• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.

• Food Science and Biotechnology
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• v.16 no.6
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• pp.981-987
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• 2007

Effects of lignan compounds (sesamol, sesamin, and sesamolin) extracted from roasted sesame oil on the autoxidation at $60^{\circ}C$ for 7 days and thermal oxidation at $180^{\circ}C$ for 10 hr of sunflower oil were studied by determining conjugated dienoic acid (CDA) contents, p-anisidine values (PAV), and fatty acid composition. Contents of lignan compounds during the oxidations were also monitored. ${\alpha}$-Tocopherol was used as a reference antioxidant. Addition of lignan compounds decreased CDA contents and PAY of the oils during oxidation at $60^{\circ}C$ or heating at $180^{\circ}C$, which indicated that sesame oil lignans lowered the autoxidation and thermal oxidation of sunflower oil. Sesamol was the most effective in decreasing CDA formation and hydroperoxide decomposition in the auto- and thermo-oxidation of oil, and its antioxidant activity was significantly higher than that of ${\alpha}$-tocopherol. Sesamol, sesamin, and sesamolin added to sunflower oil were degraded during the oxidations of oils, with the fastest degradation of sesamol. Degradation of sesamin and sesamolin during the oxidations of the oil were lower than that of ${\alpha}$-tocopherol. The results strongly indicate that the oxidative stability of sunflower oil can be improved by the addition of sesamol, sesamin, or sesamolin extracted from roasted sesame oil.

• Bulletin of the Korean Chemical Society
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• v.11 no.1
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• pp.80-81
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• 1990

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.259-267
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• 2010

The catalytic wet oxidations of the wastewater containing azo dye Reactive Black 5(RB5) with heterogeneous catalyst of CuO have been carried out to investigate the effects of temperature($190{\sim}230^{\circ}C$) and catalyst concentration(0.00~0.20 g/l) on the removals of colour and total organic carbon TOC. The wastewater colour was measured with spectrophotometer, and the oxidation rate was estimated with TOC. About 90% of colour was removed during 120 min in thermal degradation of the RB5 wastewater at $230^{\circ}C$, while TOC was not removed at all. As increasing reaction temperature and catalyst concentration, the removal rates of colour and TOC increased in the catalytic wet oxidations of RB5 wastewater. The effects of catalyst were already considerable even at 0.01 g CuO/l, while the removal rates of colour and TOC increased negligibly with increasing the catalyst concentration above 0.05 g CuO/l. The initial destruction rates of the wastewater colour have shown the first-order kinetics with respect to the wastewater colour. TOC changes during catalytic wet oxidations have been well described with the global model, in which the easily degradable TOC was distinguished from non-degradable TOC of the wastewater. The impacts of reaction temperature on the destruction rate of the wastewater colour and TOC could be described with Arrhenius relationship. Activation energies of the colour removal reaction in thermal degradation, wet oxidation, and catalytic wet oxidation(0.20 g CuO/l) of the RB5 wastewater were 108.4, 78.3 and 74.1 kJ/mol, respectively. The selectivity of wastewater TOC into the non-degradable intermediates relative to the end products in the catalytic wet oxidations of RB5 wastewater was higher compared to that in phenol wet oxidations.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.158-163
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• 1985

The anodic oxidations of the Silver(I) / Silver(II) / Silver(III) system have been studied in aq. 2M $AgNO_3$ solution with Platinum and Carbon electrodes. It has been found that $Ag_7O_8NO_3$ can be produced at relatively higher current density. Deposited black Oxy-salt were analyzed with several methods such as oxidizing power, X-ray powder diffraction patterns, thermal analysis, and reduction curves. It decomposed to AgO upon being suspended in boiling water. AgO compound obtained from $Ag_7O_8NO_3$ were purer and denser than Alfa-product AgO.

• Particle and aerosol research
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• v.9 no.3
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• pp.173-185
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• 2013

Oxidations of metal generate large quantity of thermal and light energies but no toxic pollutants, so that metals with high calorific values, such as beryllium, boron, aluminum, magnesium, and lithium, are possible to be used as clean fuels instead of fossil fuels. However, they are so explosive due to very high oxidation rates that they should be stabilized by their surface passivation with oxides, organics and inorganics. For reasonable use of energetic metal particles as solid fuel, therefore, some detail information, such as thermal properties, preparation and passivation methods, and application area, of the energetic metals is introduced in this manuscript.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.26-33
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• 2009

Recently ultra-supercritical steam power plants operate at $1000^{\circ}F$ ($538^{\circ}C$) and 3500 psi (24.1 MPa). Thermal efficiency of power plant will be increased about 2% if steam temperature increases from $1000^{\circ}F$ to $1150^{\circ}F$ ($621^{\circ}C$). In this study valve materials Incoloy901 (IC901) and Inconel718 (IN718) were nitrided to improve the surface hardness and solid lubrication function of the valve materials. The hardness of both IC901 and IN718 increased about two times by ion nitriding. IC901, IN718 and their nitrided specimens were corroded under ultra super-critical condition (USC) of $621^{\circ}C$. and 3600 psi (24.8 MPa) for 2000 hours. Oxidations of both IC901 and IN718 were very small due to the formation of protective oxide layer on the surface. But the corrosion resistance of both nitrided specimens decreased because of the formation of non-protective nitride layer of $Fe_{4}N$, $Fe_{2}N$ and CrN on the surface layer. The hardness of both nitrided IC901 and IN718 at $20{\mu}m$ depth from the surface decreased about 30% and 20% respectively by USC 2000 hours.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.