• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2004.11a
• /
• pp.163-163
• /
• 2004

• Proceedings of the Optical Society of Korea Conference
• /
• 2008.07a
• /
• pp.135-136
• /
• 2008

• Electronics and Telecommunications Trends
• /
• v.24 no.6
• /
• pp.99-109
• /
• 2009

현재 주목을 받고 있는 테라헤르츠 대역의 주파수를 이용한 무선통신시스템 응용기술 동향에 대하여 기술한다. 테라헤르츠 대역은 전자파 스펙트럼에서 밀리미터파 대역과 원적외선 대역의 중간에 위치하는 100GHz~10THz 사이의 주파수이다. 현재 시점에서 10년 이내에 약 15Gbps의 데이터 속도가 필요할 것으로 판단되며, 10Gbps 이상의 전송속도를 실현하기 위해서는 기존의 밀리미터파에서 사용하는 주파수 대역폭 보다 더 넓은 대역폭이 필요하며, 이 대역폭을 얻기 위해서는 테라헤르츠 주파수 대역으로 자연적으로 옮겨가지 않을 수 없다. 본 고에서는 테라헤르츠 대역의 전파 특성, 가용 주파수 대역과 무선통신시스템 응용을 위한 옥내 채널 모델, 테라헤르츠 무선통신시스템 연구동향, RF 송수신기 핵심부품 및 MMIC 기술개발 동향을 소개하고자 한다.

• ETRI Journal
• /
• v.35 no.3
• /
• pp.386-396
• /
• 2013

A 10-Gbit/s wireless communication system operating at a carrier frequency of 300 GHz is presented. The modulation scheme is amplitude shift keying in incoherent mode with a high intermediate frequency (IF) of 30 GHz and a bandwidth of 20 GHz for transmitting a 10-Gbit/s baseband (BB) data signal. A single sideband transmission is implemented using a waveguide-tapered 270-GHz high-pass filter with a lower sideband rejection of around 60 dB. This paper presents an all-electronic design of a terahertz communication system, including the major modules of the BB and IF band as well as the RF modules. The wireless link shows that, aided by a clock and data recovery circuit, it can receive $2^7$-1 pseudorandom binary sequence data without error at up to 10 Gbit/s for over 1.2 m using collimating lenses, where the transmitted power is 10 ${\mu}W$.

• Electronics and Telecommunications Trends
• /
• v.33 no.3
• /
• pp.59-69
• /
• 2018

Terahertz (THz) imaging and spectroscopy have been developed as non-destructive testing methods for various industrial applications. However, they have not been widely adopted in real applications owing to a high system price and the large size of conventional THz time-domain spectroscopy systems, which are based on ultrashort optical pulse lasers. Recently, various types of compact THz emitters and detectors have become available. As a result, THz non-destructive test (NDT) systems have become viable solutions. Herein, we briefly review the recent advances in THz NDT techniques adopting continuous-wave THz systems, including our recent results of a THz-based waterproof test system and an electrical connection inspection system for car manufacturing.

• Korean Journal of Optics and Photonics
• /
• v.12 no.1
• /
• pp.1-4
• /
• 2001

Via terahertz (THz) reflection radar, the characterizations of reflected THz electromagnetic pulses are reported. Quasi-optical techniques are used to efficiently reflect pulses of THz electromagnetic radiation from an aluminum mirror and several conducting and nonconducting materials. An incident THz pulse is reflected up to 9 times to know the magnitude change of a reflected pulse from the aluminum mirror. Using this method, aluminum board, undoped silicon, quartz, and LDPE samples' reflection coefficient and index of refraction can be measured. These results suggest a possible application of transient THz reflection spectroscopy without surface contact.ontact.

• Current Optics and Photonics
• /
• v.1 no.6
• /
• pp.567-572
• /
• 2017

A novel slotted-core hexagonal photonic crystal fiber (PCF) for terahertz (THz) wave guiding is proposed in this paper. A trade-off managed between effective material loss (EML) and birefringence for efficient guidance of THz waves is illustrated in this article. The rectangular slot shaped air-holes break the symmetry of the porous-core which offers ultra-high birefringence of $8.8{\times}10^{-2}$. The proposed structure offers low bending loss of $1.07{\times}10^{-34}cm^{-1}$ and extremely low effective material loss (EML) of $0.035cm^{-1}$ at an operating frequency of 1.0 THz. In addition other guiding properties such as power fraction, dispersion and confinement loss are also discussed. The proposed THz waveguide can be effectively used for convenient transmission of THz waves.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2001.05a
• /
• pp.479-482
• /
• 2001

We have measured terahertz electromagnetic pulses when DC voltage from V up to 90V is applied to the transmitter chip excited by femto-second laser pulse. The femto-second excitation laser pulse was injected to transmitter chip. Finally, we are observed the amplitude of electromagnetic pulse and variation of spectrum. Consequently, the amplitude of spectrum was increased to high frequency according to increase of voltage. At that time, the signal-to-noise rate(SNR) is increased from 250:1 to 10, 000:1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.202-206
• /
• 2001

Using THz time-domain spectroscopy (THz-TDS), the power absorption, the index of refraction, and the real conductivity of silica sand are measured from 0.1[Thz] to 0.5[Thz] frequency range. It is impossible to measure the characterization of the silica sand by simple electrical measurements using mechanical contacts, e.g., Hall effect or four-point probe measurements. However, the THz-TDS technique can measure not only electrical but also optical characterization of he sample. Also this technique can measure frequency dependent results. Especially, the real conductivity was increased according to THz frequency. This is unusual material compare with metal and semiconductor materials; the measured real conductivity are not followed by the simple Drude theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.78-79
• /
• 2005

We report on optically excited terahertz (THz) omission from low-temperature (LT) grown GaAs. We have used 70 fs titanium-sapphire laser pulses with wavelengths at 800 nm to generate THz radiation pulses. The LT-GaAs layers are grown on semi-insulating GaAs substrates with GaAs buffer layer by molecular beam epitaxy (MBE). The THz emission from the LT-GaAs surface is strong and does not show any significant variation in the strength of the THz emission over several different angles between the polarization of the excitation laser pulse and the crystallographic orientation of the LT-GaAs.