• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.948-952
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• 2001

PZT thick films were fabricated on alumina substrates by a screen printing method. They were sintered at $750^{\circ}C{\sim}1050^{\circ}C$ for 1 h under air or Pb atmosphere. Pyrochlore was observed as a second phase in PZT thick films sintered in air at temperatures of $950^{\circ}C$ and higher. PZT thick films sintered under Pb atmosphere showed denser microstructure, higher dielectric constant, and better-developed P-E hysteresis curve than the films sintered in air. PZT thick films sintered at $900^{\circ}C$ under Pb atmosphere showed the typical ferroelectric hysteresis with remanent polarization of $29.8{\mu}C/cm^2$ and coercive field of 48.4 kV/cm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.7
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• pp.81-88
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• 2004

In case of mechanical down tilting, a horizontal pattern is distorted and beam width widens whenincreasing tilt angle, which causes an expansion of hand off region and burden base station equipment. In contrast, electrical down tilting has advantage that horizontal HPBW is kept constant with down tilting. In this paper, based on a phased array technology, dual polarized base station antenna with electrical down tilting was developed at 800MHz band. The antenna has down tilting range of 0$^{\circ}$ to 14$^{\circ}$, and 15㏈i gain. We use stacked microstrip patch as a radiated element and apply balanced feed technique to improve isolation between ports and discrimination of cross polarization. The effect of electrical down tilting was verified by field test.

• Progress in Medical Physics
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• v.9 no.1
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• pp.11-21
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• 1998

Circular metal electrodes were vacuum-deposited with chromium on the both sides of Teflon-FEP and PET film characteristic of electret and the physical properties of the two polymers were observed during an irradiation by gamma-ray from $\^$60/Co. With the onset of irradiation of output 25.0 cGy/min the induced current increased rapidly for 2 sec, reached a maximum, and subsequently decreased. A steady-state induced current was reached about in 60 second. The dielectric constant and conductivity of Teflon-FEP were changed from 2.15 to 18.0 and from l${\times}$l0$\^$-17/ to 1.57${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/, respectively. For PET the dielectric constant was changed from 3 to 18.3 and the conductivity from 10$\^$-17/ to 1.65${\times}$10$\^$-13/ $\Omega$-$\^$-1/cm$\^$-1/. The increase of the radiation-induced steady state current I$\^$c/, permittivity $\varepsilon$ and conductivity $\sigma$ with output(4.0 cGy/min, 8.5 cGy/min, 15.6 cGy/min, 19.3 cGy/min) was observed. A series of independent measurements were also performed to evaluate reproducibility and revealed less than 1% deviation in a day and 3% deviation in a long term. Charge and current showed the dependence on the interval between measurements, the smaller the interval was, the bigger the difference between initial reading and next reading was. At least in 20 minutes of next reading reached an initial value. It may indicate that the polymers were exhibiting an electret state for a while. These results can be explained by the internal polarization associated with the production of electron-hole pairs by secondary electrons, the change of conductivity and the equilibrium due to recombination etc. Heating to the sample made the reading value increase in a short time, it may be interpreted that the internal polarization was released due to heating and it contributed the number of charge carriers to increase when the samples was again irradiated. The linearity and reproducibility of the samples with the applied voltage and absorbed dose and a large amount of charge measured per unit volume compared with the other chambers give the feasibility of a radiation detector and make it possible to reduce the volume of a detector.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.56-62
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• 1997

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

• Korean Journal of Remote Sensing
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• v.27 no.2
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• pp.191-201
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• 2011

