• Title/Summary/Keyword: thermal anneal

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Effect of a seed layer on atomic layer deposition-grown tin oxide

  • Choi, Woon-Seop
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.128-128
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    • 2009
  • The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

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Inversion of Geophysical Data via Simulated Annealing (아닐링법에 의한 지구물리자료의 역산)

  • Kim, Hee Joon
    • Economic and Environmental Geology
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    • v.28 no.3
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    • pp.305-309
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    • 1995
  • There is a deep and useful connection between thermodynamics (the behavior of systems with many degrees of freedom in thermal equilibrium at a finite temperature) and combinational or continuous optimization (finding the minimum of a given multiparameter function). At the heart of the method of simulated annealing is an analogy with the way that liquids freeze and crystallize, or metals cool and anneal. This paper provides a detailed description of simulated annealing. Although computationaly intensive, when it is carefully implemented, simulated annealing is found to give superior results to more traditional methods of nonlinear optimization.

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Electrical Properties of Nickel Polycide Gate (니켈 폴리사이드 게이트의 전기적 특성)

  • 정연실;김시중;김주연;배규식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.449-452
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    • 1999
  • NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

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Investigation of Ni Silicide formation at Ni/Cu/Ag Contact for Low Cost of High Efficiency Solar Cell (고효율 태양전지의 저가화를 위한 Ni/Cu/Ag 전극의 Ni Silicide 형성에 관한 연구)

  • Kim, Jong-Min;Cho, Kyeong-Yeon;Lee, Ji-Hun;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.230-234
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    • 2009
  • It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

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Evaluation of SGOI wafer with different concentrations of Ge using pseudo-MOSFET (Pseudo-MOSFET을 이용한 SiGe-on-SOI의 Ge 농도에 따른 기판의 특성 평가 및 열처리를 이용한 전기적 특성 개선 효과)

  • Park, Goon-Ho;Jung, Jong-Wan;Cho, Won-Ju
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.156-159
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    • 2008
  • The electrical characteristic of SiGe-on-SOI (SGOI) wafer with different Ge concentration were evaluated by pseudo-MOSFET. Epitaxial SiGe layers was grown directly on top of SOI with Ge concentrations of 16.2, 29.7, 34.3 and 56.5 at.%. As Ge concentration increased, leakage current increased and threshold voltage shifted from 3 V to 7 V in nMOSFET, from -7 V to -6 V in pMOSFET. The interface states between buried oxide and top of Si was significantly increased by the rapid thermal annealing (RTA) process, and so the electrical characteristic of SGOI wafer degraded. On the other hand, additional post RTA annealing (PRA) showed that it was effective in decreasing the interface states generated by RTA processes and the electrical characteristic of SGOI wafer enhanced higher than initial state.

Characteristics of $TiN/TiSi_2$ Contact Barrier Layer by Rapid Thermal Anneal in $N_2$ Ambient (질소 분위기에서 순간역처리에 의해 형성시킨 $TiN/TiSi_2$ Contact Bsrrier Lauer의 특성)

  • 이철진;허윤종;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.6
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    • pp.633-639
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    • 1992
  • The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

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A Study on the Properties of TiN/${TiSi}_{2}$ Bilayer by a Rapid Thermal Anneal in ${NH}_{3}$ Ambient (${NH}_{3}$ 분위기에서 급속열처리에 의한 TiN/${TiSi}_{2}$ 이중구조막의 특성에 대한 고찰)

  • 이철진;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.8
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    • pp.869-874
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    • 1992
  • The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

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Structural evolution and electrical property of RF sputter-deposited ZnO:Al film by rapid thermal annealing process (RF sputter로 증착된 ZnO:Al 박막의 Rapid Thermal Annealing 처리에 따른 구조개선 및 전기적 특성)

  • Park, Kyeong-Seok;Lee, Kyu-Seok;Lee, Sung-Wook;Park, Min-Woo;Kwak, Dong-Joo;Lim, Dong-Gun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.466-467
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    • 2005
  • Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

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Thermal Recovery Behaviors of Neutron Irradiated Mn-Mo-Ni Low Alloy Steel (중성자에 조사된 Mn-Mo-Ni 저합금강의 열처리 회복거동)

  • Jang, Gi-Ok;Ji, Se-Hwan;Sim, Cheol-Mu;Park, Seung-Sik;Kim, Jong-O
    • Korean Journal of Materials Research
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    • v.9 no.3
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    • pp.327-332
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    • 1999
  • The recovery activation energy, the order of reaction and the recovery rate constant were detemined by isochronal and isothermal annealing treatment to investigate the recovery behaviors of neutron irradiated Mn-Mo-Ni low alloy steels$(fluence: 2.3\times10^{19}ncm^{-2}, 553K, E\geq1.0 MeV)$. Vickers microhardness tests were conducted to trace the recovery behavior after heat treatments. The results were analyzed in terms of recovery stages, behavior of responsible defects and recovery kinetics. It was shown that recovery occurred through two annealing stages(stage I : 703-753K, stage n : 813-873K) with re$\infty$very activation energies of 2.5 eV and 2.93 eV for each stage I and n, respectively. From the comparison of unirradiated and irradiated isochronal anneal curves, a radiation anneal hardening(RAH) peak was identified at around 813K. Most of recovery have occurred during about 120 min irrespective of isothermal annealing temperatures of 743K and 833K. Recovery rate constants were determined to be $3.4\times10^{-4}min^{-1} and 7.1\times10^{-4}min^{-1}$ for stage I and II, respectively. The order of reaction was about 2 for both recovery stages. Comparing the obtained data with those of previously reported results on neutron irradiated Mn- Mo- Ni steels, the thermal recovery be­havior of the present material seems to occur by the dissociation of point defect clusters formed during irradiation, and by the recombination process of self-interstitials and vacancies from dissociated vacancy clusters.

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A Study on the Thermal Characteristics of a 10 cm-diameter substrate for TMR devices by FLA Method (선형가열 법에 따른 TMR 소자용 직경 10cm 기판의 열적 특성에 관한 연구)

  • 송오성;이영민;주영철
    • Journal of the Korean Magnetics Society
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    • v.11 no.2
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    • pp.78-83
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    • 2001
  • The thermal characteristics of TMR devices by using Fast Linear Annealing method has been studied. A computer program that employs the finite differential method has been developed to simulate the temperature distribution of a diameter of 4" silicon wafer, which is subjected to radiation heat from the halogen lamp. We adopted the temperature of 350$\^{C}$, which is the highest temperature usually used in annealing for magnetic thin films. We changed moving velocity of the lamp from 0.05 mm/sec to 1 mm/sec. The moving velocity of halogen lamp has less effect on the local peak temperature of the sample only about 40$\^{C}$. Therefore, we may be able to anneal TMR devices in such short time of 1 minute and 40 seconds per one wafer, using the Fast Linear Annealing method.

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