• Title/Summary/Keyword: temperature-dependence

Search Result 2,092, Processing Time 1.313 seconds

Thermal and Optical Properties of Cellobiose Octa(cholesteryloxycarbonyl)alkanoates (셀로비오스 옥타(콜레스테릴옥시카보닐)알카노에이트의 열 및 광학 특성)

  • Jeong, Seung-Yong;Ma, Yung-Dae
    • Polymer(Korea)
    • /
    • v.32 no.3
    • /
    • pp.230-238
    • /
    • 2008
  • The thermal and optical properties of cellobiose octa(cholestryloxycarbonyl)alkanoates CCCBn, $n=2{\sim}8$,10, the number of methylene units in the spacer) were investigated. All the samples formed monotropic cholesteric phases with left-handed helical structures. CCBn with n=2 or 10, in contrast with CCBn with $3{\leq}n{\leq}8$, did not display reflection colors over the full cholesteric range, suggesting that the helical twisting power of the cholesteryl group highly depends on the length of the spacer connecting the cholesteryl group to the cellobiose chain. The isotropic-cholestropic transition ($T_{ic}$) and glass transition temperatures decreased with increasing n and showed no odd-even effect. The transition entropy at $T_{ic}$ increased with increasing n from 2 up 6, but at n=7 it drops significantly and then increased again with increasing n from 8 to 10. The sharp change at n=7 may be attributed to a difference in arrangement of the side groups. The thermal stability and degree of order in the mesophase and the temperature dependence of the optical pitch observed for CCBn were significantly different from those reported for the cellulose tri(cholesteryloxycarbonyl)alkanoates and glucose penta(cholesteryloxycarbonyl)alkanoates. The results were discussed in terms of the differences in the degree of polymerization, the number of the mesogenic units per mole-glucose unit, and the conformation of the molecules.

The Effect of Thermal Annealing and Growth of $CuGaSe_2$ Single Crystal Thin Film for Solar Cell Application (태양전지용 $CuGaSe_2$ 단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Journal of the Korean Solar Energy Society
    • /
    • v.23 no.2
    • /
    • pp.59-70
    • /
    • 2003
  • A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

Exchange coupling of Co/NiMn bilayer (Co/NiMn의 교환 자기결합에 관한 연구)

  • 안동환;조권구;주승기
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.4
    • /
    • pp.171-177
    • /
    • 2000
  • Exchange coupling of Co/NiMn bilayers fabricated by RF magnetron sputtering method was studied. We investigated the variation of exchange coupling field (H$\sub$ex/) for different annealing temperature and time. The maximum exchange coupling field was obtained after 13hr annealing at 300 $^{\circ}C$. With respect to deposition sequence, it was demonstrated that NiMn-top bilayers had higher exchange coupling field than NiMn-bottom bilayers. Ta capping layer was shown to be essential in achieving exchange coupling and Auger Electron Spectroscopy (AES) proved that uncapped NiMn/Co bilayers did not have exchange coupling because of oxygen incorporation into film. We also observed the effect of Ta underlayer on exchange coupling. It was found that Ta underlayer had better not be used for attaining higher exchange coupling. XRD analysis showed that Ta underlayer helped bilayers develop texture, but it was not essential to exchange coupling of Co/NiMn bilayers, which is in contrast to NiFe/NiMn system. Furthermore, the NiMn and Co thickness dependence of exchange coupling has been investigated. The exchange coupling strength reached the maximum above 200 ${\AA}$ NiMn thickness and had inversely proportional relation with Co thickness.

  • PDF

Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaAl2Se4 단결정 박막 성장과 광전도 특성)

  • Jeong, Junwoo;Lee, Kijung;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
    • /
    • v.24 no.6
    • /
    • pp.404-411
    • /
    • 2015
  • A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

A Study on the Commercialization of Polyamide 66/Polypropylene Blend (폴리아마이드 66/폴리프로필렌 블렌드의 상업화 연구)

  • Kim, Seog-Jun;Nam, Byeong-Uk
    • Elastomers and Composites
    • /
    • v.38 no.3
    • /
    • pp.262-272
    • /
    • 2003
  • Maleic anhydride-grafted-polypropylene(PP-g-MA) were used as a blend component and a compatibilizer, respectively, for two reactive blends of polyamide 66(PA 66)PP-g-MA binary blends and PA 66/polypropylene(PP)/PP-g-MA ternary blends. The goal of this work was to investigate the property differences between binary and ternary blends. Tensile strength, flexural modulus, heat deflection temperature, impact strength, melt flow index, and the dependence of melt viscosity on the shear rate were examined. The impact strengths of binary blends were higher than those of ternary blends at all compositions, since the in situ synthesis of PP-g-PA 66 copolymer through the imide formation between the amine end group of PA 66 and the anhydride group of PP-g-MA gave the increase of molecular weight and was more popular in binary blends than in ternary blends. In case of ternary blends, most of the properties were superior to those of binary blends, owing to the better properties of PP compared with PP-g-MA. The toughened binary blends with 70/30(PA 66/PP-g-MA) and 80/20 ratios were not commercially applicable due to their poor processibility. So, the ternary blends which showed lower melt viscosities were recommended for the commercial applications.

