• Title/Summary/Keyword: thermal oxidation

Search Result 1,006, Processing Time 0.032 seconds

CO Sensing Characteristics of $Pt-SnO_{2-x}$ Thin Film Devices Fabricated by Thermal Oxidation (열산화법으로 형성한 $Pt-SnO_{2-x}$ 박막소자의 CO 가스 감지특성)

  • Shim, Chang-Hyun;Park, Hyo-Derk;Lee, Jae-Hyun;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
    • /
    • v.1 no.2
    • /
    • pp.117-123
    • /
    • 1992
  • $Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

  • PDF

LIMITED OXIDATION OF IRRADIATED GRAPHITE WASTE TO REMOVE SURFACE CARBON-14

  • Smith, Tara E.;Mccrory, Shilo;Dunzik-Gougar, Mary Lou
    • Nuclear Engineering and Technology
    • /
    • v.45 no.2
    • /
    • pp.211-218
    • /
    • 2013
  • Large quantities of irradiated graphite waste from graphite-moderated nuclear reactors exist and are expected to increase in the case of High Temperature Reactor (HTR) deployment [1,2]. This situation indicates the need for a graphite waste management strategy. Of greatest concern for long-term disposal of irradiated graphite is carbon-14 ($^{14}C$), with a half-life of 5730 years. Fachinger et al. [2] have demonstrated that thermal treatment of irradiated graphite removes a significant fraction of the $^{14}C$, which tends to be concentrated on the graphite surface. During thermal treatment, graphite surface carbon atoms interact with naturally adsorbed oxygen complexes to create $CO_x$ gases, i.e. "gasify" graphite. The effectiveness of this process is highly dependent on the availability of adsorbed oxygen compounds. The quantity and form of adsorbed oxygen complexes in pre- and post-irradiated graphite were studied using Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Xray Photoelectron Spectroscopy (XPS) in an effort to better understand the gasification process and to apply that understanding to process optimization. Adsorbed oxygen fragments were detected on both irradiated and unirradiated graphite; however, carbon-oxygen bonds were identified only on the irradiated material. This difference is likely due to a large number of carbon active sites associated with the higher lattice disorder resulting from irradiation. Results of XPS analysis also indicated the potential bonding structures of the oxygen fragments removed during surface impingement. Ester- and carboxyl-like structures were predominant among the identified oxygen-containing fragments. The indicated structures are consistent with those characterized by Fanning and Vannice [3] and later incorporated into an oxidation kinetics model by El-Genk and Tournier [4]. Based on the predicted desorption mechanisms of carbon oxides from the identified compounds, it is expected that a majority of the graphite should gasify as carbon monoxide (CO) rather than carbon dioxide ($CO_2$). Therefore, to optimize the efficiency of thermal treatment the graphite should be heated to temperatures above the surface decomposition temperature increasing the evolution of CO [4].

Thermal Atomic Layer Etching of the Thin Films: A Review (열 원자층 식각법을 이용한 박막 재료 식각 연구)

  • Hyeonhui Jo;Seo Hyun Lee;Eun Seo Youn;Ji Eun Seo;Jin Woo Lee;Dong Hoon Han;Seo Ah Nam;Jeong Hwan Han
    • Journal of Powder Materials
    • /
    • v.30 no.1
    • /
    • pp.53-64
    • /
    • 2023
  • Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

