• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.96.1-96.1
• /
• 2011

Solid oxide fuel cells(SOFCs) can convert the chemical energy of fuel into electricity directly. With the rising fuel prices and stricter emission requirement, SOFCs have been widely recognized as a promising technology in the near future. In this study, lean premixed flame using the orifice swirl burner was analyzed numerically and experimentally. We used the program CHEMKIN and the GRI 3.0 chemical reaction mechanism for the calculation of burning velocity and adiabatic flame temperature to investigate the effects of equivalence ratio on the adiabatic flame temperature and burning velocity respectively. Burning velocity of hydrogen was calculated by CHEMKIN simulation was 325cm/s, which was faster than that of methane having 42 cm/s at the same equivalence ratio. Also Ansys Fluent was used so as to analysis the performance with alteration of swirl structure and orifice mixer structure. This experimental study focused on stability and emission characteristics and the influence of swirl and orifice mixer in Solid Oxide Fuel Cell Systme burner. The results show that the stable blue flame with different equivalence ratio. NOx was measured below 20 ppm from equivalence ratios 0.72 to 0.84 and CO which is a very important emission index in combustor was observed below 160 ppm under the same equivalence region.

• 한국지역지리학회지
• /
• 제10권1호
• /
• pp.151-157
• /
• 2004

1월의 clo 값은 대체로 삼지연 지역이 가장 높게 나타나고, 장전 일대의 동해안 지역이 가장 낮게 나타난다. 또한 해안 지역보다 내륙 지역이, 동해안보다 서해안이 clo 값이 높게 나타난다. 이는 지형적 영향과 기온과 풍속의 지역적 차이에 기인한다. 8월에도 삼지연, 해산 일대, 개마고원 등이 높게 나타나는데, 이는 지형적 영향으로 기온 저하와 풍속의 증가로 나타나는 현상이다. 특히 8월에는 삼지연을 중심으로 북동-남서 내륙지역으로 등치선이 만곡하고, 이 축을 중심으로 한 이외의 지역이 비교적 낮은 분포를 보인다. 이러한 원인으로는 위도, 지형 및 장마 이후의 고온 다습한 북태평양 기단의 영향과 강한 일사에 의한 지면 복사열의 방출에 있다고 사료된다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1001-1004
• /
• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.318-322
• /
• 1997

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.1071-1074
• /
• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국초전도ㆍ저온공학회논문지
• /
• 제17권3호
• /
• pp.57-61
• /
• 2015

A Superconducting Fault Current Limiter is an electric power device which limits the fault current immediately in a power grid. The SFCL must be cooled to below the critical temperature of high temperature superconductor modules. In general, they are submerged in sub-cooled liquid nitrogen for their stable thermal characteristics. To cool and maintain the target temperature and pressure of the sub-cooled liquid nitrogen, the cryogenic cooling system should be designed well with a cryocooler and coolant circulation devices. The pressure of the cryostat for the SFCL should be pressurized to suppress the generation of nitrogen bubbles in quench mode of the SFCL. In this study, we tested the performance of the cooling system for the prototype 154 kV SFCL, which consist of a Stirling cryocooler, a subcooling cryostat, a pressure builder and a main cryostat for the SFCL module, to verify the design of the cooling system and the electric performance of the SFCL. The normal operation condition of the main cryostat is 71 K and 500 kPa. This paper presents tests results of the overall cooling system.

• Nuclear Engineering and Technology
• /
• 제33권5호
• /
• pp.526-538
• /
• 2001

Fatigue tests in air and in room temperature water were performed to obtain comparable data and stable crack measuring conditions. In air environment, fatigue crack growth rate was increased with increasing temperature due to an increase in crack tip oxidation rate. In room temperature water, the fatigue crack growth rate was faster than in air and crack path varied on loading conditions. In simulated light water reactor (LWR) conditions, there was little environmental effect on the fatigue crack growth rate (FCGR) at low dissolved oxygen or at high loading frequency conditions. While the FCGR was enhanced at high oxygen condition, and the enhancement of crack growth rate increased as loading frequency decreased to a critical value. In fractography, environmentally assisted cracks, such as semi-cleavage and secondary intergranular crack, were found near sulfide inclusions only at high dissolved oxygen and low loading frequency condition. The high crack growth rate was related to environmentally assisted crack. These results indicated that environmentally assisted crack could be formed by the Electrochemical effect in specific loading condition.

• 한국마린엔지니어링학회:학술대회논문집
• /
• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
• /
• pp.87-92
• /
• 2005

Experiments at the Japan Microgravity Center(JAMIC) have investigated the interaction between diffusion flames and solid surfaces placed near flames. The fuel for the flames was $C_2H_4$. The surrounding oxygen concentration was 35% with temperatures of $T_a$=300. Especially, the effect of wall temperature on soot deposition from a diffusion flame placed near the wall has been studied by utilizing microgravity environment, which can attain very stable flame along the wall. Cylindrical burner with fuel injection was adopted to obtain two dimensional soot distributions by laser extinction method. In the experiment two different wall temperatures, $T_w$=300,800K, were selected as test conditions. The results showed that the soot distribution between flame and burner wall was strongly affected by the wall temperature and soot deposition increases with decrease in wall temperature. The comparison among the values for two different wall temperatures suggested that the change in thermophoretic effect is the most dominant factor to give the change in soot deposition characteristics.

• Applied Science and Convergence Technology
• /
• 제26권5호
• /
• pp.133-138
• /
• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.278-280
• /
• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.