• 제목/요약/키워드: the source materials

검색결과 3,052건 처리시간 0.031초

Protective SiC Coating on Carbon Fibers by Low Pressure Chemical Vapor Deposition

  • Bae, Hyun Jeong;Kim, Baek Hyun;Kwon, Do-Kyun
    • 한국재료학회지
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    • 제23권12호
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    • pp.702-707
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    • 2013
  • High-quality ${\beta}$-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense ${\beta}$-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane ($SiH_4$) and acetylene ($C_2H_2$) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of ${\beta}$-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free ${\beta}$-SiC coating layers are crystallized in ${\beta}$-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

수소 환원기체와 (hfac)Cu(3,3-dimethyl-1-butene) 증착원을 이용한 Pulsed MOCVD로 Cu seed layer 증착 특성에 미치는 영향에 관한 연구 (Pulsed MOCVD of Cu Seed Layer Using a (hfac)Cu(3,3-dimethyl-1-butene) Source and H2 Reactant)

  • 박재범;이진형;이재갑
    • 한국재료학회지
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    • 제14권9호
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    • pp.619-626
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    • 2004
  • Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

비소 고상확산방법을 이용한 MOSFET SOI FinFET 소자 제작 (Fabrication of SOI FinFET devices using Aresnic solid-phase-diffusion)

  • 조원주;구현모;이우현;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.133-134
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

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Microchannel plates for field emission displays

  • Sunghwan Jin;Yu, Se-Gi;Jungna Heo;Taewon Jeong;Lee, Junghee;Whikun Yi;Park, Yongsoo;Kim, Jongmin
    • Journal of Korean Vacuum Science & Technology
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    • 제4권4호
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    • pp.93-96
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    • 2000
  • Microchannel plates (MCPs) have been developed by introducing new materials and process technologies. Main body was made of alumina by programmable punching, laminating, and firing. The channel walls of pore arrays of an MCP were deposited with thin films by electroless copper plating and sol-gel process. Our MCP has advantages such as easy fabrication, durability, high temperature endurance, and applicability to the large size comparing with the conventional MCPs. Experiments on the brightness of an MCP incorporated FED revealed that the FED with a MCP is three to four times brighter than a conventional FED. Moreover, the focusing in a FED is improved. Incorporating an MCP into a FED is one of promising methods to enhance the characteristics of the FED. In addition, amplification yield of the MCP is measured for varying the aspect ratio and the input current.

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발전소 환경소음 예측 (Environmental Noise Prediction of Power Plants)

  • 조대승;유병호
    • 소음진동
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    • 제7권4호
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    • pp.621-629
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    • 1997
  • For computer aided design and costruction of low noisy power plants, indoor and outdoor noise prediction program has been developed. The program utilizes the predefined data of noise sources and building materials and has the faculty to estimate the source level using the empirical formula in case of the measured data not being available. In the noise prediction, the mutual noise propagation between indoor and outdoor sites are considered. The outdoor noise source in the calculation of geometric divergence effects is modelled as the omni-directional finite line or planar source according to the source geometry and the receiving points. Outdoor noise prediction is carried out to consider the diffraction effect due to plant structures as well as the attenuation effect due to atmospheric absorption and soft ground. The results of indoor and outdoor noise prediction for a recently constructed diesel engine power plant show good agreement with the measured.

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$HfO_2$ dielectrics를 이용한 reactive sputtering TaN gate electrode 의 특성분석 (Characterization of reactive sputtering TaN fate electrode on $HfO_2$ dielectrics)

  • 김영순;이태호;안진호
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.185-190
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    • 2003
  • 고유전물질인 $HfO_2$ 극박막에 사용될 TaN metal 전극에 대한 특성에 대한 연구를 하였다. 고유전물질인 $HfO_2$는 4" p-type wafer를 SCI cleaning후 ALD(atomic layer deposition)을 통해 $50\AA$를 증착하였다. Ff source는 TEMAH를 이용하였으며 Oxygen source는 $H_2O$를 이용하였다. 이렇게 증착한 $HfO_2$ 극박막에 Ta target을 이용하여 질소 가스를 Ar가스에 첨가하여 reactive sputtering을 통해서 TaN 전극을 증착하였다. TaN 박막의 증착두께는 a--step과 TEM을 통해서 확인하였으며 면저항은 four point probe를 이용하여 측정하였다. 이렇게 증착된 $HfO_2/TaN$구조에 대한 전기적 특성을 측정하였다.

