• 한국재료학회지
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• 제22권7호
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.292-293
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• 2006

We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.214-219
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• 2000

In this paper the structural dielectric and piezoelectric properties of Pb［(M $g_{1}$2// $W_{1}$2/)$_{x}$-(N $i_{1}$3//N $b_{2}$3/)$_{0.15-x-(Zr_{0.5})}$ $Ti_{0.5}$)$_{0.85}$］ $O_3$ (x=0.0~0.10) ceramic were investigated with the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$. According to the substitution of Pb(M $g_{1}$2//W/1/2/) $O_3$ curie temperatures were slightly decrease due to the decrease of the tetrag-onality of crystal structure and coercive fields were decreased. Up to the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ 3mol%,remnant polarization dielectric constant piezoelectric constant were increased. Dielectric constant and electro-mechanical coupling factor( $k_{p}$, $k_{31}$ ) were appeared the highest value of 2230, 0.64, and 0.38 and piezoelectric constant( $d_{33}$ , $d_{31}$ ) was the largest value of 418, 202($\times$10$^{-12}$ /C/N), respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/N) respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ was 3mol%.s 3mol%.%.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.74-75
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• 2006

We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.348-351
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• 2007

Recently, Nanotechnology becomes a major issue in most part of industries. Nanotechnology is expected to develop various application products due to nano material mired composites is improved physical and electrical properties compared to conventional composites materials. Dielectric and insulation materials need to develop and improve like other field about nanotechnology. In this paper, we reported dielectric dispersion by size(no filler, $1.2{\mu}m$, 500 nm, 10 nm), frequencies(60, 120, 1 kHz), and temperatures($30{\sim}170^{\circ}C$). Dielectric constant of composites materials with filler shows higher than composites materials without filler and increased depending on rising temperatures in low frequency region. It was the effect that nano-filler and impurities in composites contributed to electrical conductivity. And dielectric properties depending on temperatures shows to change in low frequency region dramatically We analyzed interfacial polarization in low frequency region($10^{-2}$ Hz) and oriented polarization in high frequency region($10^{-5{\sim}6}$ Hz) on composites materials.

• 폴리머
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• 제24권5호
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• pp.713-720
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• 2000

수평균 중합도 900 및 교대배열기 함량 63.1%의 교대배열 poly(vinyl alcohol) (s-PVA)을 사용하여 s-PVA/요오드계 편광필름을 제조하였다. 흔성배열 PVA/요오드계 필름과 비교할 때 편광도는 자연신비에서도 99% 이상의 값을 가짐으로써 향상된 결과를 보였으나 투과도는 약간 저하되는 경향을 보였다. 따라서 침지액의 요오드 농도를 보다 낮추고 4배의 연신비를 유지함으로써 우수한 투과도와 편광도를 가지는 필름을 제조할 수 있었다. 한편, s-PVA/요오드 필름의 열수하에서의 탈착은 현저히 억제되었다. 결정화도, (100)면의 결정크기 및 면간거리가 조금씩 감소하거나 더 이상 증가하지 않는 것으로부터 침지시간 초기에는 요오드가 주로 결정영역에서 복합체를 형성하고, 이후에는 주로 결정면 밖에서 복합체를 형성하거나 단순한 물리적인 흡착을 이루고 있음을 확인하였다.