• 한국재료학회지
• /
• 제9권4호
• /
• pp.349-354
• /
• 1999

Dopant를 첨가하지 않은 시료와 donor dopant로 $CdI_2$를 첨가한 $Bi_2Te_3-10%$ 단결정을 Bridgman법으로 성장시키고 Hall 계수, 전하이동도, 전기비저향, Seebeck 계수, 열전도도 빛 성능지수를 77~600K의 온도범위에서 측정하였다. Dopant를 첨가하지 않은 90% $Bi_2Te_3-10% Bi_2Se_3$ 단결정에서 포화정공농도는 $5.85\times10_{18}cm^{-3}$ 이고 degenerate 온도는 127K 이었￡며, 전하 이동에 대한 산란인자는 -0.23 이고 전자이동도와 정꽁이동도의 비 ($\mu_e/\mu_h)$는 1.45 이었다. 90% $Bi_2Te_3-10% Bi_2Te_3$ 단결정의 OK 에서의 밴드갭 에너지는 0.200 eV 로서 $Bi_2Te_3-Bi_2Se_3$계 단결정에서눈 $Bi_2Se_3$의 놓도가 증가할수록 밴 드갭 에너지가 증가하였다. Donor dopant로 $CdI_2$를 첨가한 90% $Bi_2Te_3-Bi_2Se_3$ 조성의 n형 단결정에서 성능지수의 최대값은 $CdI_2$를 0.05 wt% 첨가한 경우에 약 230K에서 $3.2\times10^{-3}/K$를 나타내었다.

• Bulletin of the Korean Chemical Society
• /
• 제32권spc8호
• /
• pp.3081-3089
• /
• 2011

A series of new bis-thienylanthracene derivatives D1~D5 containing 9,10-antharcene moiety in the center and 2-methylenemalonotitrile or 2-cyanoacrylic acid functional group on the terminal thiophenes were synthesized and characterized by $^1H$-NMR and high-resolution mass spectroscopy. Their optical, electrochemical, and thermal properties were measured. They have absorption ${\lambda}_{max}$ in the range of 437~480 nm and max of $7.4{\times}10^3{\sim}2.0{\times}10^4M^{-1}cm^{-1}$. The substitution of 2-cyanoacrylic acid group allows greater value of ${\varepsilon}_{max}$ than that of 2-methylenemalonotitrile. TGA curves showed that D4 and D5 which have 2-cyanoacrylic acid functional group on the terminal thiophene(s) exhibit good thermal stability and D4 was thermally stable up to $400^{\circ}C$. Their optical properties and LUMO energy levels measured suggest that they can serve as potential candidates for electron donor materials of organic photovoltaic cells (OPVs) or D4 and D5 which contain 2-cyanoacrylic acid group can be used as organic dyes of dye-sensitized solar cells (DSSCs).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.73-73
• /
• 2011

We will report a few methods to improve the efficiency and stability in small molecule based organic solar cells, including the formation of bulk heterojunctions (BHJs) through alternative thermal deposition (ATD), the use of a micro-cavity structure and interface modifications. By ATD which is a simple modification of conventional thermal evaporation, the thicknesses of alternative donor and acceptor layers were precisely controlled down to 0.1 nm, which is critical to form BHJs. The formation of a BHJ in copper(II) phthalocyanine (CuPc) and fullerene (C60) systems was confirmed by AFM, GISAXS and absorption measurements. From analysis of the data, we found that the CuPc|C60 films fabricated by ATD were composed of the nanometer sized disk shaped CuPc nano grains and aggregated C60, which explains the phase separation of CuPc and C60. On the other hand, the co-deposited CuPc:C60 films did not show the existence of separated CuPc nano grains in the CuPc:C60 matrix. The OPV cells fabricated using the ATD method showed significantly enhanced power conversion efficiency compared to the co-deposited OPV cells under a same composition [1]. We will also present by numerical simulation that adoption of microcavity structure in the planar heterojunction can improve the short circuit current in single and tandem OSCs [2]. Interface modifications also allowed us to achieve high efficiency and high stability OSCs.

• 공업화학
• /
• 제3권3호
• /
• pp.422-429
• /
• 1992

본 연구는 고무와 황동피복 코드간의 접착력 향상을 위하여 사용되는 resorcinol formaldehyde(RF) resin과 hexamethoxymethylmelamine(HMMM)이 고무 컴파운드내에서 나타내는 morphology와 접착특성에 대하여 고찰하였다. 가황후 resin은 구형의 형태로 시편 전체에 고르게 분포되어 있었고 그의 입경은 약 $2000{\AA}$정도였다. 코드와 함께 가황시킨 시편에서 코드 주위에 존재하는 resin함량이 감소한 것으로 보아 resin이 코드쪽으로 이동이 있었던 것으로 생각된다. 또한 모듈러스는 methylene donor인 HMMM의 양이 많을수록 증가하였으며, 접착층이 더 두껍게 형성되었다. 접착력은 열 노화에 의하여 상실되며 이는 대부분 초기에 발생함을 알 수 있었다. 접착컴파운드에서 가장 유리한 RF resin과 HMMM의 비는 물성, 접착층의 안정성, 열노화특성 등을 고려할 때 1 : 0.9이었다.

• Transactions on Electrical and Electronic Materials
• /
• 제17권3호
• /
• pp.134-138
• /
• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.

• 공업화학
• /
• 제21권4호
• /
• pp.424-429
• /
• 2010

본 연구는 유기발광디바이스용(OLED) 녹색발광재료인 6-알킬-3-크로몬알데히드(2,2-디알킬)하이드라존 유도체의 합성에 관한 것으로서, 유도체들은 탈수축합반응으로 합성되었다. 이들은 전자흡인성의 6-알킬-3-크로몬알데히드류와 전자공여성의 2,2-디알킬하이드라존류의 공액구조를 가지고 있다. 합성된 물질들은 각각 FT-IR, $^1H$-NMR 스펙트럼으로부터 그의 구조적 특성을 확인하였고, 융점, 수득률에 의하여 열적 안정성, 반응성을 확인하였으며, 여기스펙트럼과 발광스펙트럼으로부터 자외가시광과 발광특성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.45-45
• /
• 2009

우리는 ZnO Template를 사용한 열기상법을 이용하여 수직 배양한 ZnO nanorods와 ZnO Nanopencils를 성장하였고, Dependency temperature Photoluminescence(PL)의 분석을 통하여 광학적 특성에 대해 분석을 하였다. ZnO 나노구조는 100K 이하의 온도에서 donor-bound exciton가 dominant하고, 100K 이상의 온도에서는 free exciton과 그들의 phonon-replica emission이 dominant한 것을 알 수 있었다. 하지만, ZnO nanorods와 nanopencils은 다른 exciton-phonon coupling의 strength에 의한 surface defects에 의해 excitonic emissions의 다른 거동을 보이는 것을 알았다. 이것으로 인해 상온 PL에서 ZnO nanopencil은 nanorods에 비해 52meV의 red shift를 보였다.

• Journal of Electrical Engineering and Technology
• /
• 제4권4호
• /
• pp.527-530
• /
• 2009

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
• /
• pp.17-21
• /
• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• 한국재료학회지
• /
• 제12권6호
• /
• pp.431-435
• /
• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.