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저 에너지 표면 개질 이온원이 설치된 진공 웹 공정을 이용한 2층 flexible copper clad laminate 제작 (Fabrication of 2-layer Flexible Copper Clad Laminate by Vacuum Web Coater with a Low Energy Ion Source for Surface Modification)

  • 최형욱;박동희;최원국
    • 한국재료학회지
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    • 제17권10호
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    • pp.509-515
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    • 2007
  • In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

ZTO/Ag/ZTO 다층 투명 전극 및 이를 이용한 투명 트랜지스터 특성 연구

  • 최윤영;최광혁;김한기
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.61.1-61.1
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    • 2011
  • 본 연구에서는 Zinc Tin Oxide (ZTO)/Ag/ZTO 다층 투명 전극을 제작하고 이를 비정질 ZTO (a-ZTO) 채널을 기반으로 한 TFT에 적용하여 투명 TFT의 전기적 특성을 확인하였다. 15${\times}$15 mm 크기의 ITO (gate)/Glass 기판상에 ALD법으로 투명 $Al_2O_3$절연층을 형성하고, RF sputtering법으로 50nm 두께의 a-ZTO 채널층을 형성하였다. 열처리를 위하여 Hot plate를 이용해 대기 중에서 $300^{\circ}C$의 온도로 20분간 열처리하여 채널 특성을 최적화 하였다. 이후 투명 Source/Drain으로 ZTO/Ag/ZTO 다층 투명 전극을 DC/RF sputtering법으로 패터닝하여 투명 TFT를 완성하였고, 평가를 위해 금속 (Mo)을 Source/Drain으로 사용한 TFT를 제작하여 그 성능을 비교하였다. ZTO/Ag/ZTO 다층 투명 전극은 Ag의 삽입으로 인하여 3.96ohm/square의 매우 낮은 면저항과 $3.24{\times}10-5ohm-cm$의 비저항을 나타내었으며, Antireflection 효과에 의해 가시광선 영역 (400~600 nm)에서 86.29%의 투과율을 나타내었다. ZTO/Ag/ZTO 다층 투명 전극 기반 투명 TFT는 $6.80cm^2/V-s$의 이동도와 $8.2{\times}10^6$$I_{ON}/I_{OFF}$비를 나타내어 금속 Source/Drain 전극에 준하는 특성을 나타내었다. 뿐만 아니라 전체 소자의 투과도 또한 ~73.26% 수준을 나타내어 투명 TFT용 Source/Drain 전극으로서 ZTO/Ag/ZTO 다층 투명 전극의 가능성을 확인하였다.

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강천산(전북.순창)의 자원식물상 연구 (A Floristic Study of the Economic Plants in Mt. Gangcheon(Sunchang-gun Jeollabuk- do))

  • 김중현;윤창영
    • 한국자원식물학회지
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    • 제20권5호
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    • pp.409-423
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    • 2007
  • 2005년 3월부터 11월까지 전북 강천산 군립공원에 자생하는 유관속식물을 대상으로 조사한 결과 조사지역내에 분포하는 식물은 97과 253속 328종 45변종 6품종 등 총 379분류군으로 관찰되었다. 조사 지역에서 분포하고 있는 379종류의 식물자원의 유용도를 분석한 결과 총 315종류의 자원식물로 분류되었으며, 식용자원(E)은 161종류(51.1%), 초지자원(P)은 121종류(38.4%), 약용자원(M)은 147종류(46.6%), 관상자원(O)은 82종류(26.0%), 목재자원(T)은 11종류(3.4%), 공업원료자원(I)은 14종류(4.4%)로 나타났다. 한국특산식물은 14과 16속 16분류군으로 조사지역내 분포하는 총 379분류군 중 약 4.2%이었으며, 특정식물 중 $III{\sim}V$등급 식물은 9과 9속 9분류군으로 소산식물 379분류군의 약 2.3%로 나타났으며, 진화식물은 11과 15속 14종 1변종의 15분류군으로 우리나라 전체 귀화식물 225 종류의 6.7%에 해당되었다.

이송속도 조절에 의한 평판 레이저 보조가공의 이동 열원해석 (Analysis of Moving Heat Source for Laser Assisted Machining of Plate by Feed Rate Control)

  • 김광선;이춘만
    • 한국정밀공학회지
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    • 제28권12호
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    • pp.1341-1346
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    • 2011
  • Currently, many researches are carried out for laser assisted machining, which is one of the important fields in materials difficult to process. However, a prediction of heat source is difficult because of moving heat source. In this paper, a thermal analysis of laser assisted machining of plate by change of heat source size is performed, and preheating temperature by adjusting the feed rate is controlled. It was recognized that the maximum preheating temperature increases according to the decrease in heat source size, and feed rate need to adjust as high speed. The results of this analysis can be used as a reference for preheating temperature prediction in laser assisted milling.