• Title/Summary/Keyword: template assisted

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Clinical problems of computer-guided implant surgery

  • Moon, Seong-Yong;Lee, Kyoung-Rok;Kim, Su-Gwan;Son, Mee-Kyoung
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.38
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    • pp.15.1-15.6
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    • 2016
  • Background: The utilization of a cone-beam computed tomography (CT)-assisted surgical template allows for predictable results because implant placement plans can be performed in the actual surgery. In order to assess the accuracy of the CT-guided surgery, angular errors and shoulder/apex distance errors were evaluated by data fusion from before and after the placement. Methods: Computer-guided implant surgery was performed in five patients with 19 implants. In order to analyze differences of the implant fixture body between preoperative planned implant and postoperative placed implant, angular error and distance errors were evaluated. Results: The mean angular errors between the preoperative planned and postoperative placed implant was $3.84^{\circ}{\pm}1.49^{\circ}$; the mean distance errors between the planned and placed implants were $0.45{\pm}0.48mm$ horizontally and $0.63{\pm}0.51mm$ vertically at the implant neck and $0.70{\pm}0.63mm$ horizontally and $0.64{\pm}0.57mm$ vertically at the implant apex for all 19 implants. Conclusions: It is important to be able to utilize these methods in actual clinical settings by improving the various problems, including the considerations of patient mouth opening limitations, surgical guide preparation, and fixation.

In-vitro study on the accuracy of a simple-design CT-guided stent for dental implants

  • Huh, Young-June;Choi, Bo-Ram;Huh, Kyung-Hoe;Yi, Won-Jin;Heo, Min-Suk;Lee, Sam-Sun;Choi, Soon-Chul
    • Imaging Science in Dentistry
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    • v.42 no.3
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    • pp.139-146
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    • 2012
  • Purpose: An individual surgical stent fabricated from computed tomography (CT) data, called a CT-guided stent, would be useful for accurate installation of implants. The purpose of the present study was to introduce a newly developed CT-guided stent with a simple design and evaluate the accuracy of the stent placement. Materials and Methods: A resin template was fabricated from a hog mandible and a specially designed plastic plate, with 4 metal balls inserted in it for radiographic recognition, was attached to the occlusal surface of the template. With the surgical stent applied, CT images were taken, and virtual implants were placed using software. The spatial positions of the virtually positioned implants were acquired and implant guiding holes were drilled into the surgical stent using a specially designed 5-axis drilling machine. The surgical stent was placed on the mandible and CT images were taken again. The discrepancy between the central axis of the drilled holes on the second CT images and the virtually installed implants on the first CT images was evaluated. Results: The deviation of the entry point and angulation of the central axis in the reference plane were $0.47{\pm}0.27$ mm, $0.57{\pm}0.23$ mm, and $0.64{\pm}0.16^{\circ}$, $0.57{\pm}0.15^{\circ}$, respectively. However, for the two different angulations in each group, the $20^{\circ}$ angulation showed a greater error in the deviation of the entry point than did the $10^{\circ}$ angulation. Conclusion: The CT-guided template proposed in this study was highly accurate. It could replace existing implant guide systems to reduce costs and effort.

Oxidation Process of GaN Schottky Diode for High-Voltage Applications (고전압 응용분야를 위한 GaN 쇼트키 다이오드의 산화 공정)

  • Ha, Min-Woo;Han, Min-Koo;Hahn, Cheol-Koo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2265-2269
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    • 2011
  • 1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

2-Dimensional inverse opal structured VO2 thin film for selective reflectance adjustment

  • Lee, Yulhee;Yu, Jung-Hoon;Nam, Sang-Hun;Seo, Hyeon Jin;Hwang, Ki-Hwan;Kim, Minha;Lee, Jaehyeong;Boo, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.410.1-410.1
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    • 2016
  • Vanadium dioxide ($VO_2$) is a well-known material that exhibits a metal-semiconductor transition at 340 K, with drastic change of transmittance at NIR region. However, $VO_2$ based thermochromics accompany with low visible transmittance value and unfavorable color (brownish yellow). Herein, we demonstrate the adjustment of visible transmittance of $VO_2$ thin film by nanosphere template assisted patterning process using sol-gel method. 2-Dimenstional honeycomb shape was varied as function of diameter of nanosphere and coating conditions. The morphological geometry of the films was investigated by FE-SEM and AFM. Result shows that inversed shape of nanosphere was formed clearly and pattern width was altered according to the bead size. This structure creates the geometrical blank area from the position of nanosphere which improves the optical transmittance at the visible region. Moreover, such patterned $VO_2$ thin film not only maintains the optical switching efficiency, but also generate the gorgeous scattering effect which presumably support the glazing application.

