• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.53-58
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• 2013

KSTAR in-vessel cryo-pump has been installed in the vacuum vessel top and bottom side with up-down symmetry for the better plasma density control in the D-shape H-mode. The cryogenic helium lines of the in-vessel cryo-pump are located at the vertical positions from the vacuum vessel torus center 2,000 mm. The inductive electrical potential has been optimized to reduce risk of electrical breakdown during plasma disruption. In-vessel cryo-pump consists of three parts of coaxial circular shape components; cryo-panel, thermal shield and particle shield. The cryo-panel is cooled down to below 4.5 K. The cryo-panel and thermal shields were made by Inconel 625 tube for higher mechanical strength. The thermal shields and their cooling tubes were annealed in air environment to improve the thermal radiation emissivity on the surface. Surface of cryo-panel was electro-polished to minimize the thermal radiation heat load. The in-vessel cryo-pump was pre-assembled on a test bed in 180 degree segment base. The leak test was carried out after the thermal shock between room temperature to $LN_2$ one before installing them into vacuum vessel. Two segments were welded together in the vacuum vessel and final leak test was performed after the thermal shock. Commissioning of the in-vessel cryo-pump was carried out using a temporary liquid helium supply system.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.1
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• pp.36-39
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• 1980

Studies have been perfor mad on the normalization of V-I characteristics, the dependence of current runaway on the applied step voltage and the analysis of the current channet in the sintered 5Fe$_2$O$_3$-5Bi$_2$O$_3$. From the measurement of snitching Properties of the sintered 5Fe$_2$O$_3$-5Bi$_2$O$_3$, it is exe]twined that the electrical switching mechanism is that of thermal ionic breakolown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.51-51
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.145-148
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• 1998

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.40-45
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• 2006

Electrical insulation is one of the most important parts in a high voltage apparatus. Traditionally mineral oils and synthetic esters have been widely used as dielectric coolants for power transformers. Recently, researchers are interested in the environmentally friendly vegetable oil from the environmental viewpoint. This paper reports on the synthesis and characterization of soybean based ester oils. Two different types of soybean based transformer oils, named as methyl ester and isopropyl ester were synthesized. The synthesis of these esters was achieved by transesterification reactions between soybean oil and alcohol in the presence of catalyst. The GC and NMR spectroscopic analysis of the esters have been performed. It was observed that isopropyl ester has better thermal resistance than methyl ester by TGA. Also, two esters have a good breakdown voltage and electrical resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.81-81
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• 2010

This paper presents results of experimental investigations on natural ester regarding the breakdown strength. Aging of insulating material in a pole transformer has been studied by performing accelerated thermal aging test. Sealed aging test vessels containing copper, laminated core, Krapt paper and insulating oil(Natural oil and Mineral oil) were aged at $140^{\circ}C$ for 30days. Compared to the conventional transformer oil, electric property of the natural ester fluid is excellent.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1249-1250
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• 2015

We report a plasma-on-a-chip (POC) which provides a non-thermal atmospheric plasma for superbacteria infection treatment A three-electrode configuration allows an initiation carrier injection prior to a primary discharge, leading to a significant reduction in a breakdown voltage. A stable non-thermal argon plasma is generated using a pulsed glow discharge and inactivation of anti-biotic resistant bacteria, for example MRSA, is successfully demonstrated by exposing the bacteria to the argon plasma in a couple of minutes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1041-1047
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• 2001

In this paper, reduction characteristics of the ac flashover voltage in the horizontal air gap of sphere-sphere/needle-needle electrode system were investigated when the combustion flame was present near the high-voltage electrodes. The voltage and current waveforms were measured, when the flashover is occurred, in order to examine the flashover polarity by flame. The reduction characteristics of ac flashover voltage were discussed with the thermal ionization process, the relative air density and the deflection phenomena in the shape of flames that changed by the corona wind and coulomb\`s force. As the results of an experimental investigation, It was found that the reduction of flashover voltages in sphere-sphere system, in comparison with the no-flame case, are 79.9 [%] for k=0, 82.9 [%] for k=0.5, 87.5 [%] for k=1.0, 85.0 [%] for h=0 [cm], 40.8 [%] for h=5 [cm] and 28.2 [%] for h=9 [cm] when ac voltage is applied.