• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.251-255
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• 2007

We made $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) composite thick film with a high dielectric constant and low loss by the hand casting method. Dielectric constant and dielectric loss of prepared thick film are measured at 1MHz and curing behavior of the film are observed through thermal analysis such as DSC. We investigated the effect of contents of BNT filler and curing behavior of film on dielectric properties of BCB-BNT composite. Dielectric constant increased with increasing BNT filler from 20 to 50 vol% and dielectric loss ($tan{\delta}$) decreased with increasing BNT filler. Dielectric constant and loss ($tan{\delta}$) of composite material was not nearly dependent on the curing behavior. But as a result of TCC (Temperature Characteristics of Coefficient) decreased with increasing the curing temperature, we confirmed that the curing of these composite system is most stable above $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Applied Science and Technology
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• v.33 no.2
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• pp.247-254
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• 2016

Since microzirconia has excellent thermal and mechanical properties with high chemical and electrical resistance, it can be used in various fields. When the surface of zirconia becomes hydrophilic, its dispersibility in water will be improved as well as the resistance to most hydrophobic contaminants will be increased. In this study, we investigated the introduction of a hydrophilic groups on the microzircornia surface through hydrolysis and condensation reactions with two different silanes containing hydrophilic functional groups, such as ${\gamma}$-aminopropyltrimethoxysilane (APS) and ${\gamma}$-ureidopropyltrimethoxysilane (UPS) at different pH and concentration conditions. A covalent bond formation between the surface hydroxyl groups of zirconia and that of hydrolyzed silanes was confirmed by ninhydrin test and FT-IR spectroscopy. However, the presence of Si on the surfaces of both silane modified microzirconias was unable to detect by SEM/EDS technique. In addition, particle size analysis results provide that the size of microzirconia was changed to smaller or bigger than that of original zirconia due to crushing and aggregation during the modification process. The water dispersibility was improved for only APS modifed zirconia (AS-2 and AS-3) under neutral pH condition, but the water dispersibility and stability for all cases of 0.5~2% UPS modifed zirconia (US series) were much improved.

• Applied Chemistry for Engineering
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• v.4 no.4
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• pp.721-730
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• 1993

Various catalysts of $Cu_xH_3-{_{2x}}PMo_{12}O_{40}{\cdot}_nH_2O$ with different x-values have been prepared and characterized by thermal analysis, X-ray powder diffraction, infrared spectroscopy, BET surface-area measurement, electron microscopy, and temperature programmed desorption of ammonia. The properties of these catalysts in acrolein oxidation have been investigated in a continuous-flow fixed-bed reactor. The catalysts lost their water of crystallization at about $200^{\circ}C$ and their constitutional water between 300 and $400^{\circ}C$. The Keggin structure of the catalysts was identified by infrared spectroscopy. The decomposition of Keggin anion, $(PMo_{12}O_{40})^{3-}$, was increased with the increase of substituted copper content and identifiable $MoO_3$ and $P_2O_5$ as decomposition products were observed. The conversion of acrolein decreased with the increase of x probably due to the decrease of specific surface area and of total amount of acid sites. But specific reaction rate and selectivity to acrylic acid were maximized at x=1.0, and it showed specific acid site distributions.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.252-258
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• 2002

Transparent $TiO_2$ thin films prepared by sol-gel process using the modification of titanium(IV) alkoxide showed improved thermal stability and high refraction index. Compared to the pure $TiO_2$ film, the modified $TiO_2$ films show the increased index of refraction under proper condition at pH 2.5. Transparency of these $TiO_2$ thin films were more than 80% in the visible region. It has been demonstrated that the reaction occurs in the amorphous phase: an exchange of phase results in anatase before and after 400$^{\circ}C$, in rutile over 700$^{\circ}$C form the XRD results. The particle sizes, shapes and structures of these nanoclusters in the $TiO_2$ films have been identified through a SEM and XRD. The physical properties and structures of their powders have also been studied through a SEM, XRD, TGA and DSC. The thickness and index of refraction have been determined by the analysis of ellipsometric spectra.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.11 no.4
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• pp.103-112
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• 1991

