촉매 습식산화에서의 폐수의 색도 및 TOC 제거속도는 반응온도 및 촉매농도를 증가시킴에 따라 증가하였다. 촉매의 영향은 0.01 g CuO/l에서 이미 상당히 크게 나타났으며 0.05 g CuO/l 이상에서의 촉매농도 증가에 따른 효과는 작았다. 폐수 색도의 초기변화는 색도에 대한 1차 반응속도론으로 나타낼 수 있었으며, TOC 변화는 폐수 TOC를 쉽게 산화되는 TOC와 난분해성 TOC 로 구분한 global 모델로 묘사할 수 있었다. 반응온도의 폐수 색도 및 TOC 제거속도에 미치는 영향은 Arrhenius 상관관계식으로 묘사할 수 있었다. RB5 폐수의 열분해, 습식산화 및 0.20 g CuO/l의 촉매농도를 사용한 촉매습식산화 조건에서의 색도 제거반응의 활성화에너지는 각각 108.4, 78.3 및 74.1 kJ/mol의 값을 나타내었다. RB5 폐수 촉매습식산화에서의 TOC 제거반응에서 산화 최종산물로의 전환에 대한 난분해성 중간산물로의 전환 비는 페놀 습식산화에 비하여 상대적으로 높았다.

• 대한화학회지
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• 제29권2호
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• pp.158-163
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• 1985

2M $AgNO_3$ 수용액을 백금이나 탄소 전극을 이용하여 비교적 높은 전류밀도에서 전해 산화하였다. 이 생성물을 산화력과 X-ray powder diffraction patterns, thermal analysis, 그리고 환원 곡선등을 구하여 $Ag_7O_8NO_3$ 임을 확인하고 끓는물에서 가수분해 하여 Alfa-product AgO보다 순도가 높고 비중이 큰 AgO를 얻을 수 있었다.

• 한국입자에어로졸학회지
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• 제9권3호
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• pp.173-185
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• 2013

Oxidations of metal generate large quantity of thermal and light energies but no toxic pollutants, so that metals with high calorific values, such as beryllium, boron, aluminum, magnesium, and lithium, are possible to be used as clean fuels instead of fossil fuels. However, they are so explosive due to very high oxidation rates that they should be stabilized by their surface passivation with oxides, organics and inorganics. For reasonable use of energetic metal particles as solid fuel, therefore, some detail information, such as thermal properties, preparation and passivation methods, and application area, of the energetic metals is introduced in this manuscript.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• 한국표면공학회지
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• 제42권1호
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• pp.26-33
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• 2009

Recently ultra-supercritical steam power plants operate at $1000^{\circ}F$ ($538^{\circ}C$) and 3500 psi (24.1 MPa). Thermal efficiency of power plant will be increased about 2% if steam temperature increases from $1000^{\circ}F$ to $1150^{\circ}F$ ($621^{\circ}C$). In this study valve materials Incoloy901 (IC901) and Inconel718 (IN718) were nitrided to improve the surface hardness and solid lubrication function of the valve materials. The hardness of both IC901 and IN718 increased about two times by ion nitriding. IC901, IN718 and their nitrided specimens were corroded under ultra super-critical condition (USC) of $621^{\circ}C$. and 3600 psi (24.8 MPa) for 2000 hours. Oxidations of both IC901 and IN718 were very small due to the formation of protective oxide layer on the surface. But the corrosion resistance of both nitrided specimens decreased because of the formation of non-protective nitride layer of $Fe_{4}N$, $Fe_{2}N$ and CrN on the surface layer. The hardness of both nitrided IC901 and IN718 at $20{\mu}m$ depth from the surface decreased about 30% and 20% respectively by USC 2000 hours.

• 한국진공학회지
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• 제10권1호
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• pp.44-50
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• 2001

전자빔증착법과 이온빔의 도움을 받는 전자빔 증착법(ion beam assisted electron beam deposition; IBAED)법으로 비정질 Si(-200nm) 박막을 p-Si 기판위에 성장하고 이 두 구조를 급속열처리산화(Rapid Thermal Oxidation; RTO)를 시킴으로서 $SiO_2$/나노결정 Si(nanocrystal Si)/p-Si구조를 형성하였다. 그 후 시료 위에 Au 막을 증착함으로서 최종적으로 나노결정이 함유된 MOS(metal-oxide-semiconductor)구조를 완성하였다. 이 MOS구조내의 나노결정 Si의 전하충전 특성을 바이어스 sweep 비율을 변화시키면서 Capacitance-Voltage(C-V) 특성을 측정하여 조사하였다. 전자빔증착시료의 경우에는 $\DeltaV_{FB}$(flatband voltage shift)가 1V 미만의 작은 C-V 이력곡선이 관측된 반면 IBAED 시료의 경우는 $\DeltaV_{FB}$가 22V(2V/s Voltage Sweep비율) 이상인 대단히 큰 C-V 이력곡선이 관측되었다. 전자빔증착중 Ar ion beam을 조사하면 표면 흡착원자이동이 활성화되고 따라서 비정질 Si내에 Si의 핵 생성율이 증가하여 후속 급속열처리산화공정중 이 높은 농도의 핵들이 나노결정 Si으로 자라나게 되고 이렇게 형성된 높은 농도의 나노결정의 전하 충전 및 방전현상이 큰 이력곡선을 나타내는 원인이라고 생각된다. 따라서 IBAED 방법이 고농도의 나노결정 Si을 형성시키는데 유용한 방법이라고 판단된다.