• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.254-256
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• 2007

The Solar energy is either used as a solar thermal energy or converted to electrical power through power conversion system. The latter method is defined as a solar cell changing the solar energy into the direct electric energy or power conversion that convert the dc power into ac power.For the solar cell to be a practical alternative energy, the study should be focused not only on the solar cell ,but also the power conversion system for common power source. In this study, we get the suitable power to common load ,using Ag Grid DSC(Dye-sensitized solar cell). Our purpose is to achieve the common solar cell power generation system ,using converter and PWM(Pulse width modulation) inverter system controled by DSP.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.4
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• pp.499-504
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• 2002

In this paper, we analyzed the performance of FH/CPFSK system with differential detection in thermal noise, partial-band jamming noise and adjacent interference of all eight bit pattern. The parameters to analize performances of FH/CPFSK system have been used the bit rate, modulation index and performances of FH/CPFSK system with the differential detector have been presented with the optimum correlation function. And, we were compared with performance of FH/CPFSK and FH/BFSK system. In result, we could know that bit error probability of the approximation equation and exact equation nearly accorded in the high signal-to-noise ratio. And, we have been proved that FH/CPFSK system with differential detection according to jamming fraction ${\gamma}$ was worst to 3dB than FH/CPFSK system with limiter-discriminator. but was superior to 2dB than FH/BFSK.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• Molecules and Cells
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• v.25 no.2
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• pp.242-246
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• 2008

To assess the role of $\alpha_{1G}$ T-type $Ca^{2+}$ channels in neuropathic pain after L5 spinal nerve ligation, we examined behavioral pain susceptibility in mice lacking $Ca_{V}3.1$ (${\alpha}_{1G}{^{-/-}}$), the gene encoding the pore-forming units of these channels. Reduced spontaneous pain responses and an increased threshold for paw withdrawal in response to mechanical stimulation were observed in these mice. The ${{\alpha}_{1G}}^{-/-}$ mice also showed attenuated thermal hyperalgesia in response to both low-(IR30) and high-intensity (IR60) infrared stimulation. Our results reveal the importance of ${\alpha}_{1G}$ T-type $Ca^{2+}$ channels in the development of neuropathic pain, and suggest that selective modulation of ${\alpha}_{1G}$ subtype channels may provide a novel approach to the treatment of allodynia and hyperalgesia.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.4 s.310
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• pp.21-29
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• 2006

A fuzzy ARTMAP neural network and a fuzzy ART neural network are proposed to identify $H_2S,\;NH_3$, and their mixtures and to estimate their concentrations, respectively. Features are extracted from a tin oxide gas sensor operated in a thermal modulation plan. After dimensions of the features are reduced by a preprocessing scheme, the features are fed into the proposed fuzzy neural networks. By computer simulations, the proposed method is shown to be fast in learning and stable in concentration estimating compared with other methods.

• Textile Coloration and Finishing
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• v.22 no.3
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• pp.181-186
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• 2010

A thermoresponsive poly(NIPAM-co-dye) labeled with benzopyran-based D-$\pi$-A type dye was prepared by typical radical copolymerization. It can be also constructed a acid/base-induced molecular switch by modulation of intramolecular charge transfer with protonation/deprotonation. The lower critical solution temperature behavior was investigated by means of UV-vis spectroscopy which allows the measurement of the phase transition from $25^{\circ}C$ to $45^{\circ}C$ in aqueous DMSO solution. The morphology of the internal microstructure of the poly(NIPAM-co-dye) hydrogel was observed by scanning electron microscopy. The reversible switch could be obtained by thermal and acid/base stimuli.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.322-327
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• 2012

The strain effects of ZnSe epilayer on ZnSe/GaAs heterojunction structure grown by molecular beam epitaxy have been investigated by using electroreflectance (ER) spectroscopy. The ER measurements were performed as a function of modulation voltage, dc bias voltage, and temperature. From the room temperature ER spectrum, we observed a heavy-hole (HH: 2.609 eV) and light-hole (LH: 2.628 eV) transitions due to a compressive strain. With increasing the bias voltage, the amplitude of HH transition signal decreased and the amplitude of LH transition signal was almost the same. From the temperature dependence of ER spectra, we have studied the interaction between the strain and the thermal expansion coefficient.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.76-87
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• 1993

We present a self-consistent, 2-dimensional solution of the Poisson and Sch rodinger equation based on the finite difference method with a nonuniform mesh size for a AlGaAs/GaInAs/GaAs HEMT devide. During the interative self-consistent calculation, however, we calculate Schrodinger equation only a some region of device, not a fully region in order to save the moemory and the speed-up of computation, and then use the approximated data for the other region using by a interpolation method with a given values. Also we adopt the proper matrix transformation method that allows preservation of the symmetric, form of the discretized Schrodinger equation, even with the use of a nonumiform mesh size, therefor, can reduce the computation time. We calculate the wavefunction, eigenstates and the electron concentration uat channel layer nder the thermal equilibrium and the biased conditions, respectively. Also,these parameters are used to solve 2-dimensional tdistribution of potential in he entire region of device. It is proved that the method is very efficient in finding eigenstages extending over relatively large spatial area without loss of accuracy. So, it can be used rather easily in any sarbitrary modulation doped utucture.

• Current Optics and Photonics
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• v.1 no.1
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• pp.65-72
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• 2017

We propose a nearly lossless, compact, electrically modulated vertical directional coupler, which is based on the controllable evanescent coupling in a previously proposed graphene-assisted total internal reflection (GA-FTIR) scheme. In the proposed device, two single-mode waveguides are separate by graphene-$SiO_2$-graphene layers. By changing the chemical potential of the graphene layers with a gate voltage, the coupling strength between the waveguides, and hence the coupling length of the directional coupler, is controlled. Therefore, for a properly chosen, fixed device length, when an input wave is launched into one of the waveguides, the ratio of their output powers can be controlled electrically. The operation of the proposed device is analyzed, with the dispersion relations calculated using a model of a one-dimensional slab waveguide. The supermodes in the coupled waveguide are calculated using the finite-element method to estimate the coupling length, realistic devices are designed, and their performance was confirmed using the finite-difference time-domain method. The designed $3{\mu}m$ by $1{\mu}m$ device achieves an insertion loss of less than 0.11 dB, and a 24-dB extinction ratio between bar and cross states. The proposed low-loss device could enable integrated modulation of a strong optical signal, without thermal buildup.