Study on the Thermal Degradation Behavior of FKM O-rings

  • Lee, Jin Hyok;Bae, Jong Woo;Choi, Myoung Chan;Yoon, Yoo-Mi;Park, Sung Han;Jo, Nam-Ju
    • Elastomers and Composites
    • /
    • v.53 no.4
    • /
    • pp.213-219
    • /
    • 2018
  • The degradation mechanism and physical properties of an FKM O-ring were observed with thermal aging in this experiment. From X-ray photoelectron spectroscopy (XPS) analysis, we could observe carbon (285 eV), fluoro (688 eV), and oxygen (531 eV) peaks. Before thermal aging, the concentration of fluoro atoms was 51.23%, which decreased to 8.29% after thermal aging. The concentration of oxygen atoms increased from 3.16% to 20.39%. Under thermal aging, the FKM O-ring exhibited debonding of the fluoro-bond by oxidation. Analysis of the C1s, O1s, and F1s peaks revealed that the degradation reaction usually occurred at the C-F, C-F2, and C-F3 bonds, and generated a carboxyl group (-COOH) by oxidation. Due to the debonding reaction and decreasing mobility, the glass transition temperature of the FKM O-ring increased from $-15.91^{\circ}C$ to $-13.79^{\circ}C$. From the intermittent CSR test, the initial sealing force was 2,149.6 N, which decreased to 1,156.2 N after thermal aging. Thus, under thermal aging, the sealing force decreased to 46.2%, compared with its initial state. This phenomenon was caused by the debonding reaction and decreasing mobility of the FKM O-ring. The S-S curve exhibited a 50% increase in modulus, with break at a low strain and stress state. This was also attributed to the decreasing mobility due to thermal aging degradation.

Chemistry of persulfates for the oxidation of organic contaminants in water

  • Lee, Changha;Kim, Hak-Hyeon;Park, Noh-Back
    • Membrane and Water Treatment
    • /
    • v.9 no.6
    • /
    • pp.405-419
    • /
    • 2018
  • Persulfates (i.e., peroxymonosulfate and peroxydisulfate) are capable of oxidizing a wide range of organic compounds via direct reactions, as well as by indirect reactions by the radical intermediates. In aqueous solution, persulfates undergo self-decomposition, which is accelerated by thermal, photochemical and metal-catalyzed methods, which usually involve the generation of various radical species. The chemistry of persulfates has been studied since the early twentieth century. However, its environmental application has recently gained attention, as persulfates show promise in in situ chemical oxidation (ISCO) for soil and groundwater remediation. Persulfates are known to have both reactivity and persistence in the subsurface, which can provide advantages over other oxidants inclined toward either of the two properties. Besides the ISCO applications, recent studies have shown that the persulfate oxidation also has the potential for wastewater treatment and disinfection. This article reviews the chemistry regarding the hydrolysis, photolysis and catalysis of persulfates and the reactions of persulfates with organic compounds in aqueous solution. This article is intended to provide insight into interpreting the behaviors of the contaminant oxidation by persulfates, as well as developing new persulfate-based oxidation technologies.

Study on High-Temperature Oxidation Behaviors of Plasma-Sprayed TiB2-Co Composite Coatings

  • Fadavi, Milad;Baboukani, Amin Rabiei;Edris, Hossein;Salehi, Mahdi
    • Journal of the Korean Ceramic Society
    • /
    • v.55 no.2
    • /
    • pp.178-184
    • /
    • 2018
  • In the present study, $TiB_2-Co$ composite coatings were thermally sprayed onto the surface of a 304 stainless steel substrate using an atmospheric plasma spray (APS). The phase analysis of the powders and plasma-sprayed coatings was performed using X-ray diffractometry analysis. The microstructures of the coatings were studied by a scanning electron microscope (SEM). The average particle size and flowability of the feedstocks were also measured. Both $TiB_2-32Co$ and $TiB_2-45Co$ (wt.%) coatings possessed typical dense lamellar structures and high-quality adhesion to the substrate. The oxidation behaviors of the coatings were studied at $900^{\circ}C$ in an atmospheric environment. In addition, the cross-sectional images of the oxidized coatings were analyzed by SEM. A thin and well-adhered layer was formed on the surface of both $TiB_2-Co$ coatings, confirming satisfactory high-temperature oxidation resistance. The kinetic curves corresponding to the isothermal oxidation of the coatings illustrated a short transient stage from rapid to slow oxidation during the early portion of the oxidation experiment.