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Technologies for the Removal of Water Hardness and Scaling Prevention

  • Ahn, Min Kyung;Han, Choon
    • Journal of Energy Engineering
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    • v.26 no.2
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    • pp.73-79
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    • 2017
  • In nucleation assisted crystallization process formed $CO_2$ leaves as colloid gas and is used as the template by the rapidly growing crystals in the nucleation site. This emulsion of $CaCO_3$ micro-crystals & $CO_2$ micro-bubbles forms hollow particles. Formed hollow particles are double walled, both internal and external faces belonging to the cleavage aragonites which separate the surrounding water from the enclosed gas cavity. Hence, the reverse reaction of $CO_2$ with water forming Carbonic Acid is not possible and the pH stability is maintained. In fact every excess $CaCO_3$ crystals are buffering any carbonic acid left over. This $CO_2$ based nucleation technology prevents scale formation in water channels, but it also helps to reduce the previously formed scales. This process takes out water dissolved $CO_2$ in almost-visible micro-bubbles forms that helps reducing previously formed scale over a period of time (depends on the usage period). The aragonite crystals can't form scale because of its stable molecular structure and neutral surface electro potentiality.

Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

  • Woo, Hyeonseok;Kim, Jongmin;Cho, Sangeun;Jo, Yongcheol;Roh, Cheong Hyun;Kim, Hyungsang;Hahn, Cheol-Koo;Im, Hyunsik
    • Applied Science and Convergence Technology
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    • v.26 no.3
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    • pp.52-54
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    • 2017
  • An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

Progress in research and development for REBCO coated conductors by reactive co-evaporation

  • Oh, S.S.;Kim, H.S.;Ha, H.S.;Ko, R.K.;Ha, D.W.;Lee, H.;Moon, S.H.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.1-5
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    • 2013
  • This paper reviews recent progress in research and development (R&D) of reactive co-evaporation for high performance REBCO coated conductors in Korea. Two types of reactive co-evaporation methods were developed for the deposition of SmBCO and GdBCO superconducting layers respectively on the IBAD (Ion Beam Assisted Deposition)-MgO template in the Korean coated conductor project. Batch type reactive co-evaporation equipment and its processing were developed for SmBCO coated conductors at Korea Electrotechnology Research Institute (KERI) in conjunction with the Korea Advanced Institute of Science and Technology (KAIST), and a very high critical current exceeding 1,000 A/cm at 77 K in the self field was achieved through the optimization of deposition parameters. Reel-to-reel type reactive co-evaporation processing with a high conversion rate was also developed, while long length GdBCO coated conductors have been routinely produced by SuNAM Co. The minimum critical current of 422 A/cm-w at 77 K in self field was confirmed for 1 km-long GdBCO tape.

Deposition of YBCO Thin Film by Aerosol Assisted Spray Pyrolysis Method using Nitrate Precursors (질산염 전구체 원료로 분무 열분해 방법에 의한 YBCO 박막 증착)

  • Kim, Byeong-Joo;Hong, Seok-Kwan;Kim, Jae-Geun;Lee, Jong-Beom;Lee, Hee-Gyoun;Hong, Gye-Won
    • Progress in Superconductivity
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    • v.12 no.1
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    • pp.68-73
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    • 2010
  • Y123 films have been deposited on $LaAlO_3$ (100) single-crystal and IBAD substrates by spray pyrolysis method using nitrate precursors. Ultrasonic atomization was adopted to decrease the droplet size, spraying angle and its moving velocity toward substrate for introducing the preheating tube furnace in appropriate location. A small preheating tube furnace was installed between spraying nozzle and substrate for fast drying and enhanced decomposition of precursors. C-axis oriented films were obtained on both LAO and IBAD substrates at deposition temperature of around $710{\sim}750^{\circ}C$ and working pressures of 10~15 torr. Thick c-axis epitaxial film with the thickness of $0.3{\sim}0.6\;{\mu}m$ was obtained on LAO single-crystal by 10 min deposition. But the XRD results of the film deposited on IBAD template at same deposition condition showed that the buffer layers of the IBAD metal substrate was affected by long residence of metal substrate at high temperature for YBCO deposition.

Direct Synthesis of Width-tailored Graphene Nanoribbon on Insulating Substrate

  • Song, U-Seok;Kim, Su-Yeon;Kim, Yu-Seok;Kim, Seong-Hwan;Lee, Su-Il;Jeon, Cheol-Ho;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.564-564
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    • 2012
  • Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.

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Template-Assisted Electrochemical Growth of Hydrous Ruthenium Oxide Nanotubes

  • Cho, Sanghyun;Liu, Lichun;Yoo, Sang-Hoon;Jang, Ho-Young;Park, Sungho
    • Bulletin of the Korean Chemical Society
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    • v.34 no.5
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    • pp.1462-1466
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    • 2013
  • We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.