In this study, a numerical model was established and applied to simulate the steady-state groundwater and heat flow in an isotropic, heterogeneous, three dimensional aquifer system with uniform thermal properties and no change of state. This model was developed as an aid in screening large groundwater-flow systems as prospects for underground waste storage. Driving forces on the system are external hydrologic conditions of recharge from precipitation and fixed hydraulic head boundaries. Heat flux includes geothermal heat-flow, conduction to the land surface, advection from recharge, and advection to or from fixed-head boundaries. The model uses an iterative procedure that alternately solves the groundwater-flow and heat-flow equations, updating advective flux after solution of the groundwater-flow equation, and updating hydraulic conductivity after solution of the heat-flow equation. Dierect solution is used for each equation. Travel time is determined by particle tracking through the modeled space. Velocities within blocks are linear interpolations of velocities at block faces. Applying this model to the groundwater-flow system located in Jigyung-ri. Songla-myun, Youngil-gun. Kyungsangbuk-do, the groundwater-flow system including distribution of head, temperature and travel time and flow line, is analyzed.

• Journal of the Korean Wood Science and Technology
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• v.10 no.3
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• pp.180-188
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• 1982

This study was carried out to make hardboard fire retardants and to examine the properties of the hard-board treated with them. The fire retardant treatment was achieved by surface impregnation of water soluble retardant chemicals into the forming mat with 55 percent of moisture content. followed by the hot pressing process. Ammonium monophosphate, ammonium diphosphate, sodium borate, and boric acid were used as the fire retardants. Fire retardant test was carried out by using the differential thermal analysis thermogram. The results are summarized as follows: 1. Fire retardant-treated hardboard showed higher values of the specific gravity. water absoption, and flexural strength than those of untreated hardboard. Especially, the treatment of ammonium monophosphate gave the best results in the flexural strength, and a 10 gr/$ft^2$ loading of the fire retardant compound of ammonium monophoshate, ammonium diphosphate, and sodium borate drew the best flexural strength value among the three different experimental loadings of 10, 20 and 30 gr/$ft^2$. 2. There were no definite differences in moisture content between the fire retardant-treated hardboard and the untreated hardboard. 3. The fire retardant compound of ammonium monophosphate, ammonium diphosphate, and sodium borate resulted in the best fire retardancy, and its fire retardancy was increased in proportion to the increase of loading.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.733-740
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• 2016

$Al_2O_3$ nanosol dispersed under ethanol or N-Methyl-2-pyrrolidone(NMP) was studied and optimized with various dispersion factors and by utilizing the silane modification method. The two kinds of $Al_2O_3$ powders used were prepared by thermal decomposition method from aluminum ammonium sulfate$(AlNH_4(SO_4)_2)$ while controlling the calcination temperature. $Al_2O_3$ sol was prepared under ethanol solvent by using a batch-type bead mill. The dispersion properties of the $Al_2O_3$ sol have a close relationship to the dispersion factors such as the pH, the amount of acid additive(nitric acid, acetic acid), the milling time, and the size and combination of zirconia beads. Especially, $Al_2O_3$ sol added 4 wt% acetic acid was found to maintain the dispersion stability while its solid concentration increased to 15 wt%, this stability maintenance was the result of the electrostatic and steric repulsion of acetic acid molecules adsorbed on the surface of the $Al_2O_3$ particles. In order to observe the dispersion property of $Al_2O_3$ sol under NMP solvent, $Al_2O_3$ sol dispersed under ethanol solvent was modified and solvent-exchanged with N-Phenyl-(3-aminopropyl)trimethoxy silane(APTMS) through a binary solvent system. Characterization of the $Al_2O_3$ powder and the nanosol was observed by XRD, SEM, ICP, FT-IR, TGA, Particles size analysis, etc.