Wet oxidation of polycrystalline $Ge_{0.2}Si_{0.8}$ (다결정 $Ge_{0.2}Si_{0.8}$의 습식 열산화)

  • 박세근
    • Electrical & Electronic Materials
    • /
    • v.8 no.1
    • /
    • pp.71-76
    • /
    • 1995
  • The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

  • PDF

Electrochemical Oxidation of Amoxicillin in Its Commercial Formulation on Thermally Prepared RuO2/Ti

  • Auguste, Appia Foffie Thiery;Quand-Meme, Gnamba Corneil;Ollo, Kambire;Mohamed, Berte;Sahi placide, Sadia;Ibrahima, Sanogo;Lassine, Ouattara
    • Journal of Electrochemical Science and Technology
    • /
    • v.7 no.1
    • /
    • pp.82-89
    • /
    • 2016
  • In this work, a ruthenium dioxide electrode has been prepared by thermal decomposition at 400 ℃ then used for the oxidation of commercial amoxicillin. The physical characterization showed that RuO2 electrode presents a mud cracked structure. Its electrochemical characterization has revealed an increase of the voltammetric charge in acid electrolyte compared to neutral electrolyte indicating the importance of protons in its surface redox processes. The voltammetric study of the oxidation of amoxicillin has been investigated. It has been obtained that the oxidation of amoxicillin is controlled by both adsorption and diffusion processes. Moreover, the oxidation of amoxicillin occurs via direct and indirect processes in free or electrolyte containing chlorides. Through preparative electrolysis, enhancement of amoxicillin oxidation was observed in the presence of chloride where the amoxicillin degradation yield reached more than 50 % compared to less than 5% in the absence of chlorides. Spectrophotometric investigations have revealed the degradation of intermediates absorbing at 350 nm.

A Study on characteristics of thin oxides depending on Si wafer cleaning conditions (Si기판 세정조건에 따른 산화막의 특성연구)

  • Jeon, Hyeong-Tak;Gang, Eung-Ryeol;Jo, Yun-Seong
    • Korean Journal of Materials Research
    • /
    • v.4 no.8
    • /
    • pp.921-926
    • /
    • 1994
  • The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

  • PDF

Role of oxygen in plasma induced chemical reactions in solution

  • Ki, Se Hoon;Uhm, Han Sup;Kim, Minsu;Baik, Ku Youn;Choi, Eun Ha
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.208.2-208.2
    • /
    • 2016
  • Many researchers have paid attention to the studies on the interaction between non-thermal plasma and aqueous solutions for biomedical applications. The gas composition in the plasma is very important. Oxygen and nitrogen are the main gases of interest in biological applications. Especially, we focus on the oxygen concentration. In this experiment, we studied the role of oxygen concentration in plasma induced chemical reactions in solution. At first, the amount of ions are measured according to changing the oxygen concentration. And we checked the relationship between these ions and pH value. Secondly, when the oxygen concentration is changed, it identified the type and amount of radical generated by the plasma. In order to confirm the effect of these chemical property change to biological material, hemoglobin and RBCs are chosen. RBCs are one of the common basic biological cells. Thirdly, when plasma treated according to oxygen concentration in nitrogen feeding gas, oxidation of hemoglobin and RBC is checked. Finally, membrane oxidation of RBC is measured to examine the relation between hemoglobin oxidation and membrane damage through relative hemolysis and Young's modulus. Our results suggest that reactive species generated by the plasma differsdepending on the oxygen concentration changes. The pH values are decreased when oxygen concentration increased. OH decrease and NO increase are also observed. These reactive species makes change of chemical properties of solution. We also able to confirm that the difference in these reactive species to affect the oxidation of the Hb and RBCs. The Hb and RBCs are more oxidized with the high oxygen concentration conditions. But membrane is damaged more by plasma treatment with only nitrogen gas. It is shown that red blood cells membrane damage and oxidation of hemoglobin are not directly related.

  • PDF