Thermal and Optical Properties of Poly{1-(Cholesteryloxycarbonylalkanoyloxy)ethylene}s (폴리{1-(콜레스테릴옥시카보닐알카노일옥시)에틸렌}들의 열 및 광학 특성)

  • Jeong, Seung-Yong;Ma, Yung-Dae
    • Polymer(Korea)
    • /
    • v.33 no.2
    • /
    • pp.144-152
    • /
    • 2009
  • The thermal and optical properties of poly {1-(cholesteryloxycarbonylalkanoyloxy) ethylene}s (PCALEn, n=2$\sim$8,10, the number of methylene units in the spacer) were investigated. All of the homologues formed monotropic cholesteric phases with left-handed helical structures. PCALEn with n=2 or 10, in constrast with PCALEn with $3{\leq}n{\leq}8$, did not display reflection colors over the full cholesteric range, suggesting that the helical twisting power of the cholesteryl group highly depends on the length of the spacer connecting the cholesteryl group to the polyethylene chain. The glass transition temperatures decreased with increasing n. The isotropic-cholesteric phase transition temperatures decreased with increasing n up to 7 and showed an odd-even effect. However it became almost constant when n is more than 7. This behavior is rationalized in terms of the change in the average shape of the side chain on varing the parity of the spacer. This rationalization also accounts for the observed variation of the entropy gain for the clearing transition. The thermal stability and degree of order in the mesophase and the temperature dependence of the optical pitch observed for PCALEn were significantly different from those reported for cellulose tri(cholesteryloxycarbonyl)alkanoates. The results were discussed in terms of the differences in the chemical structure and flexibility of main chain and the number of the mesogenic units per repeating unit.

Machine Classification in Ship Engine Rooms Using Transfer Learning (전이 학습을 이용한 선박 기관실 기기의 분류에 관한 연구)

  • Park, Kyung-Min
    • Journal of the Korean Society of Marine Environment & Safety
    • /
    • v.27 no.2
    • /
    • pp.363-368
    • /
    • 2021
  • Ship engine rooms have improved automation systems owing to the advancement of technology. However, there are many variables at sea, such as wind, waves, vibration, and equipment aging, which cause loosening, cutting, and leakage, which are not measured by automated systems. There are cases in which only one engineer is available for patrolling. This entails many risk factors in the engine room, where rotating equipment is operating at high temperature and high pressure. When the engineer patrols, he uses his five senses, with particular high dependence on vision. We hereby present a preliminary study to implement an engine-room patrol robot that detects and informs the machine room while a robot patrols the engine room. Images of ship engine-room equipment were classified using a convolutional neural network (CNN). After constructing the image dataset of the ship engine room, the network was trained with a pre-trained CNN model. Classification performance of the trained model showed high reproducibility. Images were visualized with a class activation map. Although it cannot be generalized because the amount of data was limited, it is thought that if the data of each ship were learned through transfer learning, a model suitable for the characteristics of each ship could be constructed with little time and cost expenditure.

Recent Development of Thermo-chemical Conversion Processes with Fluidized Bed Technologies (유동층 공정을 이용한 열화학적 전환 공정의 최신 개발 동향)

  • Hyun Jun Park;Seung Seok Oh;Olusola Nafiu Olanrewaju;Jester Lih Jie Ling;Chul Seung Jeong;Han Saem Park;See Hoon Lee
    • Korean Chemical Engineering Research
    • /
    • v.61 no.1
    • /
    • pp.8-18
    • /
    • 2023
  • Increasing of energy demand due to the rapid growth of global population and the development of world economy has inevitably resulted in the continuously increase of fossil fuel usage in the world. However, highly dependence on fossil fuels has necessarily brought about critical environmental issues and challenges such as severe air pollutions and rapid global warming. In order to settle these environmental and energy problems, clean energy generations in the conventional combustion processes have widely adapted in the world. In particular, novel thermochemical conversion processes such as pyrolysis and gasification have rapidly been applied for generating clean energy. Fluidized bed technologies having advantages such as various fuel use, easy continuous operation, high heat and material transfer, isothermal operation, and lower operation temperature are widely adopted and used because they are suitable for thermochemical energy conversion. The latest research trends and important findings in the thermo-chemical conversion process with fluidized bed technologies are summarized in this review. Also, the need for research such as layered materials and substances to reduce fine dust (biomass, natural resource waste, etc.) was suggested. Through this, it is intended to increase interest and understanding in fluidized bed technology and to present directions for solving future challenges in fluidized bed process technology development.

The study of growth and characterization of $AgInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)에 의한 $AgInSe_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.2
    • /
    • pp.197-206
    • /
    • 1999
  • The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

  • PDF

Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot wall epitaxy법에 의한 MgGa2Se4 단결정 박막 성장과 광학적 특성)

  • Moon, Jong-Dae;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.21 no.3
    • /
    • pp.99-104
    • /
    • 2011
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.