Soybean has widely grown for its edible bean which has numerous uses. Microwave remote sensing has a great potential over the conventional remote sensing with the visible and infrared spectra due to its all-weather day-and-night imaging capabilities. In this investigation, a ground-based polarimetric scatterometer operating at multiple frequencies was used to continuously monitor the crop conditions of a soybean field. Polarimetric backscatter data at L, C, and X-bands were acquired every 10 minutes on the microwave observations at various soybean stages. The polarimetric scatterometer consists of a vector network analyzer, a microwave switch, radio frequency cables, power unit and a personal computer. The polarimetric scatterometer components were installed inside an air-conditioned shelter to maintain constant temperature and humidity during the data acquisition period. The backscattering coefficients were calculated from the measured data at incidence angle $40^{\circ}$ and full polarization (HH, VV, HV, VH) by applying the radar equation. The soybean growth data such as leaf area index (LAI), plant height, fresh and dry weight, vegetation water content and pod weight were measured periodically throughout the growth season. We measured the temporal variations of backscattering coefficients of the soybean crop at L, C, and X-bands during a soybean growth period. In the three bands, VV-polarized backscattering coefficients were higher than HH-polarized backscattering coefficients until mid-June, and thereafter HH-polarized backscattering coefficients were higher than VV-, HV-polarized back scattering coefficients. However, the cross-over stage (HH > VV) was different for each frequency: DOY 200 for L-band and DOY 210 for both C and X-bands. The temporal trend of the backscattering coefficients for all bands agreed with the soybean growth data such as LAI, dry weight and plant height; i.e., increased until about DOY 271 and decreased afterward. We plotted the relationship between the backscattering coefficients with three bands and soybean growth parameters. The growth parameters were highly correlated with HH-polarization at L-band (over r=0.92).

• Corrosion Science and Technology
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• v.13 no.1
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• pp.28-35
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• 2014

Recently, the fuel oil of diesel engines of marine ships has been increasingly changed to heavy oil of low quality as the oil price is getting higher and higher. Therefore, the spiral gear attached at the motor of the oil purifier which plays an important role to purify the heavy oil is also easy to expose at severe environmental condition due to the purification of the heavy oil in higher temperature. Thus, the material of the spiral gear requires a better mechanical strength, wear and corrosion resistance. In this study, the heat treatment(tempering) with various holding time at temperature of $500^{\circ}C$ was carried out to the alloy of Cu-7Al-2.5Si as centrifugal casting, and the properties of both hardness and corrosion resistance with and without heat treatment were investigated with observation of the microstructure and with electrochemical methods, such as measurement of corrosion potential, cathodic and anodic polarization curves, cyclic voltammogram, and a.c. impedance. in natural seawater solution. The ${\alpha}$, ${\beta}^{\prime}$ and ${\gamma}_2$ phases were observed in the material in spite of no heat treatment due to quenching effect of a spin mold. However, their phases, that is, ${\beta}^{\prime}$ and ${\gamma}_2$ phases decreased gradually with increasing the holding time at a constant temperature of $500^{\circ}C$. The hardness more or less decreased with heat treatment, however its corrosion resistance was improved with the heat treatment. Furthermore, the longer holding time, the better corrosion resistance. In addition, when the holding time was 48hrs, its corrosion current density showed the lowest value. The pattern of corroded surface was nearly similar to that of the pitting corrosion, and this morphology was greatly observed in the case of no heat treatment. It is considered that ${\gamma}_2$ phase at the grain boundary was corroded preferentially as an anode. However, the pattern of general corrosion exhibited increasingly due to decreasing the ${\gamma}_2$ phase with heat treatment. Consequently, it is suggested that the corrosion resistance of Cu-7Al-2.5Si alloy can be improved with the heat treatment as a holding time for 48 hrs at $500^{\circ}C$.

• Composites Research
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• v.29 no.4
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• pp.145-150
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• 2016

Polyvinylidene fluoride (PVDF) as a representative polymer with the piezoelectric property has been studied since the 1960s. Crystalline structure of poly(vinylidene fluoride) polymer is composed of five different crystal structure of the polymer as a semi-crystalline. Among the various crystal structures, ${\beta}-type$ crystal exhibits a piezoelectricity because the permanent dipoles are aligned in one direction. Generally ${\beta}-form$ crystal structure can be obtained through the transformation of the ${\alpha}-form$ crystal structure by the stretching and it can increase the amount through the after treatment as poling process after stretching. ${\beta}-form$ crystal structure the PVDF fibers produced by wet spinning is formed through a diffusion mechanism of a polar solvent in the coagulation bath. However, it has a disadvantage that the diffusion path of the solvent remains as pores in the fiber because the fiber solidification occurs simultaneously with the diffusion of the polar solvent. These pores play a role in reducing effect of poling process owing to effect of disturbances acting on the polarization by the electric field. In this work, the drying method using the microwave was introduced to remove more effectively the residual solvent and the pore within PVDF fibers produced through wet-spinning process and piezoelectric PVDF fibers was produced by transformation of the remaining ${\alpha}$ form crystal structure into ${\beta}-crystal$ structure through the stretching process.