• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• Journal of IKEEE
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• v.27 no.1
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• pp.19-24
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• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.

• Advances in nano research
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• v.15 no.5
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• pp.385-399
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• 2023

Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.153-159
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• 2007

In-cryostat helium lines are under installation to transfer a cryogenic helium into cold components in KSTAR device. In KSTAR, three kinds of helium should be supplied into the cold components, which are supercritical helium Into superconduction(SC) magnet system, liquid helium into current lead system, and gas helium into thermal shields. Cryogenic helium lines consist of transfer lines outside the cryostat, in-cryostat helium lines, and electrical breaks. In-cryostat helium lines should be guaranteed of leak tightness for tong time operation at high internal helium pressure of 20 bar. We wrapped the helium line with multi-layer insulator(MLI) to reduce radiation heat and insulated the surface of the high potential part with prepreg tape. The electrical break was fabricated by brazing ceramic tube with stainless steel tube. To ensure the operation reliability at operation temperature, all the electrical break have been examined by the thermal cycle test at liquid nitrogen and by the hydraulic test at 30 bar. And additional surface insulation was prepared with prepreg tape to give structural safety. At present most of the in-cryostat helium lines have been installed and the final inspection test is progressing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.502-507
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• 2016

Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

• Journal of the Korean Society of Mechanical Technology
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• v.20 no.6
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• pp.763-769
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• 2018

In this research, in order to improve the heat retention of greenhouse, comparative analysis of the heat flux of the marketed multi-later insulating curtain was carried out. Experiments is conducted by fabricating a test apparatus for investigating the heat flux characteristics. The multi-later insulating curtain used for the experiment was compared using the P, N, S, U and T company, which are commercially available, and the heat flux due to temperature difference between the experimental apparatus and the outside was compared and analyzed. When the internal temperature of the experimental result is the maximum temperature $60^{\circ}C$, the heat flux of multi-later insulating curtain is T Co.($73.1W/m^2$) > S Co.($119.5W/m^2$) > U Co.($155W/m^2$) > N Co.($163.1W/m^2$) > P Co.($177.7W/m^2$). The heat flux means the quantity of heat passing through the unit time per unit area, and the higher the numerical value, the higher the quantity of heat passing through the multi-layer insulating curtain. This can be determined that high heat fluxes produce low heat resistance. Further, it has been found that the weight of the insulating curtain is largely unrelated to the heat insulating property, and the heat insulating curtain having a thickness containing a high internal air layer is excellent in the heat insulating property. In the future when manufacturing a heat insulating curtain, It is judged that it is desirable to manufacture a combination of heat insulating materials that contain a high internal air layer content and that can maintain the air layer even for long-term use while minimizing the volume.

• Journal of Bio-Environment Control
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• v.28 no.3
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• pp.273-278
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• 2019

The multi-layer insulating curtains used in the experiment was produced in six combinations using non-woven fabric containing aerogel and compared and analyzed by measuring heat flux and heat perfusion rates due to weight, thickness and temperature changes. Using silica aerogel, which have recently been noted as new material insulation, this study tries to produce a new combination of multi-layer insulating curtains that can complement the shortcomings of the multi-layer insulating curtains currently in use and maintain and improve its warmth, and analyze the thermal properties. The heat flux means the amount of heat passing per unit time per unit area, and the higher the value, the more heat passing through the multi-layer insulating curtain, and it can be judged that the heat retention is low. The weight and thickness of multi-layer insulation curtains were found to be highly correlated with thermal insulation. In particular, insulation curtains combined with aerogel meltblown non-woven fabric had relatively higher thermal insulation than insulation curtains with the same number of insulation materials. However, the aerogel meltblown non-woven fabric is weak in light resistance and durability, and there is a problem that the production process and aerogel are scattering. In order to solve this problems, the combination of expanded aerogel non-woven fabric and hollow fiber non-woven fabric, which are relatively simple manufacturing processes and excellent warmth, are suitable for use in real farms.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.