• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1119-1122
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• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.91-96
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• 2020

The 33-mode dielectric and piezoelectric properties of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 piezoelectric single crystals were measured under large electric field and compressive stress. The phase transition from the low temperature rhombohedral to the high temperature tetragonal structure was observed in the range of 110~140℃, and the Curie temperature changing to the cubic structure was about 165℃. The polarization change according to the compressive stress and electric field was measured. Relative dielectric constant was calculated from the slope of the polarization curve applied to the electric field, and the calculated relative dielectric constant increased as the applied stress increased, and the relative dielectric constant decreased as the applied electric field increased. The strain according to the compressive stress and electric field change was measured, the piezoelectric constant was calculated from the slope of the curve, and the phase transition according to the application of pressure was confirmed. In the case of practical application as an underwater or medical ultrasonic actuator, it is necessary to properly design the magnitude of the compressive stress applied to the device and the DC bias in order to maintain linear driving.

• Current Optics and Photonics
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• v.5 no.1
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• pp.66-71
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• 2021

The resonance characteristics of H-shaped metamaterials, whose widths were varied while keeping the height constant, were investigated in the terahertz (THz) frequency range. The H-shaped metamaterials were numerically analyzed in two modes in which the polarization of the incident THz electric field was either parallel or perpendicular to the width of the H-shaped structure. The resonant frequency of the metamaterial changed stably in each mode, even if only the width of the H shape was changed. The resonant frequency of the metamaterial operating in the two modes increases without significant difference regardless of the polarization of the incident electromagnetic wave as the width of the H-shaped metamaterial increases. The electric field distribution and the surface current density induced in the metamaterial in the two modes were numerically analyzed by varying the structure ratio of the metamaterial. The numerical analysis clearly revealed the cause of the change in the resonance characteristics as the width of the H-shaped metamaterial changed. The efficacy of the numerical analysis was verified experimentally using the THz-TDS (time-domain spectroscopy) system. The experimental results are consistent with the simulations, clearly demonstrating the meaningfulness of the numerical analysis of the metamaterial. The analyzed resonance properties of the H-shaped metamaterial in the THz frequency range can be applied for designing THz-tunable metamaterials and improving the sensitivity of THz sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.556-560
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• 2002

The rheological characteristics of PNN-PZT ceramics with high electromechanical coupling factor and electricstrictive constant was investigated. Green sheets of piezoelectric PNN-PZT ceramics were made by tape-casting method with controlling the mixing ratio of a dispersant, an organic binder, and a plasticizer. When the dispersant content was 1 wt.%, the slurry showed the best rheological characteristics for tape casting. The amounts of the plasticizer and the binder was simultaneously varied in the ranges of 1.5~18 and 3~9 wt.%, respectively. When both the plasticizer and binder of 6 wt.% mixed in the solution, respectiveley, the highest green density of the sheet was obtained without macrodefects. Multilyered structures of PNN-PZT/Ag-Pd were successfully fabricated using the optimized tape casting condition. The polarization behavior of these actuators seemed to similar to typical electricstrictive polarization behavior. The multilayer ceramic actuator is about $0.6{\times}10^{-3}$ of strain.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.151-157
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• 1995

Frequency-dependent electrical properties of $C_{22}$-Quinolinium(TCNQ) LB films were investigated in a frequency range of 10[Hz]-13[MHz] along a perpendicular direction. The films were heat-treated to understand an electrodynamic response in a temperature range of 20-240[.deg. C]. Frequencydependent dielectric constants show that there are two characteristic dispersions; one is a dispersion occuring near 1[MHz] coming from the orientational polarization of the molecules and the other one is an interfacial polarization effect below 1[kHz] or so when the annealing temperature is above 80 [.deg. C]. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains. Several other methods were employed to identify the internal structure change of the films. DSC(differential scanning calorimetry) data of the $C_{22}$-Quinolinium(TCNQ) molecules shows that there is an endothermic process near 110[.deg. C] and a weak exothermic process near 180[.deg. C]. While the endothermic process is related to a disordering of the alkyl chains, the exothermic process seems to be due to a chemical structure change of the TCNQ molecules. Thickness measurement by ellipsometry shows that there is a thickness drop near 100[.deg. C], and the thickness above 120[.deg. C] becomes around 20[%] of the room-temperature value.lue.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.592-597
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• 2000

In this study (B $a_{0.5}$/S $r_{0.5}$)Ti $O_3$[BST(50/50)] ceramic thin films were prepared by the Sol-Gel method BST(50/50) stock solution was made and spin-coated on the Indium Tin Oxide(ITO)/glass substrate at 4000 rpm for 30 seconds. The coated films were dried at 35$0^{\circ}C$ for 10 minutes and annealed at 650~75$0^{\circ}C$ for 1 hour. The microstructural properties of the BST(50/50) thin film were studied by the XRD and AFM. The ferroelectric perovskite phase was formed at the annealing condition of 75$0^{\circ}C$ for 1 hour. Dielectric constant and loss of this thin were 370, 3.7% at room temperature respectively. The polarization switching voltage showed the good value of 3V. The leakage current density of the BST(50/50) thin film was 10$^{-7A}$c $m^2$with applied voltage of 1.5V. BST(50/50) thin film capacitors having good dielectric and electrical properties are expecting for the application to the dielectric material of DRAM.RAM.M.