• Journal of Welding and Joining
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• v.17 no.4
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• pp.46-52
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• 1999

Some of the pressurized reactor pressure vessels used in many chemical plants are made of low alloy carbon steel plates internally clad with an austenitic stainless steel for improved anti-corrosion properties. In this study, metallurgic structure of the weld interface of A 387 Grade12Class1 low alloy carbon steel claded with A182-F321 austenitic stainless steel after thermal exposure simulation heat treatment was investigated to display a characteristic behavior of dissimilar metal weld interface with thermal exposure during service at high temperature and pressure. EPMA, STEM, vickers-hardness test were performed and the results were correlated with the microstructure. To estimate the depth of the carburized/decarburized bands quantitatively, a model for carbon diffusion was proposed. The validity of the proposed theoretical relationships was confirmed by the directly measured data from the welded parts failed during service.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1371-1374
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• 2007

The velocity auto-correlation (VAC) function of liquid argon in the Green-Kubo formula decays quickly within 5 ps to give a well-defined diffusion coefficient because the velocity is the property of each individual particle, whereas the stress (SAC) and heat-flux auto-correlation (HFAC) functions for shear viscosity and thermal conductivity have non-decaying, long-time tails because the stress and heat-flux appear as system properties. This problem can be overcome through N (number of particles)-fold improvement in the statistical accuracy, by considering the stress and the heat-flux of the system as properties of each particle and by deriving new Green-Kubo formulas for shear viscosity and thermal conductivity. The results obtained for the transport coefficients of liquid argon obtained are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.106-109
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• 2016

The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.192-199
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• 2003

Film growth of InP and GaAs using TMIn, TMGa, TBAs and TBP is numerically predicted and compared to the experimental results. To obtain exact thermal boundary conditions at the reactor walls, the gas flow and heat transfer are analyzed for full three-dimensional reactor including outer tube as well as the inner reactor parts. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction since film deposition is mainly controlled by the temperature dependent diffusion. The results also show that thermal diffusion plays an important role in the upstream region.

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.868-874
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• 1998

An equivalent retention has been experimentally observed in thermal field-flow fractionation (ThFFF) for different polymer-solvent systems. It is shown that iso-retention between two sets of polymer-solvent systems can be obtained by adjusting the temperature difference (ΔT) according to the difference in the ratio of ordinary diffusion coefficient to thermal diffusion coefficient. This method uses a compensation of field strength (ΔT) in ThFFF at a fixed condition of cold wall temperature. It is applied for the calculation of molecular weight of polymers based on a calibration run of different standards obtained at an adjusted AT. The polymer standards used in this study are polystyrene (PS), polymethylmethacrylate (PMMA), and polytetrahydrofuran (PTHF). Three carrier solvents, tetrahydrofuran (THF), methylethylketone (MEK) and ethylacetate (ETAc) were employed. Though the accuracy in the calculation of molecular weight is dependent on the difference in the slope of log λ vs. log M which is related to Mark-Houwink constant a, it shows reasonable agreement within about 6% of relative error in molecular weight calculation for the polymer-solvent systems having similar a value.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Fire Science and Engineering
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• v.22 no.5
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• pp.43-47
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• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.